Title: Using Alignment and 2D Network Simulations to Study Charge Transport Through Doped ZnO Nanowire Thin Film Electrodes

Handle URI:
http://hdl.handle.net/10754/600032
Title:
Title: Using Alignment and 2D Network Simulations to Study Charge Transport Through Doped ZnO Nanowire Thin Film Electrodes
Authors:
Phadke, Sujay; Lee, Jung-Yong; West, Jack; Peumans, Peter; Salleo, Alberto
Abstract:
Factors affecting charge transport through ZnO nanowire mat films were studied by aligning ZnO nanowires on substrates and coupling experimental measurements with 2D nanowire network simulations. Gallium doped ZnO nanowires were aligned on thermally oxidized silicon wafer by shearing a nanowire dispersion in ethanol. Sheet resistances of nanowire thin films that had current flowing parallel to nanowire alignment direction were compared to thin films that had current flowing perpendicular to nanowire alignment direction. Perpendicular devices showed ∼5 fold greater sheet resistance than parallel devices supporting the hypothesis that aligning nanowires would increase conductivity of ZnO nanowire electrodes. 2-D nanowire network simulations of thin films showed that the device sheet resistance was dominated by inter-wire contact resistance. For a given resistivity of ZnO nanowires, the thin film electrodes would have the lowest possible sheet resistance if the inter-wire contact resistance was one order of magnitude lower than the single nanowire resistance. Simulations suggest that the conductivity of such thin film devices could be further enhanced by using longer nanowires. Solution processed Gallium doped ZnO nanowires are aligned on substrates using an innovative shear coating technique. Nanowire alignment has shown improvement in ZnO nanowire transparent electrode conductivity. 2D network simulations in conjunction with electrical measurements have revealed different regimes of operation of nanowire thin films and provided a guideline for improving electrical performance of nanowire electrodes. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Citation:
Phadke S, Lee J-Y, West J, Peumans P, Salleo A (2011) Title: Using Alignment and 2D Network Simulations to Study Charge Transport Through Doped ZnO Nanowire Thin Film Electrodes. Advanced Functional Materials 21: 4691–4697. Available: http://dx.doi.org/10.1002/adfm.201100873.
Publisher:
Wiley-Blackwell
Journal:
Advanced Functional Materials
KAUST Grant Number:
KUS-C1-015-21
Issue Date:
30-Sep-2011
DOI:
10.1002/adfm.201100873
Type:
Article
ISSN:
1616-301X
Sponsors:
This publication was partially based on work supported by the Center for Advanced Molecular Photovoltaics (Award No KUS-C1-015-21), made by King Abdullah University of Science and Technology (KAUST). The authors also acknowledge support from the US Department of Energy-EERE Solar America Initiative.
Appears in Collections:
Publications Acknowledging KAUST Support

Full metadata record

DC FieldValue Language
dc.contributor.authorPhadke, Sujayen
dc.contributor.authorLee, Jung-Yongen
dc.contributor.authorWest, Jacken
dc.contributor.authorPeumans, Peteren
dc.contributor.authorSalleo, Albertoen
dc.date.accessioned2016-02-28T06:34:42Zen
dc.date.available2016-02-28T06:34:42Zen
dc.date.issued2011-09-30en
dc.identifier.citationPhadke S, Lee J-Y, West J, Peumans P, Salleo A (2011) Title: Using Alignment and 2D Network Simulations to Study Charge Transport Through Doped ZnO Nanowire Thin Film Electrodes. Advanced Functional Materials 21: 4691–4697. Available: http://dx.doi.org/10.1002/adfm.201100873.en
dc.identifier.issn1616-301Xen
dc.identifier.doi10.1002/adfm.201100873en
dc.identifier.urihttp://hdl.handle.net/10754/600032en
dc.description.abstractFactors affecting charge transport through ZnO nanowire mat films were studied by aligning ZnO nanowires on substrates and coupling experimental measurements with 2D nanowire network simulations. Gallium doped ZnO nanowires were aligned on thermally oxidized silicon wafer by shearing a nanowire dispersion in ethanol. Sheet resistances of nanowire thin films that had current flowing parallel to nanowire alignment direction were compared to thin films that had current flowing perpendicular to nanowire alignment direction. Perpendicular devices showed ∼5 fold greater sheet resistance than parallel devices supporting the hypothesis that aligning nanowires would increase conductivity of ZnO nanowire electrodes. 2-D nanowire network simulations of thin films showed that the device sheet resistance was dominated by inter-wire contact resistance. For a given resistivity of ZnO nanowires, the thin film electrodes would have the lowest possible sheet resistance if the inter-wire contact resistance was one order of magnitude lower than the single nanowire resistance. Simulations suggest that the conductivity of such thin film devices could be further enhanced by using longer nanowires. Solution processed Gallium doped ZnO nanowires are aligned on substrates using an innovative shear coating technique. Nanowire alignment has shown improvement in ZnO nanowire transparent electrode conductivity. 2D network simulations in conjunction with electrical measurements have revealed different regimes of operation of nanowire thin films and provided a guideline for improving electrical performance of nanowire electrodes. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.en
dc.description.sponsorshipThis publication was partially based on work supported by the Center for Advanced Molecular Photovoltaics (Award No KUS-C1-015-21), made by King Abdullah University of Science and Technology (KAUST). The authors also acknowledge support from the US Department of Energy-EERE Solar America Initiative.en
dc.publisherWiley-Blackwellen
dc.subjectNanowire Alignmenten
dc.subjectNetwork Simulationsen
dc.subjectSolar Cellsen
dc.subjectTransparent Conductoren
dc.subjectZinc Oxide Nanowireen
dc.titleTitle: Using Alignment and 2D Network Simulations to Study Charge Transport Through Doped ZnO Nanowire Thin Film Electrodesen
dc.typeArticleen
dc.identifier.journalAdvanced Functional Materialsen
dc.contributor.institutionStanford University, Palo Alto, United Statesen
dc.contributor.institutionKorea Advanced Institute of Science & Technology, Yusong, South Koreaen
kaust.grant.numberKUS-C1-015-21en
kaust.grant.fundedcenterCenter for Advanced Molecular Photovoltaics (CAMP)en
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