High performance high-κ/metal gate complementary metal oxide semiconductor circuit element on flexible silicon

Handle URI:
http://hdl.handle.net/10754/600667
Title:
High performance high-κ/metal gate complementary metal oxide semiconductor circuit element on flexible silicon
Authors:
Sevilla, Galo T. ( 0000-0002-9419-4437 ) ; Almuslem, A. S.; Gumus, Abdurrahman; Hussain, Aftab M. ( 0000-0002-9516-9428 ) ; Hussain, Aftab M. ( 0000-0002-9516-9428 ) ; Cruz, Melvin ( 0000-0002-2734-1388 ) ; Hussain, Muhammad Mustafa ( 0000-0003-3279-0441 )
Abstract:
Thinned silicon based complementary metal oxide semiconductor(CMOS)electronics can be physically flexible. To overcome challenges of limited thinning and damaging of devices originated from back grinding process, we show sequential reactive ion etching of silicon with the assistance from soft polymeric materials to efficiently achieve thinned (40 μm) and flexible (1.5 cm bending radius) silicon based functional CMOSinverters with high-κ/metal gate transistors. Notable advances through this study shows large area of silicon thinning with pre-fabricated high performance elements with ultra-large-scale-integration density (using 90 nm node technology) and then dicing of such large and thinned (seemingly fragile) pieces into smaller pieces using excimer laser. The impact of various mechanical bending and bending cycles show undeterred high performance of flexible siliconCMOSinverters. Future work will include transfer of diced silicon chips to destination site, interconnects, and packaging to obtain fully flexible electronic systems in CMOS compatible way.
KAUST Department:
Integrated Nanotechnology Lab; Electrical Engineering Program; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Citation:
High performance high-κ/metal gate complementary metal oxide semiconductor circuit element on flexible silicon 2016, 108 (9):094102 Applied Physics Letters
Publisher:
AIP Publishing
Journal:
Applied Physics Letters
Issue Date:
29-Feb-2016
DOI:
10.1063/1.4943020
Type:
Article
ISSN:
0003-6951; 1077-3118
Sponsors:
The authors acknowledge KAUST OCRF Grant No. CRG-1-2012-HUS-008.
Additional Links:
http://scitation.aip.org/content/aip/journal/apl/108/9/10.1063/1.4943020
Appears in Collections:
Articles; Electrical Engineering Program; Integrated Nanotechnology Lab; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorSevilla, Galo T.en
dc.contributor.authorAlmuslem, A. S.en
dc.contributor.authorGumus, Abdurrahmanen
dc.contributor.authorHussain, Aftab M.en
dc.contributor.authorHussain, Aftab M.en
dc.contributor.authorCruz, Melvinen
dc.contributor.authorHussain, Muhammad Mustafaen
dc.date.accessioned2016-03-06T13:19:17Zen
dc.date.available2016-03-06T13:19:17Zen
dc.date.issued2016-02-29en
dc.identifier.citationHigh performance high-κ/metal gate complementary metal oxide semiconductor circuit element on flexible silicon 2016, 108 (9):094102 Applied Physics Lettersen
dc.identifier.issn0003-6951en
dc.identifier.issn1077-3118en
dc.identifier.doi10.1063/1.4943020en
dc.identifier.urihttp://hdl.handle.net/10754/600667en
dc.description.abstractThinned silicon based complementary metal oxide semiconductor(CMOS)electronics can be physically flexible. To overcome challenges of limited thinning and damaging of devices originated from back grinding process, we show sequential reactive ion etching of silicon with the assistance from soft polymeric materials to efficiently achieve thinned (40 μm) and flexible (1.5 cm bending radius) silicon based functional CMOSinverters with high-κ/metal gate transistors. Notable advances through this study shows large area of silicon thinning with pre-fabricated high performance elements with ultra-large-scale-integration density (using 90 nm node technology) and then dicing of such large and thinned (seemingly fragile) pieces into smaller pieces using excimer laser. The impact of various mechanical bending and bending cycles show undeterred high performance of flexible siliconCMOSinverters. Future work will include transfer of diced silicon chips to destination site, interconnects, and packaging to obtain fully flexible electronic systems in CMOS compatible way.en
dc.description.sponsorshipThe authors acknowledge KAUST OCRF Grant No. CRG-1-2012-HUS-008.en
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urlhttp://scitation.aip.org/content/aip/journal/apl/108/9/10.1063/1.4943020en
dc.rightsArchived with thanks to Applied Physics Lettersen
dc.titleHigh performance high-κ/metal gate complementary metal oxide semiconductor circuit element on flexible siliconen
dc.typeArticleen
dc.contributor.departmentIntegrated Nanotechnology Laben
dc.contributor.departmentElectrical Engineering Programen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.identifier.journalApplied Physics Lettersen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
kaust.authorSevilla, Galo T.en
kaust.authorAlmuslem, A. S.en
kaust.authorGumus, Abdurrahmanen
kaust.authorHussain, Aftab M.en
kaust.authorHussain, Aftab M.en
kaust.authorCruz, Melvinen
kaust.authorHussain, Muhammad Mustafaen
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