Recombination barrier layers in solid-state quantum dot-sensitized solar cells

Handle URI:
http://hdl.handle.net/10754/599463
Title:
Recombination barrier layers in solid-state quantum dot-sensitized solar cells
Authors:
Roelofs, Katherine E.; Brennan, Thomas P.; Dominguez, Juan C.; Bent, Stacey F.
Abstract:
By replacing the dye in the dye-sensitized solar cell design with semiconductor quantum dots as the light-absorbing material, solid-state quantum dot-sensitized solar cells (ss-QDSSCs) were fabricated. Cadmium sulfide quantum dots (QDs) were grown in situ by successive ion layer adsorption and reaction (SILAR). Aluminum oxide recombination barrier layers were deposited by atomic layer deposition (ALD) at the TiO2/hole-conductor interface. For low numbers of ALD cycles, the Al2O3 barrier layer increased open circuit voltage, causing an increase in device efficiency. For thicker Al2O3 barrier layers, photocurrent decreased substantially, leading to a decrease in device efficiency. © 2012 IEEE.
Citation:
Roelofs KE, Brennan TP, Dominguez JC, Bent SF (2012) Recombination barrier layers in solid-state quantum dot-sensitized solar cells. 2012 38th IEEE Photovoltaic Specialists Conference. Available: http://dx.doi.org/10.1109/PVSC.2012.6318223.
Publisher:
Institute of Electrical and Electronics Engineers (IEEE)
Journal:
2012 38th IEEE Photovoltaic Specialists Conference
Issue Date:
Jun-2012
DOI:
10.1109/PVSC.2012.6318223
Type:
Conference Paper
Sponsors:
We would like to thank the McGehee group at Stanford forthe use of materials and equipment. This work was supportedby the Center for Advanced Molecular Photovoltaics, made bythe King Abdullah University of Science and Technology(KAUST).
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Full metadata record

DC FieldValue Language
dc.contributor.authorRoelofs, Katherine E.en
dc.contributor.authorBrennan, Thomas P.en
dc.contributor.authorDominguez, Juan C.en
dc.contributor.authorBent, Stacey F.en
dc.date.accessioned2016-02-28T05:51:36Zen
dc.date.available2016-02-28T05:51:36Zen
dc.date.issued2012-06en
dc.identifier.citationRoelofs KE, Brennan TP, Dominguez JC, Bent SF (2012) Recombination barrier layers in solid-state quantum dot-sensitized solar cells. 2012 38th IEEE Photovoltaic Specialists Conference. Available: http://dx.doi.org/10.1109/PVSC.2012.6318223.en
dc.identifier.doi10.1109/PVSC.2012.6318223en
dc.identifier.urihttp://hdl.handle.net/10754/599463en
dc.description.abstractBy replacing the dye in the dye-sensitized solar cell design with semiconductor quantum dots as the light-absorbing material, solid-state quantum dot-sensitized solar cells (ss-QDSSCs) were fabricated. Cadmium sulfide quantum dots (QDs) were grown in situ by successive ion layer adsorption and reaction (SILAR). Aluminum oxide recombination barrier layers were deposited by atomic layer deposition (ALD) at the TiO2/hole-conductor interface. For low numbers of ALD cycles, the Al2O3 barrier layer increased open circuit voltage, causing an increase in device efficiency. For thicker Al2O3 barrier layers, photocurrent decreased substantially, leading to a decrease in device efficiency. © 2012 IEEE.en
dc.description.sponsorshipWe would like to thank the McGehee group at Stanford forthe use of materials and equipment. This work was supportedby the Center for Advanced Molecular Photovoltaics, made bythe King Abdullah University of Science and Technology(KAUST).en
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.subjectcharge carrier lifetimeen
dc.subjectphotovoltaic cellsen
dc.subjectquantum dotsen
dc.subjectsurface engineeringen
dc.titleRecombination barrier layers in solid-state quantum dot-sensitized solar cellsen
dc.typeConference Paperen
dc.identifier.journal2012 38th IEEE Photovoltaic Specialists Conferenceen
dc.contributor.institutionStanford University, Palo Alto, United Statesen
kaust.grant.fundedcenterCenter for Advanced Molecular Photovoltaics (CAMP)en
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