Handle URI:
http://hdl.handle.net/10754/600036
Title:
Topological Insulator Nanowires and Nanoribbons
Authors:
Kong, Desheng; Randel, Jason C.; Peng, Hailin; Cha, Judy J.; Meister, Stefan; Lai, Keji; Chen, Yulin; Shen, Zhi-Xun; Manoharan, Hari C.; Cui, Yi
Abstract:
Recent theoretical calculations and photoemission spectroscopy measurements on the bulk Bi2Se3 material show that it is a three-dimensional topological insulator possessing conductive surface states with nondegenerate spins, attractive for dissipationless electronics and spintronics applications. Nanoscale topological insulator materials have a large surface-to-volume ratio that can manifest the conductive surface states and are promising candidates for devices. Here we report the synthesis and characterization of high quality single crystalline Bi2Se5 nanomaterials with a variety of morphologies. The synthesis of Bi 2Se5 nanowires and nanoribbons employs Au-catalyzed vapor-liquid-solid (VLS) mechanism. Nanowires, which exhibit rough surfaces, are formed by stacking nanoplatelets along the axial direction of the wires. Nanoribbons are grown along [1120] direction with a rectangular cross-section and have diverse morphologies, including quasi-one-dimensional, sheetlike, zigzag and sawtooth shapes. Scanning tunneling microscopy (STM) studies on nanoribbons show atomically smooth surfaces with ∼ 1 nm step edges, indicating single Se-Bi-Se-Bi-Se quintuple layers. STM measurements reveal a honeycomb atomic lattice, suggesting that the STM tip couples not only to the top Se atomic layer, but also to the Bi atomic layer underneath, which opens up the possibility to investigate the contribution of different atomic orbitais to the topological surface states. Transport measurements of a single nanoribbon device (four terminal resistance and Hall resistance) show great promise for nanoribbons as candidates to study topological surface states. © 2010 American Chemical Society.
Citation:
Kong D, Randel JC, Peng H, Cha JJ, Meister S, et al. (2010) Topological Insulator Nanowires and Nanoribbons. Nano Lett 10: 329–333. Available: http://dx.doi.org/10.1021/nl903663a.
Publisher:
American Chemical Society (ACS)
Journal:
Nano Letters
KAUST Grant Number:
KUS-11-001-12; KUS-F1-033-02
Issue Date:
13-Jan-2010
DOI:
10.1021/nl903663a
PubMed ID:
20030392
Type:
Article
ISSN:
1530-6984; 1530-6992
Sponsors:
Y.C. acknowledges the support from the King Abdullah University of Science and Technology (KAUST) Investigator Award (No. KUS-11-001-12). STM work (J.C.R. and H.C.M.) and part of transport measurements (Z.-X. S.) were supported by the Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering, under contract DE-AC02-76SSF00515, K.L. acknowledges the KAUST Postdoctoral Fellowship support (No. KUS-F1-033-02).
Appears in Collections:
Publications Acknowledging KAUST Support

Full metadata record

DC FieldValue Language
dc.contributor.authorKong, Deshengen
dc.contributor.authorRandel, Jason C.en
dc.contributor.authorPeng, Hailinen
dc.contributor.authorCha, Judy J.en
dc.contributor.authorMeister, Stefanen
dc.contributor.authorLai, Kejien
dc.contributor.authorChen, Yulinen
dc.contributor.authorShen, Zhi-Xunen
dc.contributor.authorManoharan, Hari C.en
dc.contributor.authorCui, Yien
dc.date.accessioned2016-02-28T06:34:47Zen
dc.date.available2016-02-28T06:34:47Zen
dc.date.issued2010-01-13en
dc.identifier.citationKong D, Randel JC, Peng H, Cha JJ, Meister S, et al. (2010) Topological Insulator Nanowires and Nanoribbons. Nano Lett 10: 329–333. Available: http://dx.doi.org/10.1021/nl903663a.en
dc.identifier.issn1530-6984en
dc.identifier.issn1530-6992en
dc.identifier.pmid20030392en
dc.identifier.doi10.1021/nl903663aen
dc.identifier.urihttp://hdl.handle.net/10754/600036en
dc.description.abstractRecent theoretical calculations and photoemission spectroscopy measurements on the bulk Bi2Se3 material show that it is a three-dimensional topological insulator possessing conductive surface states with nondegenerate spins, attractive for dissipationless electronics and spintronics applications. Nanoscale topological insulator materials have a large surface-to-volume ratio that can manifest the conductive surface states and are promising candidates for devices. Here we report the synthesis and characterization of high quality single crystalline Bi2Se5 nanomaterials with a variety of morphologies. The synthesis of Bi 2Se5 nanowires and nanoribbons employs Au-catalyzed vapor-liquid-solid (VLS) mechanism. Nanowires, which exhibit rough surfaces, are formed by stacking nanoplatelets along the axial direction of the wires. Nanoribbons are grown along [1120] direction with a rectangular cross-section and have diverse morphologies, including quasi-one-dimensional, sheetlike, zigzag and sawtooth shapes. Scanning tunneling microscopy (STM) studies on nanoribbons show atomically smooth surfaces with ∼ 1 nm step edges, indicating single Se-Bi-Se-Bi-Se quintuple layers. STM measurements reveal a honeycomb atomic lattice, suggesting that the STM tip couples not only to the top Se atomic layer, but also to the Bi atomic layer underneath, which opens up the possibility to investigate the contribution of different atomic orbitais to the topological surface states. Transport measurements of a single nanoribbon device (four terminal resistance and Hall resistance) show great promise for nanoribbons as candidates to study topological surface states. © 2010 American Chemical Society.en
dc.description.sponsorshipY.C. acknowledges the support from the King Abdullah University of Science and Technology (KAUST) Investigator Award (No. KUS-11-001-12). STM work (J.C.R. and H.C.M.) and part of transport measurements (Z.-X. S.) were supported by the Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering, under contract DE-AC02-76SSF00515, K.L. acknowledges the KAUST Postdoctoral Fellowship support (No. KUS-F1-033-02).en
dc.publisherAmerican Chemical Society (ACS)en
dc.subjectBismuth selenideen
dc.subjectNanoribbonen
dc.subjectNanowireen
dc.subjectTopological insulatoren
dc.titleTopological Insulator Nanowires and Nanoribbonsen
dc.typeArticleen
dc.identifier.journalNano Lettersen
dc.contributor.institutionStanford University, Palo Alto, United Statesen
dc.contributor.institutionStanford Linear Accelerator Center, Menlo Park, United Statesen
dc.contributor.institutionCollege of Chemistry and Molecular Engineering, Peking University, Beijing, Chinaen
kaust.grant.numberKUS-11-001-12en
kaust.grant.numberKUS-F1-033-02en

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