Oxide nanoparticle EUV resists: toward understanding the mechanism of positive and negative tone patterning

Handle URI:
http://hdl.handle.net/10754/599125
Title:
Oxide nanoparticle EUV resists: toward understanding the mechanism of positive and negative tone patterning
Authors:
Chakrabarty, Souvik; Ouyang, Christine; Krysak, Marie; Trikeriotis, Markos; Cho, Kyoungyoung; Giannelis, Emmanuel P.; Ober, Christopher K.
Abstract:
DUV, EUV and e-beam patterning of hybrid nanoparticle photoresists have been reported previously by Ober and coworkers. The present work explores the underlying mechanism that is responsible for the dual tone patterning capability of these photoresist materials. Spectroscopic results correlated with mass loss and dissolution studies suggest a ligand exchange mechanism responsible for altering the solubility between the exposed and unexposed regions. © 2013 SPIE.
Citation:
Chakrabarty S, Ouyang C, Krysak M, Trikeriotis M, Cho K, et al. (2013) Oxide nanoparticle EUV resists: toward understanding the mechanism of positive and negative tone patterning. Extreme Ultraviolet (EUV) Lithography IV. Available: http://dx.doi.org/10.1117/12.2011490.
Publisher:
SPIE-Intl Soc Optical Eng
Journal:
Extreme Ultraviolet (EUV) Lithography IV
Issue Date:
1-Apr-2013
DOI:
10.1117/12.2011490
Type:
Conference Paper
Sponsors:
The authors gratefully acknowledge SEMATECH for funding, as well as the Cornell Nanoscale Science and TechnologyFacility (CNF), Cornell Center of Materials Research (CCMR), the Nanobiotechnology Center (NBTC) and theKAUST-Cornell Center of Energy and Sustainability (KAUST_CU) for use of their facilities.
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Publications Acknowledging KAUST Support

Full metadata record

DC FieldValue Language
dc.contributor.authorChakrabarty, Souviken
dc.contributor.authorOuyang, Christineen
dc.contributor.authorKrysak, Marieen
dc.contributor.authorTrikeriotis, Markosen
dc.contributor.authorCho, Kyoungyoungen
dc.contributor.authorGiannelis, Emmanuel P.en
dc.contributor.authorOber, Christopher K.en
dc.date.accessioned2016-02-25T13:53:20Zen
dc.date.available2016-02-25T13:53:20Zen
dc.date.issued2013-04-01en
dc.identifier.citationChakrabarty S, Ouyang C, Krysak M, Trikeriotis M, Cho K, et al. (2013) Oxide nanoparticle EUV resists: toward understanding the mechanism of positive and negative tone patterning. Extreme Ultraviolet (EUV) Lithography IV. Available: http://dx.doi.org/10.1117/12.2011490.en
dc.identifier.doi10.1117/12.2011490en
dc.identifier.urihttp://hdl.handle.net/10754/599125en
dc.description.abstractDUV, EUV and e-beam patterning of hybrid nanoparticle photoresists have been reported previously by Ober and coworkers. The present work explores the underlying mechanism that is responsible for the dual tone patterning capability of these photoresist materials. Spectroscopic results correlated with mass loss and dissolution studies suggest a ligand exchange mechanism responsible for altering the solubility between the exposed and unexposed regions. © 2013 SPIE.en
dc.description.sponsorshipThe authors gratefully acknowledge SEMATECH for funding, as well as the Cornell Nanoscale Science and TechnologyFacility (CNF), Cornell Center of Materials Research (CCMR), the Nanobiotechnology Center (NBTC) and theKAUST-Cornell Center of Energy and Sustainability (KAUST_CU) for use of their facilities.en
dc.publisherSPIE-Intl Soc Optical Engen
dc.subjectDual toneen
dc.subjectEUVen
dc.subjectLithographyen
dc.subjectMetal oxideen
dc.subjectNanoparticle photoresisten
dc.subjectPatterning mechanismen
dc.titleOxide nanoparticle EUV resists: toward understanding the mechanism of positive and negative tone patterningen
dc.typeConference Paperen
dc.identifier.journalExtreme Ultraviolet (EUV) Lithography IVen
dc.contributor.institutionCornell University, Ithaca, United Statesen
dc.contributor.institutionSEMATECH Austin, Austin, United Statesen
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