Recent Developments in p-Type Oxide Semiconductor Materials and Devices

Handle URI:
http://hdl.handle.net/10754/600277
Title:
Recent Developments in p-Type Oxide Semiconductor Materials and Devices
Authors:
Wang, Zhenwei; Nayak, Pradipta K.; Caraveo-Frescas, Jesus Alfonso; Alshareef, Husam N. ( 0000-0001-5029-2142 )
Abstract:
The development of transparent p-type oxide semiconductors with good performance may be a true enabler for a variety of applications where transparency, power efficiency, and greater circuit complexity are needed. Such applications include transparent electronics, displays, sensors, photovoltaics, memristors, and electrochromics. Hence, here, recent developments in materials and devices based on p-type oxide semiconductors are reviewed, including ternary Cu-bearing oxides, binary copper oxides, tin monoxide, spinel oxides, and nickel oxides. The crystal and electronic structures of these materials are discussed, along with approaches to enhance valence-band dispersion to reduce effective mass and increase mobility. Strategies to reduce interfacial defects, off-state current, and material instability are suggested. Furthermore, it is shown that promising progress has been made in the performance of various types of devices based on p-type oxides. Several innovative approaches exist to fabricate transparent complementary metal oxide semiconductor (CMOS) devices, including novel device fabrication schemes and utilization of surface chemistry effects, resulting in good inverter gains. However, despite recent developments, p-type oxides still lag in performance behind their n-type counterparts, which have entered volume production in the display market. Recent successes along with the hurdles that stand in the way of commercial success of p-type oxide semiconductors are presented.
KAUST Department:
Materials Science and Engineering Program
Citation:
Recent Developments in p-Type Oxide Semiconductor Materials and Devices 2016:n/a Advanced Materials
Publisher:
Wiley-Blackwell
Journal:
Advanced Materials
Issue Date:
16-Feb-2016
DOI:
10.1002/adma.201503080
Type:
Article
ISSN:
09359648
Sponsors:
Research reported in this publication was supported by King Abdullah University of Science and Technology (KAUST). Authors also thank Dr. Mrinal K. Hota, Ms. Fwzah Alshammari, core laboratory staff, imaging and characterization staff of KAUST.
Additional Links:
http://doi.wiley.com/10.1002/adma.201503080
Appears in Collections:
Articles; Materials Science and Engineering Program

Full metadata record

DC FieldValue Language
dc.contributor.authorWang, Zhenweien
dc.contributor.authorNayak, Pradipta K.en
dc.contributor.authorCaraveo-Frescas, Jesus Alfonsoen
dc.contributor.authorAlshareef, Husam N.en
dc.date.accessioned2016-02-28T09:46:48Zen
dc.date.available2016-02-28T09:46:48Zen
dc.date.issued2016-02-16en
dc.identifier.citationRecent Developments in p-Type Oxide Semiconductor Materials and Devices 2016:n/a Advanced Materialsen
dc.identifier.issn09359648en
dc.identifier.doi10.1002/adma.201503080en
dc.identifier.urihttp://hdl.handle.net/10754/600277en
dc.description.abstractThe development of transparent p-type oxide semiconductors with good performance may be a true enabler for a variety of applications where transparency, power efficiency, and greater circuit complexity are needed. Such applications include transparent electronics, displays, sensors, photovoltaics, memristors, and electrochromics. Hence, here, recent developments in materials and devices based on p-type oxide semiconductors are reviewed, including ternary Cu-bearing oxides, binary copper oxides, tin monoxide, spinel oxides, and nickel oxides. The crystal and electronic structures of these materials are discussed, along with approaches to enhance valence-band dispersion to reduce effective mass and increase mobility. Strategies to reduce interfacial defects, off-state current, and material instability are suggested. Furthermore, it is shown that promising progress has been made in the performance of various types of devices based on p-type oxides. Several innovative approaches exist to fabricate transparent complementary metal oxide semiconductor (CMOS) devices, including novel device fabrication schemes and utilization of surface chemistry effects, resulting in good inverter gains. However, despite recent developments, p-type oxides still lag in performance behind their n-type counterparts, which have entered volume production in the display market. Recent successes along with the hurdles that stand in the way of commercial success of p-type oxide semiconductors are presented.en
dc.description.sponsorshipResearch reported in this publication was supported by King Abdullah University of Science and Technology (KAUST). Authors also thank Dr. Mrinal K. Hota, Ms. Fwzah Alshammari, core laboratory staff, imaging and characterization staff of KAUST.en
dc.language.isoenen
dc.publisherWiley-Blackwellen
dc.relation.urlhttp://doi.wiley.com/10.1002/adma.201503080en
dc.rightsThis is the peer reviewed version of the following article: Wang, Z., Nayak, P. K., Caraveo-Frescas, J. A. and Alshareef, H. N. (2016), Recent Developments in p-Type Oxide Semiconductor Materials and Devices. Adv. Mater.., which has been published in final form at http://doi.wiley.com/10.1002/adma.201503080. This article may be used for non-commercial purposes in accordance With Wiley Terms and Conditions for self-archiving.en
dc.titleRecent Developments in p-Type Oxide Semiconductor Materials and Devicesen
dc.typeArticleen
dc.contributor.departmentMaterials Science and Engineering Programen
dc.identifier.journalAdvanced Materialsen
dc.eprint.versionPost-printen
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
kaust.authorWang, Zhenweien
kaust.authorNayak, Pradipta K.en
kaust.authorCaraveo-Frescas, Jesus Alfonsoen
kaust.authorAlshareef, Husam N.en
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