Planar self-aligned imprint lithography for coplanar plasmonic nanostructures fabrication

Handle URI:
http://hdl.handle.net/10754/599199
Title:
Planar self-aligned imprint lithography for coplanar plasmonic nanostructures fabrication
Authors:
Wan, Weiwei; Lin, Liang; Xu, Yelong; Guo, Xu; Liu, Xiaoping; Ge, Haixiong; Lu, Minghui; Cui, Bo; Chen, Yanfeng
Abstract:
Nanoimprint lithography (NIL) is a cost-efficient nanopatterning technology because of its promising advantages of high throughput and high resolution. However, accurate multilevel overlay capability of NIL required for integrated circuit manufacturing remains a challenge due to the high cost of achieving mechanical alignment precision. Although self-aligned imprint lithography was developed to avoid the need of alignment for the vertical layered structures, it has limited usage in the manufacture of the coplanar structures, such as integrated plasmonic devices. In this paper, we develop a new process of planar self-alignment imprint lithography (P-SAIL) to fabricate the metallic and dielectric structures on the same plane. P-SAIL transfers the multilevel imprint processes to a single-imprint process which offers higher efficiency and less cost than existing manufacturing methods. Such concept is demonstrated in an example of fabricating planar plasmonic structures consisting of different materials. © 2014 Springer-Verlag Berlin Heidelberg.
Citation:
Wan W, Lin L, Xu Y, Guo X, Liu X, et al. (2014) Planar self-aligned imprint lithography for coplanar plasmonic nanostructures fabrication. Applied Physics A 116: 657–662. Available: http://dx.doi.org/10.1007/s00339-014-8323-5.
Publisher:
Springer Nature
Journal:
Applied Physics A
Issue Date:
1-Mar-2014
DOI:
10.1007/s00339-014-8323-5
Type:
Article
ISSN:
0947-8396; 1432-0630
Sponsors:
The work was jointly supported by the National Basic Research Program of China (Grant Nos. 2012CB921503 and 2013CB632702) and the National Natural Science Foundation of China (Grant No. 11134006). We also acknowledge the Academic Development Program of Jiangsu Higher Education (PAPD) and KAUST Baseline Research Funds.
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Full metadata record

DC FieldValue Language
dc.contributor.authorWan, Weiweien
dc.contributor.authorLin, Liangen
dc.contributor.authorXu, Yelongen
dc.contributor.authorGuo, Xuen
dc.contributor.authorLiu, Xiaopingen
dc.contributor.authorGe, Haixiongen
dc.contributor.authorLu, Minghuien
dc.contributor.authorCui, Boen
dc.contributor.authorChen, Yanfengen
dc.date.accessioned2016-02-25T13:54:45Zen
dc.date.available2016-02-25T13:54:45Zen
dc.date.issued2014-03-01en
dc.identifier.citationWan W, Lin L, Xu Y, Guo X, Liu X, et al. (2014) Planar self-aligned imprint lithography for coplanar plasmonic nanostructures fabrication. Applied Physics A 116: 657–662. Available: http://dx.doi.org/10.1007/s00339-014-8323-5.en
dc.identifier.issn0947-8396en
dc.identifier.issn1432-0630en
dc.identifier.doi10.1007/s00339-014-8323-5en
dc.identifier.urihttp://hdl.handle.net/10754/599199en
dc.description.abstractNanoimprint lithography (NIL) is a cost-efficient nanopatterning technology because of its promising advantages of high throughput and high resolution. However, accurate multilevel overlay capability of NIL required for integrated circuit manufacturing remains a challenge due to the high cost of achieving mechanical alignment precision. Although self-aligned imprint lithography was developed to avoid the need of alignment for the vertical layered structures, it has limited usage in the manufacture of the coplanar structures, such as integrated plasmonic devices. In this paper, we develop a new process of planar self-alignment imprint lithography (P-SAIL) to fabricate the metallic and dielectric structures on the same plane. P-SAIL transfers the multilevel imprint processes to a single-imprint process which offers higher efficiency and less cost than existing manufacturing methods. Such concept is demonstrated in an example of fabricating planar plasmonic structures consisting of different materials. © 2014 Springer-Verlag Berlin Heidelberg.en
dc.description.sponsorshipThe work was jointly supported by the National Basic Research Program of China (Grant Nos. 2012CB921503 and 2013CB632702) and the National Natural Science Foundation of China (Grant No. 11134006). We also acknowledge the Academic Development Program of Jiangsu Higher Education (PAPD) and KAUST Baseline Research Funds.en
dc.publisherSpringer Natureen
dc.titlePlanar self-aligned imprint lithography for coplanar plasmonic nanostructures fabricationen
dc.typeArticleen
dc.identifier.journalApplied Physics Aen
dc.contributor.institutionNanjing University, Nanjing, Chinaen
dc.contributor.institutionUniversity of Waterloo, Waterloo, Canadaen
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