Probing the electrical properties of highly-doped Al:ZnO nanowire ensembles

Handle URI:
http://hdl.handle.net/10754/599407
Title:
Probing the electrical properties of highly-doped Al:ZnO nanowire ensembles
Authors:
Noriega, Rodrigo; Rivnay, Jonathan; Goris, Ludwig; Kälblein, Daniel; Klauk, Hagen; Kern, Klaus; Thompson, Linda M.; Palke, Aaron C.; Stebbins, Jonathan F.; Jokisaari, Jacob R.; Kusinski, Greg; Salleo, Alberto
Abstract:
The analysis of transparent conducting oxide nanostructures suffers from a lack of high throughput yet quantitatively sensitive set of analytical techniques that can properly assess their electrical properties and serve both as characterization and diagnosis tools. This is addressed by applying a comprehensive set of characterization techniques to study the electrical properties of solution-grown Al-doped ZnO nanowires as a function of composition from 0 to 4 at. % Al:Zn. Carrier mobility and charge density extracted from sensitive optical absorption measurements are in agreement with those extracted from single-wire field-effect transistor devices. The mobility in undoped nanowires is 28 cm2 /V s and decreases to ∼14 cm2 /V s at the highest doping density, though the carrier density remains approximately constant (1020 cm-3) due to limited dopant activation or the creation of charge-compensating defects. Additionally, the local geometry of the Al dopant is studied by nuclear magnetic resonance, showing the occupation of a variety of dopant sites. © 2010 American Institute of Physics.
Citation:
Noriega R, Rivnay J, Goris L, Kälblein D, Klauk H, et al. (2010) Probing the electrical properties of highly-doped Al:ZnO nanowire ensembles. Journal of Applied Physics 107: 074312. Available: http://dx.doi.org/10.1063/1.3360930.
Publisher:
AIP Publishing
Journal:
Journal of Applied Physics
Issue Date:
2010
DOI:
10.1063/1.3360930
Type:
Article
ISSN:
0021-8979
Sponsors:
This research was supported by the King Abdullah University of Science and Technology (KAUST) : Global Research Partnership (GRP) through the Center for Advanced Molecular Photovoltaics (CAMP), the Global Climate and Energy Project (GCEP) through Stanford University and the Department of Energy (Solar America Initiative). We thank Ted Trigg for his collaboration and Craig H. Peters for helpful discussions in preparing this manuscript.
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Full metadata record

DC FieldValue Language
dc.contributor.authorNoriega, Rodrigoen
dc.contributor.authorRivnay, Jonathanen
dc.contributor.authorGoris, Ludwigen
dc.contributor.authorKälblein, Danielen
dc.contributor.authorKlauk, Hagenen
dc.contributor.authorKern, Klausen
dc.contributor.authorThompson, Linda M.en
dc.contributor.authorPalke, Aaron C.en
dc.contributor.authorStebbins, Jonathan F.en
dc.contributor.authorJokisaari, Jacob R.en
dc.contributor.authorKusinski, Gregen
dc.contributor.authorSalleo, Albertoen
dc.date.accessioned2016-02-28T05:50:33Zen
dc.date.available2016-02-28T05:50:33Zen
dc.date.issued2010en
dc.identifier.citationNoriega R, Rivnay J, Goris L, Kälblein D, Klauk H, et al. (2010) Probing the electrical properties of highly-doped Al:ZnO nanowire ensembles. Journal of Applied Physics 107: 074312. Available: http://dx.doi.org/10.1063/1.3360930.en
dc.identifier.issn0021-8979en
dc.identifier.doi10.1063/1.3360930en
dc.identifier.urihttp://hdl.handle.net/10754/599407en
dc.description.abstractThe analysis of transparent conducting oxide nanostructures suffers from a lack of high throughput yet quantitatively sensitive set of analytical techniques that can properly assess their electrical properties and serve both as characterization and diagnosis tools. This is addressed by applying a comprehensive set of characterization techniques to study the electrical properties of solution-grown Al-doped ZnO nanowires as a function of composition from 0 to 4 at. % Al:Zn. Carrier mobility and charge density extracted from sensitive optical absorption measurements are in agreement with those extracted from single-wire field-effect transistor devices. The mobility in undoped nanowires is 28 cm2 /V s and decreases to ∼14 cm2 /V s at the highest doping density, though the carrier density remains approximately constant (1020 cm-3) due to limited dopant activation or the creation of charge-compensating defects. Additionally, the local geometry of the Al dopant is studied by nuclear magnetic resonance, showing the occupation of a variety of dopant sites. © 2010 American Institute of Physics.en
dc.description.sponsorshipThis research was supported by the King Abdullah University of Science and Technology (KAUST) : Global Research Partnership (GRP) through the Center for Advanced Molecular Photovoltaics (CAMP), the Global Climate and Energy Project (GCEP) through Stanford University and the Department of Energy (Solar America Initiative). We thank Ted Trigg for his collaboration and Craig H. Peters for helpful discussions in preparing this manuscript.en
dc.publisherAIP Publishingen
dc.titleProbing the electrical properties of highly-doped Al:ZnO nanowire ensemblesen
dc.typeArticleen
dc.identifier.journalJournal of Applied Physicsen
dc.contributor.institutionStanford University, Palo Alto, United Statesen
dc.contributor.institutionMax Planck Institute for Solid State Research, Stuttgart, Germanyen
dc.contributor.institutionEcole Polytechnique Federale de Lausanne, Lausanne, Switzerlanden
dc.contributor.institutionClemson University, Clemson, United Statesen
kaust.grant.fundedcenterCenter for Advanced Molecular Photovoltaics (CAMP)en
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