Oxide Nanoparticle EUV (ONE) Photoresists: Current Understanding of the Unusual Patterning Mechanism

Handle URI:
http://hdl.handle.net/10754/599124
Title:
Oxide Nanoparticle EUV (ONE) Photoresists: Current Understanding of the Unusual Patterning Mechanism
Authors:
Jiang, Jing; Zhang, Ben; Yu, Mufei; Li, Li; Neisser, Mark; Sung Chun, Jun; Giannelis, Emmanuel P.; Ober, Christopher K.
Abstract:
© 2015 SPST. In the past few years, industry has made significant progress to deliver a stable high power EUV scanner and a 100 W light source is now being tested on the manufacuring scale. The success of a high power EUV source demands a fast and high resolution EUV resist. However, chemcially amplied resists encounter unprecedented challenges beyond the 22 nm node due to resolution, roughness and sensitivity tradeoffs. Unless novel solutions for EUV resists are proposed and further optimzed, breakthroughs can hardly be achieved. Oxide nanoparticle EUV (ONE) resists stablized by organic ligands were originally proposed by Ober et al. Recently this work attracts more and more attention due to its extraordinanry EUV sensitivity. This new class of photoresist utilizes ligand cleavage with a ligand exchange mechanism to switch its solubilty for dual-tone patterning. Therefore, ligand selection of the nanoparticles is extremely important to its EUV performance.
Citation:
Jiang J, Zhang B, Yu M, Li L, Neisser M, et al. (2015) Oxide Nanoparticle EUV (ONE) Photoresists: Current Understanding of the Unusual Patterning Mechanism. Journal of Photopolymer Science and Technology 28: 515–518. Available: http://dx.doi.org/10.2494/photopolymer.28.515.
Publisher:
Technical Association of Photopolymers, Japan
Journal:
Journal of Photopolymer Science and Technology
Issue Date:
2015
DOI:
10.2494/photopolymer.28.515
Type:
Article
ISSN:
0914-9244; 1349-6336
Sponsors:
The authors gratefully acknowledge SEMATECH for funding, as well as the Cornell Nanoscale Science and Technology Facility (CNF), Cornell Center of Materials Research (CCMR), the KAUST-Cornell Center of Energy and Sustainability (KAUST_CU) and Lawrence Berkeley National Lab (LBNL) for use of their facilities.
Appears in Collections:
Publications Acknowledging KAUST Support

Full metadata record

DC FieldValue Language
dc.contributor.authorJiang, Jingen
dc.contributor.authorZhang, Benen
dc.contributor.authorYu, Mufeien
dc.contributor.authorLi, Lien
dc.contributor.authorNeisser, Marken
dc.contributor.authorSung Chun, Junen
dc.contributor.authorGiannelis, Emmanuel P.en
dc.contributor.authorOber, Christopher K.en
dc.date.accessioned2016-02-25T13:53:19Zen
dc.date.available2016-02-25T13:53:19Zen
dc.date.issued2015en
dc.identifier.citationJiang J, Zhang B, Yu M, Li L, Neisser M, et al. (2015) Oxide Nanoparticle EUV (ONE) Photoresists: Current Understanding of the Unusual Patterning Mechanism. Journal of Photopolymer Science and Technology 28: 515–518. Available: http://dx.doi.org/10.2494/photopolymer.28.515.en
dc.identifier.issn0914-9244en
dc.identifier.issn1349-6336en
dc.identifier.doi10.2494/photopolymer.28.515en
dc.identifier.urihttp://hdl.handle.net/10754/599124en
dc.description.abstract© 2015 SPST. In the past few years, industry has made significant progress to deliver a stable high power EUV scanner and a 100 W light source is now being tested on the manufacuring scale. The success of a high power EUV source demands a fast and high resolution EUV resist. However, chemcially amplied resists encounter unprecedented challenges beyond the 22 nm node due to resolution, roughness and sensitivity tradeoffs. Unless novel solutions for EUV resists are proposed and further optimzed, breakthroughs can hardly be achieved. Oxide nanoparticle EUV (ONE) resists stablized by organic ligands were originally proposed by Ober et al. Recently this work attracts more and more attention due to its extraordinanry EUV sensitivity. This new class of photoresist utilizes ligand cleavage with a ligand exchange mechanism to switch its solubilty for dual-tone patterning. Therefore, ligand selection of the nanoparticles is extremely important to its EUV performance.en
dc.description.sponsorshipThe authors gratefully acknowledge SEMATECH for funding, as well as the Cornell Nanoscale Science and Technology Facility (CNF), Cornell Center of Materials Research (CCMR), the KAUST-Cornell Center of Energy and Sustainability (KAUST_CU) and Lawrence Berkeley National Lab (LBNL) for use of their facilities.en
dc.publisherTechnical Association of Photopolymers, Japanen
dc.subjectEUVen
dc.subjectLigandsen
dc.subjectMetal oxideen
dc.subjectNanoparticleen
dc.subjectPhotoresisten
dc.titleOxide Nanoparticle EUV (ONE) Photoresists: Current Understanding of the Unusual Patterning Mechanismen
dc.typeArticleen
dc.identifier.journalJournal of Photopolymer Science and Technologyen
dc.contributor.institutionDepartment of Material Science and Engineering, Cornell Universityen
dc.contributor.institutionSEMATECHen
dc.contributor.institutionCNSE of SUNY at Albanyen
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