Handle URI:
http://hdl.handle.net/10754/599614
Title:
Silicon nanowire hybrid photovoltaics
Authors:
Garnett, Erik C.; Peters, Craig; Brongersma, Mark; Cui, Yi; McGehee, Mike
Abstract:
Silicon nanowire Schottky junction solar cells have been fabricated using n-type silicon nanowire arrays and a spin-coated conductive polymer (PEDOT). The polymer Schottky junction cells show superior surface passivation and open-circuit voltages compared to standard diffused junction cells with native oxide surfaces. External quantum efficiencies up to 88% were measured for these silicon nanowire/PEDOT solar cells further demonstrating excellent surface passivation. This process avoids high temperature processes which allows for low-cost substrates to be used. © 2010 IEEE.
Citation:
Garnett EC, Peters C, Brongersma M, Cui Y, McGehee M (2010) Silicon nanowire hybrid photovoltaics. 2010 35th IEEE Photovoltaic Specialists Conference. Available: http://dx.doi.org/10.1109/PVSC.2010.5614661.
Publisher:
Institute of Electrical and Electronics Engineers (IEEE)
Journal:
2010 35th IEEE Photovoltaic Specialists Conference
Issue Date:
Jun-2010
DOI:
10.1109/PVSC.2010.5614661
Type:
Conference Paper
Sponsors:
We would like to thank Whitney Gaynor forpreparing the pressed silver nanowire film. The GlobalClimate and Energy Project (GCEP) at Stanford Universityand the Center for Advanced Molecular Photovoltaicssponsored by King Abdullah University of Science andTechnology provided the funding for this project.
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Full metadata record

DC FieldValue Language
dc.contributor.authorGarnett, Erik C.en
dc.contributor.authorPeters, Craigen
dc.contributor.authorBrongersma, Marken
dc.contributor.authorCui, Yien
dc.contributor.authorMcGehee, Mikeen
dc.date.accessioned2016-02-28T06:05:50Zen
dc.date.available2016-02-28T06:05:50Zen
dc.date.issued2010-06en
dc.identifier.citationGarnett EC, Peters C, Brongersma M, Cui Y, McGehee M (2010) Silicon nanowire hybrid photovoltaics. 2010 35th IEEE Photovoltaic Specialists Conference. Available: http://dx.doi.org/10.1109/PVSC.2010.5614661.en
dc.identifier.doi10.1109/PVSC.2010.5614661en
dc.identifier.urihttp://hdl.handle.net/10754/599614en
dc.description.abstractSilicon nanowire Schottky junction solar cells have been fabricated using n-type silicon nanowire arrays and a spin-coated conductive polymer (PEDOT). The polymer Schottky junction cells show superior surface passivation and open-circuit voltages compared to standard diffused junction cells with native oxide surfaces. External quantum efficiencies up to 88% were measured for these silicon nanowire/PEDOT solar cells further demonstrating excellent surface passivation. This process avoids high temperature processes which allows for low-cost substrates to be used. © 2010 IEEE.en
dc.description.sponsorshipWe would like to thank Whitney Gaynor forpreparing the pressed silver nanowire film. The GlobalClimate and Energy Project (GCEP) at Stanford Universityand the Center for Advanced Molecular Photovoltaicssponsored by King Abdullah University of Science andTechnology provided the funding for this project.en
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.titleSilicon nanowire hybrid photovoltaicsen
dc.typeConference Paperen
dc.identifier.journal2010 35th IEEE Photovoltaic Specialists Conferenceen
dc.contributor.institutionStanford University, Palo Alto, United Statesen
kaust.grant.fundedcenterCenter for Advanced Molecular Photovoltaics (CAMP)en
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