Ultraviolet light emitting diodes by ammonia molecular beam epitaxy on metamorphic (
Handle URI:
http://hdl.handle.net/10754/600122
Title:
Ultraviolet light emitting diodes by ammonia molecular beam epitaxy on metamorphic (<mml:math altimg="si0001.gif" overflow="scroll" xmlns:xocs="http://www.elsevier.com/xml/xocs/dtd" xmlns:xs="http://www.w3.org/2001/XMLSchema" xmlns:xsi="http://www.w3.org/
Authors:
Young, Erin C.; Yonkee, Benjamin P.; Wu, Feng; Saifaddin, Burhan K.; Cohen, Daniel A.; DenBaars, Steve P.; Nakamura, Shuji; Speck, James S.
Abstract:
© 2015. In this paper we demonstrate ultraviolet (UV) light emitting diodes (LEDs) grown on metamorphic AlGaN buffers on freestanding GaN (202-1) substrates by ammonia assisted molecular beam epitaxy (MBE). Misfit and related threading dislocations were confined to the stress relaxed, compositionally graded buffer layers, and single quantum well devices emitting at 355, 310 and 274. nm were grown on top of the graded buffers. The devices showed excellent structural and electrical (I-. V) characteristics.
Citation:
Young EC, Yonkee BP, Wu F, Saifaddin BK, Cohen DA, et al. (2015) Ultraviolet light emitting diodes by ammonia molecular beam epitaxy on metamorphic (<mml:math altimg=“si0001.gif” overflow=“scroll” xmlns:xocs=“http://www.elsevier.com/xml/xocs/dtd” xmlns:xs=“http://www.w3.org/2001/XMLSchema” xmlns:xsi=“http://www.w3.org/2001/XMLSchema-instance” xmlns=“http://www.elsevier.com/xml/ja/dtd” xmlns:ja=“http://www.elsevier.com/xml/ja/dtd” xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:tb=“http://www.elsevier.com/xml/common/table/dtd” xmlns:sb=“http://www.elsevier.com/xml/common/struct-bib/dtd” xmlns:ce=“http://www.elsevier.com/xml/common/dtd” xmlns:xlink=“http://www.w3.org/1999/xlink” xmlns:cals=“http://www.elsevier.com/xml/common/cals/dtd” xmlns:sa=“http://www.elsevier.com/xml/common/struct-aff/dtd”><mml:mn>20</mml:mn><mml:mover accent=“true”><mml:mn>2</mml:mn><mml:mo>¯</mml:mo></mml:mover><mml:mn>1</mml:mn></mml:math>) AlGaN/GaN buffer layers. Journal of Crystal Growth 425: 389–392. Available: http://dx.doi.org/10.1016/j.jcrysgro.2015.02.081.
Publisher:
Elsevier BV
Journal:
Journal of Crystal Growth
Issue Date:
Sep-2015
DOI:
10.1016/j.jcrysgro.2015.02.081
Type:
Article
ISSN:
0022-0248
Sponsors:
This work was supported by the KAUST-KACST-UCSB Solid State Lighting Program and the DARPA CMUVT program (PM: Dan Green).
Appears in Collections:
Publications Acknowledging KAUST Support

Full metadata record

DC FieldValue Language
dc.contributor.authorYoung, Erin C.en
dc.contributor.authorYonkee, Benjamin P.en
dc.contributor.authorWu, Fengen
dc.contributor.authorSaifaddin, Burhan K.en
dc.contributor.authorCohen, Daniel A.en
dc.contributor.authorDenBaars, Steve P.en
dc.contributor.authorNakamura, Shujien
dc.contributor.authorSpeck, James S.en
dc.date.accessioned2016-02-28T06:43:08Zen
dc.date.available2016-02-28T06:43:08Zen
dc.date.issued2015-09en
dc.identifier.citationYoung EC, Yonkee BP, Wu F, Saifaddin BK, Cohen DA, et al. (2015) Ultraviolet light emitting diodes by ammonia molecular beam epitaxy on metamorphic (<mml:math altimg=“si0001.gif” overflow=“scroll” xmlns:xocs=“http://www.elsevier.com/xml/xocs/dtd” xmlns:xs=“http://www.w3.org/2001/XMLSchema” xmlns:xsi=“http://www.w3.org/2001/XMLSchema-instance” xmlns=“http://www.elsevier.com/xml/ja/dtd” xmlns:ja=“http://www.elsevier.com/xml/ja/dtd” xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:tb=“http://www.elsevier.com/xml/common/table/dtd” xmlns:sb=“http://www.elsevier.com/xml/common/struct-bib/dtd” xmlns:ce=“http://www.elsevier.com/xml/common/dtd” xmlns:xlink=“http://www.w3.org/1999/xlink” xmlns:cals=“http://www.elsevier.com/xml/common/cals/dtd” xmlns:sa=“http://www.elsevier.com/xml/common/struct-aff/dtd”><mml:mn>20</mml:mn><mml:mover accent=“true”><mml:mn>2</mml:mn><mml:mo>¯</mml:mo></mml:mover><mml:mn>1</mml:mn></mml:math>) AlGaN/GaN buffer layers. Journal of Crystal Growth 425: 389–392. Available: http://dx.doi.org/10.1016/j.jcrysgro.2015.02.081.en
dc.identifier.issn0022-0248en
dc.identifier.doi10.1016/j.jcrysgro.2015.02.081en
dc.identifier.urihttp://hdl.handle.net/10754/600122en
dc.description.abstract© 2015. In this paper we demonstrate ultraviolet (UV) light emitting diodes (LEDs) grown on metamorphic AlGaN buffers on freestanding GaN (202-1) substrates by ammonia assisted molecular beam epitaxy (MBE). Misfit and related threading dislocations were confined to the stress relaxed, compositionally graded buffer layers, and single quantum well devices emitting at 355, 310 and 274. nm were grown on top of the graded buffers. The devices showed excellent structural and electrical (I-. V) characteristics.en
dc.description.sponsorshipThis work was supported by the KAUST-KACST-UCSB Solid State Lighting Program and the DARPA CMUVT program (PM: Dan Green).en
dc.publisherElsevier BVen
dc.subjectA3 Molecular beam epitaxyen
dc.subjectB1 Nitridesen
dc.subjectB2 Semiconducting gallium compoundsen
dc.subjectB3 Light emitting diodesen
dc.titleUltraviolet light emitting diodes by ammonia molecular beam epitaxy on metamorphic (<mml:math altimg="si0001.gif" overflow="scroll" xmlns:xocs="http://www.elsevier.com/xml/xocs/dtd" xmlns:xs="http://www.w3.org/2001/XMLSchema" xmlns:xsi="http://www.w3.org/en
dc.typeArticleen
dc.identifier.journalJournal of Crystal Growthen
dc.contributor.institutionUniversity of California, Santa Barbara, Santa Barbara, United Statesen
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