Mapping Carrier Dynamics on Material Surfaces in Space and Time using Scanning Ultrafast Electron Microscopy

Handle URI:
http://hdl.handle.net/10754/600464
Title:
Mapping Carrier Dynamics on Material Surfaces in Space and Time using Scanning Ultrafast Electron Microscopy
Authors:
Sun, Jingya; Adhikari, Aniruddha ( 0000-0003-1189-9755 ) ; Shaheen, Basamat; Yang, Haoze; Mohammed, Omar F. ( 0000-0001-8500-1130 )
Abstract:
Selectively capturing the ultrafast dynamics of charge carriers on materials surfaces and at interfaces is crucial to the design of solar cells and optoelectronic devices. Despite extensive research efforts over the past few decades, information and understanding about surface-dynamical processes, including carrier trapping and recombination remains extremely limited. A key challenge is to selectively map such dynamic processes, a capability that is hitherto impractical by time-resolved laser techniques, which are limited by the laser’s relatively large penetration depth and consequently they record mainly bulk information. Such surface dynamics can only be mapped in real space and time by applying four-dimensional (4D) scanning ultrafast electron microscopy (S-UEM), which records snapshots of materials surfaces with nanometer spatial and sub-picosecond temporal resolutions. In this method, the secondary electron (SE) signal emitted from the sample’s surface is extremely sensitive to the surface dynamics and is detected in real time. In several unique applications, we spatially and temporally visualize the SE energy gain and loss, the charge carrier dynamics on the surface of InGaN nanowires and CdSe single crystals and its powder film. We also provide the mechanisms for the observed dynamics, which will be the foundation for future potential applications of S-UEM to a wide range of studies on material surfaces and device interfaces.
KAUST Department:
Solar and Photovoltaic Engineering Research Center (SPERC); Physical Sciences and Engineering (PSE) Division
Citation:
Mapping Carrier Dynamics on Material Surfaces in Space and Time using Scanning Ultrafast Electron Microscopy 2016 The Journal of Physical Chemistry Letters
Publisher:
American Chemical Society (ACS)
Journal:
The Journal of Physical Chemistry Letters
Issue Date:
25-Feb-2016
DOI:
10.1021/acs.jpclett.5b02908
Type:
Article
ISSN:
1948-7185
Sponsors:
The work reported here was supported by the King Abdullah University of Science and Technology.
Additional Links:
http://pubs.acs.org/doi/abs/10.1021/acs.jpclett.5b02908
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division; Solar and Photovoltaic Engineering Research Center (SPERC)

Full metadata record

DC FieldValue Language
dc.contributor.authorSun, Jingyaen
dc.contributor.authorAdhikari, Aniruddhaen
dc.contributor.authorShaheen, Basamaten
dc.contributor.authorYang, Haozeen
dc.contributor.authorMohammed, Omar F.en
dc.date.accessioned2016-03-02T08:53:01Zen
dc.date.available2016-03-02T08:53:01Zen
dc.date.issued2016-02-25en
dc.identifier.citationMapping Carrier Dynamics on Material Surfaces in Space and Time using Scanning Ultrafast Electron Microscopy 2016 The Journal of Physical Chemistry Lettersen
dc.identifier.issn1948-7185en
dc.identifier.doi10.1021/acs.jpclett.5b02908en
dc.identifier.urihttp://hdl.handle.net/10754/600464en
dc.description.abstractSelectively capturing the ultrafast dynamics of charge carriers on materials surfaces and at interfaces is crucial to the design of solar cells and optoelectronic devices. Despite extensive research efforts over the past few decades, information and understanding about surface-dynamical processes, including carrier trapping and recombination remains extremely limited. A key challenge is to selectively map such dynamic processes, a capability that is hitherto impractical by time-resolved laser techniques, which are limited by the laser’s relatively large penetration depth and consequently they record mainly bulk information. Such surface dynamics can only be mapped in real space and time by applying four-dimensional (4D) scanning ultrafast electron microscopy (S-UEM), which records snapshots of materials surfaces with nanometer spatial and sub-picosecond temporal resolutions. In this method, the secondary electron (SE) signal emitted from the sample’s surface is extremely sensitive to the surface dynamics and is detected in real time. In several unique applications, we spatially and temporally visualize the SE energy gain and loss, the charge carrier dynamics on the surface of InGaN nanowires and CdSe single crystals and its powder film. We also provide the mechanisms for the observed dynamics, which will be the foundation for future potential applications of S-UEM to a wide range of studies on material surfaces and device interfaces.en
dc.description.sponsorshipThe work reported here was supported by the King Abdullah University of Science and Technology.en
dc.language.isoenen
dc.publisherAmerican Chemical Society (ACS)en
dc.relation.urlhttp://pubs.acs.org/doi/abs/10.1021/acs.jpclett.5b02908en
dc.rightsThis document is the Accepted Manuscript version of a Published Work that appeared in final form in The Journal of Physical Chemistry Letters, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see http://pubs.acs.org/doi/abs/10.1021/acs.jpclett.5b02908.en
dc.titleMapping Carrier Dynamics on Material Surfaces in Space and Time using Scanning Ultrafast Electron Microscopyen
dc.typeArticleen
dc.contributor.departmentSolar and Photovoltaic Engineering Research Center (SPERC)en
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalThe Journal of Physical Chemistry Lettersen
dc.eprint.versionPost-printen
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
kaust.authorSun, Jingyaen
kaust.authorAdhikari, Aniruddhaen
kaust.authorShaheen, Basamaten
kaust.authorYang, Haozeen
kaust.authorMohammed, Omar F.en
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