Subnanometer Ga 2 O 3 Tunnelling Layer by Atomic Layer Deposition to Achieve 1.1 V Open-Circuit Potential in Dye-Sensitized Solar Cells

Handle URI:
http://hdl.handle.net/10754/599795
Title:
Subnanometer Ga 2 O 3 Tunnelling Layer by Atomic Layer Deposition to Achieve 1.1 V Open-Circuit Potential in Dye-Sensitized Solar Cells
Authors:
Chandiran, Aravind Kumar; Tetreault, Nicolas; Humphry-Baker, Robin; Kessler, Florian; Baranoff, Etienne; Yi, Chenyi; Nazeeruddin, Mohammad Khaja; Grätzel, Michael
Abstract:
Herein, we present the first use of a gallium oxide tunnelling layer to significantly reduce electron recombination in dye-sensitized solar cells (DSC). The subnanometer coating is achieved using atomic layer deposition (ALD) and leading to a new DSC record open-circuit potential of 1.1 V with state-of-the-art organic D-π-A sensitizer and cobalt redox mediator. After ALD of only a few angstroms of Ga 2O 3, the electron back reaction is reduced by more than an order of magnitude, while charge collection efficiency and fill factor are increased by 30% and 15%, respectively. The photogenerated exciton separation processes of electron injection into the TiO 2 conduction band and the hole injection into the electrolyte are characterized in detail. © 2012 American Chemical Society.
Citation:
Chandiran AK, Tetreault N, Humphry-Baker R, Kessler F, Baranoff E, et al. (2012) Subnanometer Ga 2 O 3 Tunnelling Layer by Atomic Layer Deposition to Achieve 1.1 V Open-Circuit Potential in Dye-Sensitized Solar Cells . Nano Lett 12: 3941–3947. Available: http://dx.doi.org/10.1021/nl301023r.
Publisher:
American Chemical Society (ACS)
Journal:
Nano Letters
KAUST Grant Number:
KUS-C1-015- 21
Issue Date:
8-Aug-2012
DOI:
10.1021/nl301023r
PubMed ID:
22681486
Type:
Article
ISSN:
1530-6984; 1530-6992
Sponsors:
The authors acknowledge the financial contribution from EU FP7 project "ORION" grant agreement no. NMP-229036. This publication is partially based on work supported by the Center for Advanced Molecular Photovoltaics (award no. KUS-C1-015- 21), made by King Abdullah University of Science and Technology (KAUST). A.K.C. is grateful for financial support from the Balzan foundation as part of the 2009 Balzan Prize award to M.G. A.K.C. also thanks Dr. Hoi Nok Tsao and Dr. Aswani Yella for their valuable suggestions on electrolyte composition.
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Full metadata record

DC FieldValue Language
dc.contributor.authorChandiran, Aravind Kumaren
dc.contributor.authorTetreault, Nicolasen
dc.contributor.authorHumphry-Baker, Robinen
dc.contributor.authorKessler, Florianen
dc.contributor.authorBaranoff, Etienneen
dc.contributor.authorYi, Chenyien
dc.contributor.authorNazeeruddin, Mohammad Khajaen
dc.contributor.authorGrätzel, Michaelen
dc.date.accessioned2016-02-28T06:10:00Zen
dc.date.available2016-02-28T06:10:00Zen
dc.date.issued2012-08-08en
dc.identifier.citationChandiran AK, Tetreault N, Humphry-Baker R, Kessler F, Baranoff E, et al. (2012) Subnanometer Ga 2 O 3 Tunnelling Layer by Atomic Layer Deposition to Achieve 1.1 V Open-Circuit Potential in Dye-Sensitized Solar Cells . Nano Lett 12: 3941–3947. Available: http://dx.doi.org/10.1021/nl301023r.en
dc.identifier.issn1530-6984en
dc.identifier.issn1530-6992en
dc.identifier.pmid22681486en
dc.identifier.doi10.1021/nl301023ren
dc.identifier.urihttp://hdl.handle.net/10754/599795en
dc.description.abstractHerein, we present the first use of a gallium oxide tunnelling layer to significantly reduce electron recombination in dye-sensitized solar cells (DSC). The subnanometer coating is achieved using atomic layer deposition (ALD) and leading to a new DSC record open-circuit potential of 1.1 V with state-of-the-art organic D-π-A sensitizer and cobalt redox mediator. After ALD of only a few angstroms of Ga 2O 3, the electron back reaction is reduced by more than an order of magnitude, while charge collection efficiency and fill factor are increased by 30% and 15%, respectively. The photogenerated exciton separation processes of electron injection into the TiO 2 conduction band and the hole injection into the electrolyte are characterized in detail. © 2012 American Chemical Society.en
dc.description.sponsorshipThe authors acknowledge the financial contribution from EU FP7 project "ORION" grant agreement no. NMP-229036. This publication is partially based on work supported by the Center for Advanced Molecular Photovoltaics (award no. KUS-C1-015- 21), made by King Abdullah University of Science and Technology (KAUST). A.K.C. is grateful for financial support from the Balzan foundation as part of the 2009 Balzan Prize award to M.G. A.K.C. also thanks Dr. Hoi Nok Tsao and Dr. Aswani Yella for their valuable suggestions on electrolyte composition.en
dc.publisherAmerican Chemical Society (ACS)en
dc.subjectAtomic layer depositionen
dc.subjectdye-sensitized solar cellen
dc.subjectelectron recombinationen
dc.subjectgallium oxideen
dc.subjecttunnelling layeren
dc.titleSubnanometer Ga 2 O 3 Tunnelling Layer by Atomic Layer Deposition to Achieve 1.1 V Open-Circuit Potential in Dye-Sensitized Solar Cellsen
dc.typeArticleen
dc.identifier.journalNano Lettersen
dc.contributor.institutionEcole Polytechnique Federale de Lausanne, Lausanne, Switzerlanden
kaust.grant.numberKUS-C1-015- 21en
kaust.grant.fundedcenterCenter for Advanced Molecular Photovoltaics (CAMP)en

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