Tailoring magnetoresistance at the atomic level: An ab initio study

Handle URI:
http://hdl.handle.net/10754/599861
Title:
Tailoring magnetoresistance at the atomic level: An ab initio study
Authors:
Tao, Kun; Stepanyuk, V. S.; Rungger, I.; Sanvito, S.
Abstract:
The possibility of manipulating the tunneling magnetoresistance (TMR) of antiferromagnetic nanostructures is predicted in the framework of ab initio calculations. By the example of a junction composed of an antiferromagnetic dimer and a spin-polarized scanning tunneling microscopy tip we show that the TMR can be tuned and even reversed in sign by lateral and vertical movements of the tip. Moreover, our finite-bias calculations demonstrate that the magnitude and the sign of the TMR can also be tuned by an external voltage. © 2012 American Physical Society.
Citation:
Tao K, Stepanyuk VS, Rungger I, Sanvito S (2012) Tailoring magnetoresistance at the atomic level: An ab initio study . Physical Review B 85. Available: http://dx.doi.org/10.1103/PhysRevB.85.045406.
Publisher:
American Physical Society (APS)
Journal:
Physical Review B
Issue Date:
5-Jan-2012
DOI:
10.1103/PhysRevB.85.045406
Type:
Article
ISSN:
1098-0121; 1550-235X
Sponsors:
SS and IR acknowledge the Science Foundation Ireland (Grant No. 07/IN.1/I945) and the King Abdullah University of Science and Technology (ACRAB project).
Appears in Collections:
Publications Acknowledging KAUST Support

Full metadata record

DC FieldValue Language
dc.contributor.authorTao, Kunen
dc.contributor.authorStepanyuk, V. S.en
dc.contributor.authorRungger, I.en
dc.contributor.authorSanvito, S.en
dc.date.accessioned2016-02-28T06:31:06Zen
dc.date.available2016-02-28T06:31:06Zen
dc.date.issued2012-01-05en
dc.identifier.citationTao K, Stepanyuk VS, Rungger I, Sanvito S (2012) Tailoring magnetoresistance at the atomic level: An ab initio study . Physical Review B 85. Available: http://dx.doi.org/10.1103/PhysRevB.85.045406.en
dc.identifier.issn1098-0121en
dc.identifier.issn1550-235Xen
dc.identifier.doi10.1103/PhysRevB.85.045406en
dc.identifier.urihttp://hdl.handle.net/10754/599861en
dc.description.abstractThe possibility of manipulating the tunneling magnetoresistance (TMR) of antiferromagnetic nanostructures is predicted in the framework of ab initio calculations. By the example of a junction composed of an antiferromagnetic dimer and a spin-polarized scanning tunneling microscopy tip we show that the TMR can be tuned and even reversed in sign by lateral and vertical movements of the tip. Moreover, our finite-bias calculations demonstrate that the magnitude and the sign of the TMR can also be tuned by an external voltage. © 2012 American Physical Society.en
dc.description.sponsorshipSS and IR acknowledge the Science Foundation Ireland (Grant No. 07/IN.1/I945) and the King Abdullah University of Science and Technology (ACRAB project).en
dc.publisherAmerican Physical Society (APS)en
dc.titleTailoring magnetoresistance at the atomic level: An ab initio studyen
dc.typeArticleen
dc.identifier.journalPhysical Review Ben
dc.contributor.institutionMax Planck Institute of Microstructure Physics, Halle, Germanyen
dc.contributor.institutionTrinity College Dublin, Dublin, Irelanden
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