Piezopotential gated nanowire devices: Piezotronics and piezo-phototronics

Handle URI:
http://hdl.handle.net/10754/599194
Title:
Piezopotential gated nanowire devices: Piezotronics and piezo-phototronics
Authors:
Wang, Zhong Lin
Abstract:
Due to the polarization of ions in a crystal that has non-central symmetry, a piezoelectric potential (piezopotential) is created in the crystal by applying a stress. For materials such as ZnO, GaN, and InN in the wurtzite structure family, the effect of piezopotential on the transport behavior of charge carriers is significant due to their multiple functionalities of piezoelectricity, semiconductor and photon excitation. By utilizing the advantages offered by these properties, a few new fields have been created. Electronics fabricated by using inner-crystal piezopotential as a "gate" voltage to tune/control the charge transport behavior is named piezotronics, with applications in strain/force/pressure triggered/controlled electronic devices, sensors and logic units. Piezo-phototronic effect is a result of three-way coupling among piezoelectricity, photonic excitation and semiconductor transport, which allows tuning and controlling of electro-optical processes by strain induced piezopotential. The objective of this review article is to introduce the fundamentals of piezotronics and piezo-phototronics and to give an updated progress about their applications in energy science and sensors. © 2010 Elsevier Ltd All rights reserved.
Citation:
Wang ZL (2010) Piezopotential gated nanowire devices: Piezotronics and piezo-phototronics. Nano Today 5: 540–552. Available: http://dx.doi.org/10.1016/j.nantod.2010.10.008.
Publisher:
Elsevier BV
Journal:
Nano Today
Issue Date:
Dec-2010
DOI:
10.1016/j.nantod.2010.10.008
Type:
Article
ISSN:
1748-0132
Sponsors:
Thanks to the support from DARPA, BES DOE, NSF, Airforce, KAUST and WPI (NIMS). Thanks to Xudong Wang, Jr-Hau He, Jun Zhou, Yaguang Wei, Wenzhuo Wu, Youfan Hu, Yan Zhang, Qing Yang, Yifan Gao, Weihua Liu, Minbaek Lee, Peng Fei, and other members and collaborators for their contributions.
Appears in Collections:
Publications Acknowledging KAUST Support

Full metadata record

DC FieldValue Language
dc.contributor.authorWang, Zhong Linen
dc.date.accessioned2016-02-25T13:54:39Zen
dc.date.available2016-02-25T13:54:39Zen
dc.date.issued2010-12en
dc.identifier.citationWang ZL (2010) Piezopotential gated nanowire devices: Piezotronics and piezo-phototronics. Nano Today 5: 540–552. Available: http://dx.doi.org/10.1016/j.nantod.2010.10.008.en
dc.identifier.issn1748-0132en
dc.identifier.doi10.1016/j.nantod.2010.10.008en
dc.identifier.urihttp://hdl.handle.net/10754/599194en
dc.description.abstractDue to the polarization of ions in a crystal that has non-central symmetry, a piezoelectric potential (piezopotential) is created in the crystal by applying a stress. For materials such as ZnO, GaN, and InN in the wurtzite structure family, the effect of piezopotential on the transport behavior of charge carriers is significant due to their multiple functionalities of piezoelectricity, semiconductor and photon excitation. By utilizing the advantages offered by these properties, a few new fields have been created. Electronics fabricated by using inner-crystal piezopotential as a "gate" voltage to tune/control the charge transport behavior is named piezotronics, with applications in strain/force/pressure triggered/controlled electronic devices, sensors and logic units. Piezo-phototronic effect is a result of three-way coupling among piezoelectricity, photonic excitation and semiconductor transport, which allows tuning and controlling of electro-optical processes by strain induced piezopotential. The objective of this review article is to introduce the fundamentals of piezotronics and piezo-phototronics and to give an updated progress about their applications in energy science and sensors. © 2010 Elsevier Ltd All rights reserved.en
dc.description.sponsorshipThanks to the support from DARPA, BES DOE, NSF, Airforce, KAUST and WPI (NIMS). Thanks to Xudong Wang, Jr-Hau He, Jun Zhou, Yaguang Wei, Wenzhuo Wu, Youfan Hu, Yan Zhang, Qing Yang, Yifan Gao, Weihua Liu, Minbaek Lee, Peng Fei, and other members and collaborators for their contributions.en
dc.publisherElsevier BVen
dc.subjectNanowireen
dc.subjectPiezo-phototronicsen
dc.subjectPiezopotentialen
dc.subjectPiezotronicsen
dc.subjectZnOen
dc.titlePiezopotential gated nanowire devices: Piezotronics and piezo-phototronicsen
dc.typeArticleen
dc.identifier.journalNano Todayen
dc.contributor.institutionGeorgia Institute of Technology, Atlanta, United Statesen
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