Systematic study of metal-insulator-metal diodes with a native oxide

Handle URI:
http://hdl.handle.net/10754/599856
Title:
Systematic study of metal-insulator-metal diodes with a native oxide
Authors:
Donchev, E.; Gammon, P. M.; Pang, J. S.; Petrov, P. K.; Alford, N. McN.
Abstract:
© 2014 SPIE. In this paper, a systematic analysis of native oxides within a Metal-Insulator-Metal (MIM) diode is carried out, with the goal of determining their practicality for incorporation into a nanoscale Rectenna (Rectifying Antenna). The requirement of having a sub-10nm oxide scale is met by using the native oxide, which forms on most metals exposed to an oxygen containing environment. This, therefore, provides a simplified MIM fabrication process as the complex, controlled oxide deposition step is omitted. We shall present the results of an investigation into the current-voltage characteristics of various MIM combinations that incorporate a native oxide, in order to establish whether the native oxide is of sufficient quality for good diode operation. The thin native oxide layers are formed by room temperature oxidation of the first metal layer, deposited by magnetron sputtering. This is done in-situ, within the deposition chamber before depositing the second metal electrode. Using these structures, we study the established trend where the bigger the difference in metal workfunctions, the better the rectification properties of MIM structures, and hence the selection of the second metal is key to controlling the device's rectifying properties. We show how leakage current paths through the non-optimised native oxide control the net current-voltage response of the MIM devices. Furthermore, we will present the so-called diode figures of merit (asymmetry, non-linearity and responsivity) for each of the best performing structures.
Citation:
Donchev E, Gammon PM, Pang JS, Petrov PK, Alford NM (2014) Systematic study of metal-insulator-metal diodes with a native oxide. Thin Films for Solar and Energy Technology VI. Available: http://dx.doi.org/10.1117/12.2061959.
Publisher:
SPIE-Intl Soc Optical Eng
Journal:
Thin Films for Solar and Energy Technology VI
Issue Date:
7-Oct-2014
DOI:
10.1117/12.2061959
Type:
Conference Paper
Sponsors:
This work was supported by EPSRC grant number EP/G060940/1. Evgeniy Donchev would like to acknowledgethe financial support provided by the Armourers & Brasiers' Gauntlet Trust. Peter Gammon would like togratefully acknowledge the financial support from the Royal Academy of Engineering. J. S. Pang and P. K. Petrovacknowledge the financial support under the King Abdullah University for Science and Technology (KAUST)Global Collaborative Research Academic Excellence Alliance (AEA) and Academic Partnership Programs (APP).
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Full metadata record

DC FieldValue Language
dc.contributor.authorDonchev, E.en
dc.contributor.authorGammon, P. M.en
dc.contributor.authorPang, J. S.en
dc.contributor.authorPetrov, P. K.en
dc.contributor.authorAlford, N. McN.en
dc.date.accessioned2016-02-28T06:30:58Zen
dc.date.available2016-02-28T06:30:58Zen
dc.date.issued2014-10-07en
dc.identifier.citationDonchev E, Gammon PM, Pang JS, Petrov PK, Alford NM (2014) Systematic study of metal-insulator-metal diodes with a native oxide. Thin Films for Solar and Energy Technology VI. Available: http://dx.doi.org/10.1117/12.2061959.en
dc.identifier.doi10.1117/12.2061959en
dc.identifier.urihttp://hdl.handle.net/10754/599856en
dc.description.abstract© 2014 SPIE. In this paper, a systematic analysis of native oxides within a Metal-Insulator-Metal (MIM) diode is carried out, with the goal of determining their practicality for incorporation into a nanoscale Rectenna (Rectifying Antenna). The requirement of having a sub-10nm oxide scale is met by using the native oxide, which forms on most metals exposed to an oxygen containing environment. This, therefore, provides a simplified MIM fabrication process as the complex, controlled oxide deposition step is omitted. We shall present the results of an investigation into the current-voltage characteristics of various MIM combinations that incorporate a native oxide, in order to establish whether the native oxide is of sufficient quality for good diode operation. The thin native oxide layers are formed by room temperature oxidation of the first metal layer, deposited by magnetron sputtering. This is done in-situ, within the deposition chamber before depositing the second metal electrode. Using these structures, we study the established trend where the bigger the difference in metal workfunctions, the better the rectification properties of MIM structures, and hence the selection of the second metal is key to controlling the device's rectifying properties. We show how leakage current paths through the non-optimised native oxide control the net current-voltage response of the MIM devices. Furthermore, we will present the so-called diode figures of merit (asymmetry, non-linearity and responsivity) for each of the best performing structures.en
dc.description.sponsorshipThis work was supported by EPSRC grant number EP/G060940/1. Evgeniy Donchev would like to acknowledgethe financial support provided by the Armourers & Brasiers' Gauntlet Trust. Peter Gammon would like togratefully acknowledge the financial support from the Royal Academy of Engineering. J. S. Pang and P. K. Petrovacknowledge the financial support under the King Abdullah University for Science and Technology (KAUST)Global Collaborative Research Academic Excellence Alliance (AEA) and Academic Partnership Programs (APP).en
dc.publisherSPIE-Intl Soc Optical Engen
dc.subjectMetal-insulator-metalen
dc.subjectMIM diodeen
dc.subjectNative oxideen
dc.subjectRectennaen
dc.subjectTunnel diodeen
dc.titleSystematic study of metal-insulator-metal diodes with a native oxideen
dc.typeConference Paperen
dc.identifier.journalThin Films for Solar and Energy Technology VIen
dc.contributor.institutionImperial College London, London, United Kingdomen
dc.contributor.institutionThe University of Warwick, Coventry, United Kingdomen
kaust.grant.programAcademic Excellence Alliance (AEA)en
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