Pulsed Laser Annealing of Thin Films of Self-Assembled Nanocrystals

Handle URI:
http://hdl.handle.net/10754/599415
Title:
Pulsed Laser Annealing of Thin Films of Self-Assembled Nanocrystals
Authors:
Baumgardner, William J.; Choi, Joshua J.; Bian, Kaifu; Fitting Kourkoutis, Lena; Smilgies, Detlef-M.; Thompson, Michael O.; Hanrath, Tobias
Abstract:
We investigated how pulsed laser annealing can be applied to process thin films of colloidal nanocrystals (NCs) into interconnected nanostructures. We illustrate the relationship between incident laser fluence and changes in morphology of PbSe NC films relative to bulk-like PbSe films. We found that laser pulse fluences in the range of 30 to 200 mJ/cm2 create a processing window of opportunity where the NC film morphology goes through interesting transformations without large-scale coalescence of the NCs. NC coalescence can be mitigated by depositing a thin film of amorphous silicon (a-Si) on the NC film. Remarkably, pulsed laser annealing of the a-Si/PbSe NC films crystallized the silicon while NC morphology and translational order of the NC film are preserved. © 2011 American Chemical Society.
Citation:
Baumgardner WJ, Choi JJ, Bian K, Fitting Kourkoutis L, Smilgies D-M, et al. (2011) Pulsed Laser Annealing of Thin Films of Self-Assembled Nanocrystals. ACS Nano 5: 7010–7019. Available: http://dx.doi.org/10.1021/nn201588p.
Publisher:
American Chemical Society (ACS)
Journal:
ACS Nano
KAUST Grant Number:
KUS-C1-018-02
Issue Date:
27-Sep-2011
DOI:
10.1021/nn201588p
PubMed ID:
21800845
Type:
Article
ISSN:
1936-0851; 1936-086X
Sponsors:
We thank Jan Koenig for providing bulk PbSe thin film samples. W.B. was supported by Award No. KUS-C1-018-02, made by King Abdullah University of Science and Technology (KAUST). K.B. was supported by NSF-CBET 0828703. J.J.C. was supported by the NSF IGERT Fellowship Program on "Nanoscale Control of Surfaces and Interfaces," administered by Cornell's MRSEC. We also acknowledge the Cornell Center for Materials Science (NSF DMR-0520404) and the Cornell High Energy Synchrotron Source (NSF DMR-09262384).
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Full metadata record

DC FieldValue Language
dc.contributor.authorBaumgardner, William J.en
dc.contributor.authorChoi, Joshua J.en
dc.contributor.authorBian, Kaifuen
dc.contributor.authorFitting Kourkoutis, Lenaen
dc.contributor.authorSmilgies, Detlef-M.en
dc.contributor.authorThompson, Michael O.en
dc.contributor.authorHanrath, Tobiasen
dc.date.accessioned2016-02-28T05:50:42Zen
dc.date.available2016-02-28T05:50:42Zen
dc.date.issued2011-09-27en
dc.identifier.citationBaumgardner WJ, Choi JJ, Bian K, Fitting Kourkoutis L, Smilgies D-M, et al. (2011) Pulsed Laser Annealing of Thin Films of Self-Assembled Nanocrystals. ACS Nano 5: 7010–7019. Available: http://dx.doi.org/10.1021/nn201588p.en
dc.identifier.issn1936-0851en
dc.identifier.issn1936-086Xen
dc.identifier.pmid21800845en
dc.identifier.doi10.1021/nn201588pen
dc.identifier.urihttp://hdl.handle.net/10754/599415en
dc.description.abstractWe investigated how pulsed laser annealing can be applied to process thin films of colloidal nanocrystals (NCs) into interconnected nanostructures. We illustrate the relationship between incident laser fluence and changes in morphology of PbSe NC films relative to bulk-like PbSe films. We found that laser pulse fluences in the range of 30 to 200 mJ/cm2 create a processing window of opportunity where the NC film morphology goes through interesting transformations without large-scale coalescence of the NCs. NC coalescence can be mitigated by depositing a thin film of amorphous silicon (a-Si) on the NC film. Remarkably, pulsed laser annealing of the a-Si/PbSe NC films crystallized the silicon while NC morphology and translational order of the NC film are preserved. © 2011 American Chemical Society.en
dc.description.sponsorshipWe thank Jan Koenig for providing bulk PbSe thin film samples. W.B. was supported by Award No. KUS-C1-018-02, made by King Abdullah University of Science and Technology (KAUST). K.B. was supported by NSF-CBET 0828703. J.J.C. was supported by the NSF IGERT Fellowship Program on "Nanoscale Control of Surfaces and Interfaces," administered by Cornell's MRSEC. We also acknowledge the Cornell Center for Materials Science (NSF DMR-0520404) and the Cornell High Energy Synchrotron Source (NSF DMR-09262384).en
dc.publisherAmerican Chemical Society (ACS)en
dc.subjectlaser annealingen
dc.subjectnanocrystalsen
dc.subjectquantum confinementen
dc.subjectthin filmsen
dc.titlePulsed Laser Annealing of Thin Films of Self-Assembled Nanocrystalsen
dc.typeArticleen
dc.identifier.journalACS Nanoen
dc.contributor.institutionCornell University, Ithaca, United Statesen
kaust.grant.numberKUS-C1-018-02en

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