Ultradense, Deep Subwavelength Nanowire Array Photovoltaics As Engineered Optical Thin Films

Handle URI:
http://hdl.handle.net/10754/600117
Title:
Ultradense, Deep Subwavelength Nanowire Array Photovoltaics As Engineered Optical Thin Films
Authors:
Tham, Douglas; Heath, James R.
Abstract:
A photovoltaic device comprised of an array of 20 nm wide, 32 nm pitch array of silicon nanowires is modeled as an optical material. The nanowire array (NWA) has characteristic device features that are deep in the subwavelength regime for light, which permits a number of simplifying approximations. Using photocurrent measurements as a probe of the absorptance, we show that the NWA optical properties can be accurately modeled with rigorous coupled-wave analysis. The densely structured NWAs behave as homogeneous birefringent materials into the ultraviolet with effective optical properties that are accurately modeled using the dielectric functions of bulk Si and SiO 2, coupled with a physical model for the NWA derived from ellipsometry and transmission electron microscopy. © 2010 American Chemical Society.
Citation:
Tham D, Heath JR (2010) Ultradense, Deep Subwavelength Nanowire Array Photovoltaics As Engineered Optical Thin Films. Nano Lett 10: 4429–4434. Available: http://dx.doi.org/10.1021/nl102199b.
Publisher:
American Chemical Society (ACS)
Journal:
Nano Letters
Issue Date:
10-Nov-2010
DOI:
10.1021/nl102199b
PubMed ID:
20931993
Type:
Article
ISSN:
1530-6984; 1530-6992
Sponsors:
This work was funded by the Department of Energy (DE-FG02-04ER46175). D.T. gratefully acknowledges support by the KAUST Scholar Award. Minority carrier diffusion length measurements were made at the Molecular Materials Research Center of the Beckman Institute, while FIB lift-out and TEM imaging were performed in the Kavli Nanoscience Institute, both at the California Institute of Technology.
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Publications Acknowledging KAUST Support

Full metadata record

DC FieldValue Language
dc.contributor.authorTham, Douglasen
dc.contributor.authorHeath, James R.en
dc.date.accessioned2016-02-28T06:43:01Zen
dc.date.available2016-02-28T06:43:01Zen
dc.date.issued2010-11-10en
dc.identifier.citationTham D, Heath JR (2010) Ultradense, Deep Subwavelength Nanowire Array Photovoltaics As Engineered Optical Thin Films. Nano Lett 10: 4429–4434. Available: http://dx.doi.org/10.1021/nl102199b.en
dc.identifier.issn1530-6984en
dc.identifier.issn1530-6992en
dc.identifier.pmid20931993en
dc.identifier.doi10.1021/nl102199ben
dc.identifier.urihttp://hdl.handle.net/10754/600117en
dc.description.abstractA photovoltaic device comprised of an array of 20 nm wide, 32 nm pitch array of silicon nanowires is modeled as an optical material. The nanowire array (NWA) has characteristic device features that are deep in the subwavelength regime for light, which permits a number of simplifying approximations. Using photocurrent measurements as a probe of the absorptance, we show that the NWA optical properties can be accurately modeled with rigorous coupled-wave analysis. The densely structured NWAs behave as homogeneous birefringent materials into the ultraviolet with effective optical properties that are accurately modeled using the dielectric functions of bulk Si and SiO 2, coupled with a physical model for the NWA derived from ellipsometry and transmission electron microscopy. © 2010 American Chemical Society.en
dc.description.sponsorshipThis work was funded by the Department of Energy (DE-FG02-04ER46175). D.T. gratefully acknowledges support by the KAUST Scholar Award. Minority carrier diffusion length measurements were made at the Molecular Materials Research Center of the Beckman Institute, while FIB lift-out and TEM imaging were performed in the Kavli Nanoscience Institute, both at the California Institute of Technology.en
dc.publisherAmerican Chemical Society (ACS)en
dc.subjectbirefringenceen
dc.subjectnanowireen
dc.subjectphotovoltaicen
dc.subjectSiliconen
dc.titleUltradense, Deep Subwavelength Nanowire Array Photovoltaics As Engineered Optical Thin Filmsen
dc.typeArticleen
dc.identifier.journalNano Lettersen
dc.contributor.institutionCalifornia Institute of Technology, Pasadena, United Statesen

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