Suppression of slow capacitance relaxation phenomenon in Pt/Ba0.3Sr0.7TiO3/Pt thin film ferroelectric structures by annealing in oxygen atmosphere

Handle URI:
http://hdl.handle.net/10754/599805
Title:
Suppression of slow capacitance relaxation phenomenon in Pt/Ba0.3Sr0.7TiO3/Pt thin film ferroelectric structures by annealing in oxygen atmosphere
Authors:
Altynnikov, A. G.; Gagarin, A. G.; Gaidukov, M. M.; Tumarkin, A. V.; Petrov, P. K.; Alford, N.; Kozyrev, A. B.
Abstract:
The impact of oxygen annealing on the switching time of ferroelectric thin film capacitor structures Pt/Ba0.3Sr0.7TiO3/Pt was investigated. The response of their capacitance on pulsed control voltages before and after annealing was experimentally measured. It was demonstrated that the annealing results in suppression of the capacitance slow relaxation processes and increase of the threshold control voltages. These structures can therefore be attractive for fabrication of fast acting microwave devices. © 2014 Author(s).
Citation:
Altynnikov AG, Gagarin AG, Gaidukov MM, Tumarkin AV, Petrov PK, et al. (2014) Suppression of slow capacitance relaxation phenomenon in Pt/Ba0.3Sr0.7TiO3/Pt thin film ferroelectric structures by annealing in oxygen atmosphere. Applied Physics Letters 104: 042903. Available: http://dx.doi.org/10.1063/1.4863436.
Publisher:
AIP Publishing
Journal:
Applied Physics Letters
Issue Date:
27-Jan-2014
DOI:
10.1063/1.4863436
Type:
Article
ISSN:
0003-6951; 1077-3118
Sponsors:
This study was partially supported by the Ministry of Science and Education of the Russian Federation and by RFBR, research Project No. 13-02-12096 ofi-m. P. K. Petrov and N. Alford acknowledge the financial support from the EPSRC, UK (grants EP/G060940/1 and EP/H023003/1) and the King Abdullah University for Science and Technology (KAUST) Global Collaborative Research Academic Excellence Alliance (AEA) and Academic Partnership Programs (APP).
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Full metadata record

DC FieldValue Language
dc.contributor.authorAltynnikov, A. G.en
dc.contributor.authorGagarin, A. G.en
dc.contributor.authorGaidukov, M. M.en
dc.contributor.authorTumarkin, A. V.en
dc.contributor.authorPetrov, P. K.en
dc.contributor.authorAlford, N.en
dc.contributor.authorKozyrev, A. B.en
dc.date.accessioned2016-02-28T06:10:14Zen
dc.date.available2016-02-28T06:10:14Zen
dc.date.issued2014-01-27en
dc.identifier.citationAltynnikov AG, Gagarin AG, Gaidukov MM, Tumarkin AV, Petrov PK, et al. (2014) Suppression of slow capacitance relaxation phenomenon in Pt/Ba0.3Sr0.7TiO3/Pt thin film ferroelectric structures by annealing in oxygen atmosphere. Applied Physics Letters 104: 042903. Available: http://dx.doi.org/10.1063/1.4863436.en
dc.identifier.issn0003-6951en
dc.identifier.issn1077-3118en
dc.identifier.doi10.1063/1.4863436en
dc.identifier.urihttp://hdl.handle.net/10754/599805en
dc.description.abstractThe impact of oxygen annealing on the switching time of ferroelectric thin film capacitor structures Pt/Ba0.3Sr0.7TiO3/Pt was investigated. The response of their capacitance on pulsed control voltages before and after annealing was experimentally measured. It was demonstrated that the annealing results in suppression of the capacitance slow relaxation processes and increase of the threshold control voltages. These structures can therefore be attractive for fabrication of fast acting microwave devices. © 2014 Author(s).en
dc.description.sponsorshipThis study was partially supported by the Ministry of Science and Education of the Russian Federation and by RFBR, research Project No. 13-02-12096 ofi-m. P. K. Petrov and N. Alford acknowledge the financial support from the EPSRC, UK (grants EP/G060940/1 and EP/H023003/1) and the King Abdullah University for Science and Technology (KAUST) Global Collaborative Research Academic Excellence Alliance (AEA) and Academic Partnership Programs (APP).en
dc.publisherAIP Publishingen
dc.titleSuppression of slow capacitance relaxation phenomenon in Pt/Ba0.3Sr0.7TiO3/Pt thin film ferroelectric structures by annealing in oxygen atmosphereen
dc.typeArticleen
dc.identifier.journalApplied Physics Lettersen
dc.contributor.institutionSt. Petersburg Electrotechnical University (“LETI”), Prof. Popova St. 5, St. Petersburg 197376, Russiaen
dc.contributor.institutionDepartment of Materials, Imperial College London, London SW7 2AZ, United Kingdomen
kaust.grant.programAcademic Excellence Alliance (AEA)en
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