Handle URI:
http://hdl.handle.net/10754/599182
Title:
Phosphorus Doped Zn 1- x Mg x O Nanowire Arrays
Authors:
Lin, S. S.; Hong, J. I.; Song, J. H.; Zhu, Y.; He, H. P.; Xu, Z.; Wei, Y. G.; Ding, Y.; Snyder, R. L.; Wang, Z. L.
Abstract:
We demonstrate the growth of phosphorus doped Zn 1-xMg xO nanowire (NW) using pulsed laser deposition. For the first time, p-type Zn 0.92Mg 0.08O:P NWs are likely obtained In reference to atomic force microscopy based piezoelectric output measurements, X-ray photoelectron spectroscopy, and the transport property between the NWs and a n-type ZnO film. A shallow acceptor level of ∼140 meV Is identified by temperaturedependent photoluminescence. A piezoelectric output of 60 mV on average has been received using the doped NWs. Besides a control on NW aspect ratio and density, band gap engineering has also been achieved by alloying with Mg to a content of x = 0.23. The alloyed NWs with controllable conductivity type have potential application In high-efficiency all-ZnO NWs based LED, high-output ZnO nanogenerator, and other optical or electrical devices. © 2009 American Chemical Society.
Citation:
Lin SS, Hong JI, Song JH, Zhu Y, He HP, et al. (2009) Phosphorus Doped Zn 1- x Mg x O Nanowire Arrays . Nano Lett 9: 3877–3882. Available: http://dx.doi.org/10.1021/nl902067a.
Publisher:
American Chemical Society (ACS)
Journal:
Nano Letters
Issue Date:
11-Nov-2009
DOI:
10.1021/nl902067a
PubMed ID:
19757858
Type:
Article
ISSN:
1530-6984; 1530-6992
Sponsors:
The authors thank J. X. Wu for assistance of valence-band X-ray photoelectron spectroscopy tests and X. Q. Gu for assistance of the temperature-dependent photoluminescence measurements. This research was supported by DARPA (Army/AMOCOM/REDSTONE AR, W31P4Q-08-1-0009), BESDOE (DE-FG-02-07ER46394), Air Force Office (FA9550-08-1-0046), DARPA/ARO W911NF-08-1-0249, KAUST Global Research Partnership. S.S.L. thanks the partial fellowship supported by the China Scholarship Council (CSC) (No. 20083019).
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Full metadata record

DC FieldValue Language
dc.contributor.authorLin, S. S.en
dc.contributor.authorHong, J. I.en
dc.contributor.authorSong, J. H.en
dc.contributor.authorZhu, Y.en
dc.contributor.authorHe, H. P.en
dc.contributor.authorXu, Z.en
dc.contributor.authorWei, Y. G.en
dc.contributor.authorDing, Y.en
dc.contributor.authorSnyder, R. L.en
dc.contributor.authorWang, Z. L.en
dc.date.accessioned2016-02-25T13:54:26Zen
dc.date.available2016-02-25T13:54:26Zen
dc.date.issued2009-11-11en
dc.identifier.citationLin SS, Hong JI, Song JH, Zhu Y, He HP, et al. (2009) Phosphorus Doped Zn 1- x Mg x O Nanowire Arrays . Nano Lett 9: 3877–3882. Available: http://dx.doi.org/10.1021/nl902067a.en
dc.identifier.issn1530-6984en
dc.identifier.issn1530-6992en
dc.identifier.pmid19757858en
dc.identifier.doi10.1021/nl902067aen
dc.identifier.urihttp://hdl.handle.net/10754/599182en
dc.description.abstractWe demonstrate the growth of phosphorus doped Zn 1-xMg xO nanowire (NW) using pulsed laser deposition. For the first time, p-type Zn 0.92Mg 0.08O:P NWs are likely obtained In reference to atomic force microscopy based piezoelectric output measurements, X-ray photoelectron spectroscopy, and the transport property between the NWs and a n-type ZnO film. A shallow acceptor level of ∼140 meV Is identified by temperaturedependent photoluminescence. A piezoelectric output of 60 mV on average has been received using the doped NWs. Besides a control on NW aspect ratio and density, band gap engineering has also been achieved by alloying with Mg to a content of x = 0.23. The alloyed NWs with controllable conductivity type have potential application In high-efficiency all-ZnO NWs based LED, high-output ZnO nanogenerator, and other optical or electrical devices. © 2009 American Chemical Society.en
dc.description.sponsorshipThe authors thank J. X. Wu for assistance of valence-band X-ray photoelectron spectroscopy tests and X. Q. Gu for assistance of the temperature-dependent photoluminescence measurements. This research was supported by DARPA (Army/AMOCOM/REDSTONE AR, W31P4Q-08-1-0009), BESDOE (DE-FG-02-07ER46394), Air Force Office (FA9550-08-1-0046), DARPA/ARO W911NF-08-1-0249, KAUST Global Research Partnership. S.S.L. thanks the partial fellowship supported by the China Scholarship Council (CSC) (No. 20083019).en
dc.publisherAmerican Chemical Society (ACS)en
dc.titlePhosphorus Doped Zn 1- x Mg x O Nanowire Arraysen
dc.typeArticleen
dc.identifier.journalNano Lettersen
dc.contributor.institutionGeorgia Institute of Technology, Atlanta, United Statesen
dc.contributor.institutionState Key Laboratory of Silicon Material Science, Hangzhou, Chinaen

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