Solution coating of large-area organic semiconductor thin films with aligned single-crystalline domains

Handle URI:
http://hdl.handle.net/10754/599659
Title:
Solution coating of large-area organic semiconductor thin films with aligned single-crystalline domains
Authors:
Diao, Ying; Tee, Benjamin C-K.; Giri, Gaurav; Xu, Jie; Kim, Do Hwan; Becerril, Hector A.; Stoltenberg, Randall M.; Lee, Tae Hoon; Xue, Gi; Mannsfeld, Stefan C. B.; Bao, Zhenan
Abstract:
Solution coating of organic semiconductors offers great potential for achieving low-cost manufacturing of large-area and flexible electronics. However, the rapid coating speed needed for industrial-scale production poses challenges to the control of thin-film morphology. Here, we report an approach - termed fluid-enhanced crystal engineering (FLUENCE) - that allows for a high degree of morphological control of solution-printed thin films. We designed a micropillar-patterned printing blade to induce recirculation in the ink for enhancing crystal growth, and engineered the curvature of the ink meniscus to control crystal nucleation. Using FLUENCE, we demonstrate the fast coating and patterning of millimetre-wide, centimetre-long, highly aligned single-crystalline organic semiconductor thin films. In particular, we fabricated thin films of 6,13-bis(triisopropylsilylethynyl) pentacene having non-equilibrium single-crystalline domains and an unprecedented average and maximum mobilities of 8.1±1.2 cm2 V-1 s -1 and 11 cm2 V-1 s-1. FLUENCE of organic semiconductors with non-equilibrium single-crystalline domains may find use in the fabrication of high-performance, large-area printed electronics. © 2013 Macmillan Publishers Limited. All rights reserved.
Citation:
Diao Y, Tee BC-K, Giri G, Xu J, Kim DH, et al. (2013) Solution coating of large-area organic semiconductor thin films with aligned single-crystalline domains. Nat Mater 12: 665–671. Available: http://dx.doi.org/10.1038/nmat3650.
Publisher:
Springer Nature
Journal:
Nature Materials
KAUST Grant Number:
KUS-C1-015-21
Issue Date:
2-Jun-2013
DOI:
10.1038/nmat3650
PubMed ID:
23727951
Type:
Article
ISSN:
1476-1122; 1476-4660
Sponsors:
This work is supported by the Department of Energy, Laboratory Directed Research and Development funding, under contract DE-AC02-76SF00515 (Y.D.). We are grateful to M. Toney at Stanford Synchrotron Radiation Lighsource (SSRL) for valuable input. We give thanks to J. E. Anthony and M. M. Nelson of 3M for providing high-purity TIPS-pentacene. We appreciate helpful discussions with O. Goto from the Chemical Engineering department at Stanford. Portions of this research were carried out at the Stanford Synchrotron Radiation Lightsource, a national user facility operated by Stanford University on behalf of the US DOE, Office of Basic Energy Sciences. B.C-K.T. acknowledges support from a National Science Scholarship from the Agency for Science, Technology and Research (A*STAR), Singapore. G.G., H.A.B. and Z.B. acknowledge support from the National Science Foundation DMR-Solid State Chemistry (DMR-0705687-002). J.X. and G.X. acknowledge the National Science Foundation of China (NSFC 51133002) for financial support. D.H.K. and Z.B. acknowledge the support by the Center for Advanced Molecular Photovoltaics, award no. KUS-C1-015-21, made by King Abdullah University of Science and Technology. R.M.S. acknowledges financial support from the National Science Foundation Graduate Research Fellowship Program. T.H.L. acknowledges support from Toshiba through the Stanford CIS-FMA programme and the ILJU foundation in South Korea.
Appears in Collections:
Publications Acknowledging KAUST Support

Full metadata record

DC FieldValue Language
dc.contributor.authorDiao, Yingen
dc.contributor.authorTee, Benjamin C-K.en
dc.contributor.authorGiri, Gauraven
dc.contributor.authorXu, Jieen
dc.contributor.authorKim, Do Hwanen
dc.contributor.authorBecerril, Hector A.en
dc.contributor.authorStoltenberg, Randall M.en
dc.contributor.authorLee, Tae Hoonen
dc.contributor.authorXue, Gien
dc.contributor.authorMannsfeld, Stefan C. B.en
dc.contributor.authorBao, Zhenanen
dc.date.accessioned2016-02-28T06:06:54Zen
dc.date.available2016-02-28T06:06:54Zen
dc.date.issued2013-06-02en
dc.identifier.citationDiao Y, Tee BC-K, Giri G, Xu J, Kim DH, et al. (2013) Solution coating of large-area organic semiconductor thin films with aligned single-crystalline domains. Nat Mater 12: 665–671. Available: http://dx.doi.org/10.1038/nmat3650.en
dc.identifier.issn1476-1122en
dc.identifier.issn1476-4660en
dc.identifier.pmid23727951en
dc.identifier.doi10.1038/nmat3650en
dc.identifier.urihttp://hdl.handle.net/10754/599659en
dc.description.abstractSolution coating of organic semiconductors offers great potential for achieving low-cost manufacturing of large-area and flexible electronics. However, the rapid coating speed needed for industrial-scale production poses challenges to the control of thin-film morphology. Here, we report an approach - termed fluid-enhanced crystal engineering (FLUENCE) - that allows for a high degree of morphological control of solution-printed thin films. We designed a micropillar-patterned printing blade to induce recirculation in the ink for enhancing crystal growth, and engineered the curvature of the ink meniscus to control crystal nucleation. Using FLUENCE, we demonstrate the fast coating and patterning of millimetre-wide, centimetre-long, highly aligned single-crystalline organic semiconductor thin films. In particular, we fabricated thin films of 6,13-bis(triisopropylsilylethynyl) pentacene having non-equilibrium single-crystalline domains and an unprecedented average and maximum mobilities of 8.1±1.2 cm2 V-1 s -1 and 11 cm2 V-1 s-1. FLUENCE of organic semiconductors with non-equilibrium single-crystalline domains may find use in the fabrication of high-performance, large-area printed electronics. © 2013 Macmillan Publishers Limited. All rights reserved.en
dc.description.sponsorshipThis work is supported by the Department of Energy, Laboratory Directed Research and Development funding, under contract DE-AC02-76SF00515 (Y.D.). We are grateful to M. Toney at Stanford Synchrotron Radiation Lighsource (SSRL) for valuable input. We give thanks to J. E. Anthony and M. M. Nelson of 3M for providing high-purity TIPS-pentacene. We appreciate helpful discussions with O. Goto from the Chemical Engineering department at Stanford. Portions of this research were carried out at the Stanford Synchrotron Radiation Lightsource, a national user facility operated by Stanford University on behalf of the US DOE, Office of Basic Energy Sciences. B.C-K.T. acknowledges support from a National Science Scholarship from the Agency for Science, Technology and Research (A*STAR), Singapore. G.G., H.A.B. and Z.B. acknowledge support from the National Science Foundation DMR-Solid State Chemistry (DMR-0705687-002). J.X. and G.X. acknowledge the National Science Foundation of China (NSFC 51133002) for financial support. D.H.K. and Z.B. acknowledge the support by the Center for Advanced Molecular Photovoltaics, award no. KUS-C1-015-21, made by King Abdullah University of Science and Technology. R.M.S. acknowledges financial support from the National Science Foundation Graduate Research Fellowship Program. T.H.L. acknowledges support from Toshiba through the Stanford CIS-FMA programme and the ILJU foundation in South Korea.en
dc.publisherSpringer Natureen
dc.titleSolution coating of large-area organic semiconductor thin films with aligned single-crystalline domainsen
dc.typeArticleen
dc.identifier.journalNature Materialsen
dc.contributor.institutionStanford University, Palo Alto, United Statesen
dc.contributor.institutionNanjing University, Nanjing, Chinaen
dc.contributor.institutionStanford Synchrotron Radiation Laboratory, Menlo Park, United Statesen
dc.contributor.institutionSoongsil University, Seoul, South Koreaen
dc.contributor.institutionBrigham Young University, Provo, United Statesen
dc.contributor.institutionLockheed Martin Space Systems, Sunnyvale, United Statesen
kaust.grant.numberKUS-C1-015-21en
kaust.grant.fundedcenterCenter for Advanced Molecular Photovoltaics (CAMP)en

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