Role of band states and trap states in the electrical properties of organic semiconductors: Hopping versus mobility edge model

Handle URI:
http://hdl.handle.net/10754/599530
Title:
Role of band states and trap states in the electrical properties of organic semiconductors: Hopping versus mobility edge model
Authors:
Mehraeen, Shafigh; Coropceanu, Veaceslav; Brédas, Jean-Luc
Abstract:
We compare the merits of a hopping model and a mobility edge model in the description of the effect of charge-carrier concentration on the electrical conductivity, carrier mobility, and Fermi energy of organic semiconductors. We consider the case of a composite electronic density of states (DOS) that consists of a superposition of a Gaussian DOS and an exponential DOS. Using kinetic Monte Carlo simulations, we apply the two models in order to interpret the recent experimental data reported for n-doped C60 films. While both models are capable of reproducing the experimental data very well and yield qualitatively similar characteristic parameters for the density of states, some discrepancies are found at the quantitative level. © 2013 American Physical Society.
Citation:
Mehraeen S, Coropceanu V, Brédas J-L (2013) Role of band states and trap states in the electrical properties of organic semiconductors: Hopping versus mobility edge model. Physical Review B 87. Available: http://dx.doi.org/10.1103/PhysRevB.87.195209.
Publisher:
American Physical Society (APS)
Journal:
Physical Review B
KAUST Grant Number:
KUS-C1-015-21
Issue Date:
May-2013
DOI:
10.1103/PhysRevB.87.195209
Type:
Article
ISSN:
1098-0121; 1550-235X
Sponsors:
We thank Antoine Kahn and Selina Olthof for many fruitful discussions. This work has been supported by the King Abdullah University of Science and Technology (KAUST), Award No. KUS-C1-015-21, in the framework of the Center for Advanced Molecular Photovoltaics (CAMP). Computational resources have been provided by the CRIF Program of the National Science Foundation under Award CHE-0946869.
Appears in Collections:
Publications Acknowledging KAUST Support

Full metadata record

DC FieldValue Language
dc.contributor.authorMehraeen, Shafighen
dc.contributor.authorCoropceanu, Veaceslaven
dc.contributor.authorBrédas, Jean-Lucen
dc.date.accessioned2016-02-28T05:52:51Zen
dc.date.available2016-02-28T05:52:51Zen
dc.date.issued2013-05en
dc.identifier.citationMehraeen S, Coropceanu V, Brédas J-L (2013) Role of band states and trap states in the electrical properties of organic semiconductors: Hopping versus mobility edge model. Physical Review B 87. Available: http://dx.doi.org/10.1103/PhysRevB.87.195209.en
dc.identifier.issn1098-0121en
dc.identifier.issn1550-235Xen
dc.identifier.doi10.1103/PhysRevB.87.195209en
dc.identifier.urihttp://hdl.handle.net/10754/599530en
dc.description.abstractWe compare the merits of a hopping model and a mobility edge model in the description of the effect of charge-carrier concentration on the electrical conductivity, carrier mobility, and Fermi energy of organic semiconductors. We consider the case of a composite electronic density of states (DOS) that consists of a superposition of a Gaussian DOS and an exponential DOS. Using kinetic Monte Carlo simulations, we apply the two models in order to interpret the recent experimental data reported for n-doped C60 films. While both models are capable of reproducing the experimental data very well and yield qualitatively similar characteristic parameters for the density of states, some discrepancies are found at the quantitative level. © 2013 American Physical Society.en
dc.description.sponsorshipWe thank Antoine Kahn and Selina Olthof for many fruitful discussions. This work has been supported by the King Abdullah University of Science and Technology (KAUST), Award No. KUS-C1-015-21, in the framework of the Center for Advanced Molecular Photovoltaics (CAMP). Computational resources have been provided by the CRIF Program of the National Science Foundation under Award CHE-0946869.en
dc.publisherAmerican Physical Society (APS)en
dc.titleRole of band states and trap states in the electrical properties of organic semiconductors: Hopping versus mobility edge modelen
dc.typeArticleen
dc.identifier.journalPhysical Review Ben
dc.contributor.institutionGeorgia Institute of Technology, Atlanta, United Statesen
kaust.grant.numberKUS-C1-015-21en
kaust.grant.fundedcenterCenter for Advanced Molecular Photovoltaics (CAMP)en
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