Rapid Surface Oxidation as a Source of Surface Degradation Factor for Bi 2 Se 3

Handle URI:
http://hdl.handle.net/10754/599444
Title:
Rapid Surface Oxidation as a Source of Surface Degradation Factor for Bi 2 Se 3
Authors:
Kong, Desheng; Cha, Judy J.; Lai, Keji; Peng, Hailin; Analytis, James G.; Meister, Stefan; Chen, Yulin; Zhang, Hai-Jun; Fisher, Ian R.; Shen, Zhi-Xun; Cui, Yi
Abstract:
Bismuth selenide (Bi2Se3) is a topological insulator with metallic surface states (SS) residing in a large bulk bandgap. In experiments, synthesized Bi2Se3 is often heavily n-type doped due to selenium vacancies. Furthermore, it is discovered from experiments on bulk single crystals that Bi2Se3 gets additional n-type doping after exposure to the atmosphere, thereby reducing the relative contribution of SS in total conductivity. In this article, transport measurements on Bi2Se3 nanoribbons provide additional evidence of such environmental doping process. Systematic surface composition analyses by X-ray photoelectron spectroscopy reveal fast formation and continuous growth of native oxide on Bi2Se3 under ambient conditions. In addition to n-type doping at the surface, such surface oxidation is likely the material origin of the degradation of topological SS. Appropriate surface passivation or encapsulation may be required to probe topological SS of Bi2Se3 by transport measurements. © 2011 American Chemical Society.
Citation:
Kong D, Cha JJ, Lai K, Peng H, Analytis JG, et al. (2011) Rapid Surface Oxidation as a Source of Surface Degradation Factor for Bi 2 Se 3 . ACS Nano 5: 4698–4703. Available: http://dx.doi.org/10.1021/nn200556h.
Publisher:
American Chemical Society (ACS)
Journal:
ACS Nano
KAUST Grant Number:
KUS-I1-001-12; KLIS-F1-033-02
Issue Date:
28-Jun-2011
DOI:
10.1021/nn200556h
PubMed ID:
21568290
Type:
Article
ISSN:
1936-0851; 1936-086X
Sponsors:
Y.C. acknowledges the supported from the Keck Foundation and King Abdullah University of Science and Technology (KAUST) Investigator Award (No. KUS-I1-001-12). K.L. acknowledges the KAUST Postdoctoral Fellowship support No. KLIS-F1-033-02. J.G.A. and I.R.F. acknowledge support from the Department of Energy, Office of Basic Energy Sciences, under contract DE-AC02-76SF00515.
Appears in Collections:
Publications Acknowledging KAUST Support

Full metadata record

DC FieldValue Language
dc.contributor.authorKong, Deshengen
dc.contributor.authorCha, Judy J.en
dc.contributor.authorLai, Kejien
dc.contributor.authorPeng, Hailinen
dc.contributor.authorAnalytis, James G.en
dc.contributor.authorMeister, Stefanen
dc.contributor.authorChen, Yulinen
dc.contributor.authorZhang, Hai-Junen
dc.contributor.authorFisher, Ian R.en
dc.contributor.authorShen, Zhi-Xunen
dc.contributor.authorCui, Yien
dc.date.accessioned2016-02-28T05:51:15Zen
dc.date.available2016-02-28T05:51:15Zen
dc.date.issued2011-06-28en
dc.identifier.citationKong D, Cha JJ, Lai K, Peng H, Analytis JG, et al. (2011) Rapid Surface Oxidation as a Source of Surface Degradation Factor for Bi 2 Se 3 . ACS Nano 5: 4698–4703. Available: http://dx.doi.org/10.1021/nn200556h.en
dc.identifier.issn1936-0851en
dc.identifier.issn1936-086Xen
dc.identifier.pmid21568290en
dc.identifier.doi10.1021/nn200556hen
dc.identifier.urihttp://hdl.handle.net/10754/599444en
dc.description.abstractBismuth selenide (Bi2Se3) is a topological insulator with metallic surface states (SS) residing in a large bulk bandgap. In experiments, synthesized Bi2Se3 is often heavily n-type doped due to selenium vacancies. Furthermore, it is discovered from experiments on bulk single crystals that Bi2Se3 gets additional n-type doping after exposure to the atmosphere, thereby reducing the relative contribution of SS in total conductivity. In this article, transport measurements on Bi2Se3 nanoribbons provide additional evidence of such environmental doping process. Systematic surface composition analyses by X-ray photoelectron spectroscopy reveal fast formation and continuous growth of native oxide on Bi2Se3 under ambient conditions. In addition to n-type doping at the surface, such surface oxidation is likely the material origin of the degradation of topological SS. Appropriate surface passivation or encapsulation may be required to probe topological SS of Bi2Se3 by transport measurements. © 2011 American Chemical Society.en
dc.description.sponsorshipY.C. acknowledges the supported from the Keck Foundation and King Abdullah University of Science and Technology (KAUST) Investigator Award (No. KUS-I1-001-12). K.L. acknowledges the KAUST Postdoctoral Fellowship support No. KLIS-F1-033-02. J.G.A. and I.R.F. acknowledge support from the Department of Energy, Office of Basic Energy Sciences, under contract DE-AC02-76SF00515.en
dc.publisherAmerican Chemical Society (ACS)en
dc.subjectbismuth selenideen
dc.subjectdopingen
dc.subjectnanoribbonen
dc.subjectoxidationen
dc.subjecttopological insulatoren
dc.subjecttransporten
dc.titleRapid Surface Oxidation as a Source of Surface Degradation Factor for Bi 2 Se 3en
dc.typeArticleen
dc.identifier.journalACS Nanoen
dc.contributor.institutionStanford University, Palo Alto, United Statesen
dc.contributor.institutionStanford Linear Accelerator Center, Menlo Park, United Statesen
dc.contributor.institutionCollege of Chemistry and Molecular Engineering, Peking University, Beijing, Chinaen
kaust.grant.numberKUS-I1-001-12en
kaust.grant.numberKLIS-F1-033-02en

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