Handle URI:
http://hdl.handle.net/10754/599170
Title:
Perovskite Thin Films via Atomic Layer Deposition
Authors:
Sutherland, Brandon R.; Hoogland, Sjoerd; Adachi, Michael M.; Kanjanaboos, Pongsakorn; Wong, Chris T. O.; McDowell, Jeffrey J.; Xu, Jixian; Voznyy, Oleksandr; Ning, Zhijun; Houtepen, Arjan J.; Sargent, Edward H.
Abstract:
© 2014 Wiley-VCH Verlag GmbH & Co. KGaA. (Graph Presented) A new method to deposit perovskite thin films that benefit from the thickness control and conformality of atomic layer deposition (ALD) is detailed. A seed layer of ALD PbS is place-exchanged with PbI2 and subsequently CH3NH3PbI3 perovskite. These films show promising optical properties, with gain coefficients of 3200 ± 830 cm-1.
Citation:
Sutherland BR, Hoogland S, Adachi MM, Kanjanaboos P, Wong CTO, et al. (2014) Perovskite Thin Films via Atomic Layer Deposition. Advanced Materials 27: 53–58. Available: http://dx.doi.org/10.1002/adma.201403965.
Publisher:
Wiley-Blackwell
Journal:
Advanced Materials
KAUST Grant Number:
KUS-11-009-21
Issue Date:
30-Oct-2014
DOI:
10.1002/adma.201403965
PubMed ID:
25359103
Type:
Article
ISSN:
0935-9648
Sponsors:
This publication is based in part on work supported by an award (KUS-11-009-21) from the King Abdullah University of Science and Technology (KAUST), by the Ontario Research Fund Research Excellence Program and by the Natural Sciences and Engineering Research Council (NSERC) of Canada. The authors thank Cambridge Nanotech, Fritz Prinz, and Orlando Trejo for their advice on ALD PbS film fabrication. The authors thank L.T. Kunneman for his assistance in the data analysis of the transient absorption measurements. The authors also thank M. Yuan, H. Dong, R. Wolowiec, and D. Kopilovic for their help during the course of the study.
Appears in Collections:
Publications Acknowledging KAUST Support

Full metadata record

DC FieldValue Language
dc.contributor.authorSutherland, Brandon R.en
dc.contributor.authorHoogland, Sjoerden
dc.contributor.authorAdachi, Michael M.en
dc.contributor.authorKanjanaboos, Pongsakornen
dc.contributor.authorWong, Chris T. O.en
dc.contributor.authorMcDowell, Jeffrey J.en
dc.contributor.authorXu, Jixianen
dc.contributor.authorVoznyy, Oleksandren
dc.contributor.authorNing, Zhijunen
dc.contributor.authorHoutepen, Arjan J.en
dc.contributor.authorSargent, Edward H.en
dc.date.accessioned2016-02-25T13:54:12Zen
dc.date.available2016-02-25T13:54:12Zen
dc.date.issued2014-10-30en
dc.identifier.citationSutherland BR, Hoogland S, Adachi MM, Kanjanaboos P, Wong CTO, et al. (2014) Perovskite Thin Films via Atomic Layer Deposition. Advanced Materials 27: 53–58. Available: http://dx.doi.org/10.1002/adma.201403965.en
dc.identifier.issn0935-9648en
dc.identifier.pmid25359103en
dc.identifier.doi10.1002/adma.201403965en
dc.identifier.urihttp://hdl.handle.net/10754/599170en
dc.description.abstract© 2014 Wiley-VCH Verlag GmbH & Co. KGaA. (Graph Presented) A new method to deposit perovskite thin films that benefit from the thickness control and conformality of atomic layer deposition (ALD) is detailed. A seed layer of ALD PbS is place-exchanged with PbI2 and subsequently CH3NH3PbI3 perovskite. These films show promising optical properties, with gain coefficients of 3200 ± 830 cm-1.en
dc.description.sponsorshipThis publication is based in part on work supported by an award (KUS-11-009-21) from the King Abdullah University of Science and Technology (KAUST), by the Ontario Research Fund Research Excellence Program and by the Natural Sciences and Engineering Research Council (NSERC) of Canada. The authors thank Cambridge Nanotech, Fritz Prinz, and Orlando Trejo for their advice on ALD PbS film fabrication. The authors thank L.T. Kunneman for his assistance in the data analysis of the transient absorption measurements. The authors also thank M. Yuan, H. Dong, R. Wolowiec, and D. Kopilovic for their help during the course of the study.en
dc.publisherWiley-Blackwellen
dc.subjectAtomic layer depositionen
dc.subjectOptical gainen
dc.subjectPerovskitesen
dc.subjectTransient absorptionen
dc.titlePerovskite Thin Films via Atomic Layer Depositionen
dc.typeArticleen
dc.identifier.journalAdvanced Materialsen
dc.contributor.institutionDepartment of Electrical and Computer Engineering; University of Toronto; 10 King's College Road Toronto Ontario M5S 3G4 Canadaen
dc.contributor.institutionDepartment of Chemical Engineering; Delft University of Technology; Julianalaan 136 2628 BL Delft The Netherlandsen
kaust.grant.numberKUS-11-009-21en

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