Wafer-Scale High-Throughput Ordered Growth of Vertically Aligned ZnO Nanowire Arrays

Handle URI:
http://hdl.handle.net/10754/600180
Title:
Wafer-Scale High-Throughput Ordered Growth of Vertically Aligned ZnO Nanowire Arrays
Authors:
Wei, Yaguang; Wu, Wenzhuo; Guo, Rui; Yuan, Dajun; Das, Suman; Wang, Zhong Lin
Abstract:
This article presents an effective approach for patterned growth of vertically aligned ZnO nanowire (NW) arrays with high throughput and low cost at wafer scale without using cleanroom technology. Periodic hole patterns are generated using laser interference lithography on substrates coated with the photoresist SU-8. ZnO NWs are selectively grown through the holes via a low-temperature hydrothermal method without using a catalyst and with a superior control over orientation, location/density, and as-synthesized morphology. The development of textured ZnO seed layers for replacing single crystalline GaN and ZnO substrates extends the large-scale fabrication of vertically aligned ZnO NW arrays on substrates of other materials, such as polymers, Si, and glass. This combined approach demonstrates a novel method of manufacturing large-scale patterned one-dimensional nanostructures on various substrates for applications in energy harvesting, sensing, optoelectronics, and electronic devices. © 2010 American Chemical Society.
Citation:
Wei Y, Wu W, Guo R, Yuan D, Das S, et al. (2010) Wafer-Scale High-Throughput Ordered Growth of Vertically Aligned ZnO Nanowire Arrays. Nano Lett 10: 3414–3419. Available: http://dx.doi.org/10.1021/nl1014298.
Publisher:
American Chemical Society (ACS)
Journal:
Nano Letters
KAUST Grant Number:
DMS0706436; CMMI 0403671
Issue Date:
8-Sep-2010
DOI:
10.1021/nl1014298
PubMed ID:
20681617
Type:
Article
ISSN:
1530-6984; 1530-6992
Sponsors:
Research was supported by DARPA (Army/AMCOM/REDSTONE AR, W31P4Q-08-1-0009), BES DOE (DE-FG02-07ER46394), KAUST Global Research Partnership, NSF (DMS0706436, CMMI 0403671), MANA WPI program from NIMS, Japan, and the Georgia Institute of Technology. The authors thank Dr. Jung-II Hong and Shu Xiang for technical assistance and discussions on XRD measurements.
Appears in Collections:
Publications Acknowledging KAUST Support

Full metadata record

DC FieldValue Language
dc.contributor.authorWei, Yaguangen
dc.contributor.authorWu, Wenzhuoen
dc.contributor.authorGuo, Ruien
dc.contributor.authorYuan, Dajunen
dc.contributor.authorDas, Sumanen
dc.contributor.authorWang, Zhong Linen
dc.date.accessioned2016-02-28T06:44:34Zen
dc.date.available2016-02-28T06:44:34Zen
dc.date.issued2010-09-08en
dc.identifier.citationWei Y, Wu W, Guo R, Yuan D, Das S, et al. (2010) Wafer-Scale High-Throughput Ordered Growth of Vertically Aligned ZnO Nanowire Arrays. Nano Lett 10: 3414–3419. Available: http://dx.doi.org/10.1021/nl1014298.en
dc.identifier.issn1530-6984en
dc.identifier.issn1530-6992en
dc.identifier.pmid20681617en
dc.identifier.doi10.1021/nl1014298en
dc.identifier.urihttp://hdl.handle.net/10754/600180en
dc.description.abstractThis article presents an effective approach for patterned growth of vertically aligned ZnO nanowire (NW) arrays with high throughput and low cost at wafer scale without using cleanroom technology. Periodic hole patterns are generated using laser interference lithography on substrates coated with the photoresist SU-8. ZnO NWs are selectively grown through the holes via a low-temperature hydrothermal method without using a catalyst and with a superior control over orientation, location/density, and as-synthesized morphology. The development of textured ZnO seed layers for replacing single crystalline GaN and ZnO substrates extends the large-scale fabrication of vertically aligned ZnO NW arrays on substrates of other materials, such as polymers, Si, and glass. This combined approach demonstrates a novel method of manufacturing large-scale patterned one-dimensional nanostructures on various substrates for applications in energy harvesting, sensing, optoelectronics, and electronic devices. © 2010 American Chemical Society.en
dc.description.sponsorshipResearch was supported by DARPA (Army/AMCOM/REDSTONE AR, W31P4Q-08-1-0009), BES DOE (DE-FG02-07ER46394), KAUST Global Research Partnership, NSF (DMS0706436, CMMI 0403671), MANA WPI program from NIMS, Japan, and the Georgia Institute of Technology. The authors thank Dr. Jung-II Hong and Shu Xiang for technical assistance and discussions on XRD measurements.en
dc.publisherAmerican Chemical Society (ACS)en
dc.subjectarraysen
dc.subjectlaser interference lithographyen
dc.subjectnanofabricationen
dc.subjectnanowireen
dc.subjectZnOen
dc.titleWafer-Scale High-Throughput Ordered Growth of Vertically Aligned ZnO Nanowire Arraysen
dc.typeArticleen
dc.identifier.journalNano Lettersen
dc.contributor.institutionGeorgia Institute of Technology, Atlanta, United Statesen
dc.contributor.institutionThe George W. Woodruff School of Mechanical Engineering, Atlanta, United Statesen
kaust.grant.numberDMS0706436en
kaust.grant.numberCMMI 0403671en

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