Nanoparticle Photoresists: Ligand Exchange as a New, Sensitive EUV Patterning Mechanism

Handle URI:
http://hdl.handle.net/10754/598941
Title:
Nanoparticle Photoresists: Ligand Exchange as a New, Sensitive EUV Patterning Mechanism
Authors:
Kryask, Marie; Trikeriotis, Markos; Ouyang, Christine; Chakrabarty, Sovik; Giannelis, Emmanuel P.; Ober, Christopher K.
Abstract:
Hybrid nanoparticle photoresists and their patterning using DUV, EUV, 193 nm lithography and e-beam lithography has been investigated and reported earlier. The nanoparticles have demonstrated very high EUV sensitivity and significant etch resistance compared to other standard photoresists. The current study aims at investigating and establishing the underlying mechanism for dual tone patterning of these nanoparticle photoresist systems. Infrared spectroscopy and UV absorbance studies supported by mass loss and dissolution studies support the current model. © 2013SPST.
Citation:
Kryask M, Trikeriotis M, Ouyang C, Chakrabarty S, Giannelis EP, et al. (2013) Nanoparticle Photoresists: Ligand Exchange as a New, Sensitive EUV Patterning Mechanism. Journal of Photopolymer Science and Technology 26: 659–664. Available: http://dx.doi.org/10.2494/photopolymer.26.659.
Publisher:
Technical Association of Photopolymers, Japan
Journal:
Journal of Photopolymer Science and Technology
Issue Date:
2013
DOI:
10.2494/photopolymer.26.659
Type:
Article
ISSN:
0914-9244; 1349-6336
Sponsors:
The authors gratefully acknowledge International SEMATECH for funding, as well as the Cornell Nanoscale Science and Technology Facility (CNF), Cornell Center of Materials Research (CCMR), the Nanobiotechnology Center (NBTC) and the KAUST-Cornell Center of Energy and Sustainability (KAUST-CU) for use of their facilities.Lawrence Berkeley National Laboratories was essential in our studies of EUV exposure.
Appears in Collections:
Publications Acknowledging KAUST Support

Full metadata record

DC FieldValue Language
dc.contributor.authorKryask, Marieen
dc.contributor.authorTrikeriotis, Markosen
dc.contributor.authorOuyang, Christineen
dc.contributor.authorChakrabarty, Soviken
dc.contributor.authorGiannelis, Emmanuel P.en
dc.contributor.authorOber, Christopher K.en
dc.date.accessioned2016-02-25T13:44:08Zen
dc.date.available2016-02-25T13:44:08Zen
dc.date.issued2013en
dc.identifier.citationKryask M, Trikeriotis M, Ouyang C, Chakrabarty S, Giannelis EP, et al. (2013) Nanoparticle Photoresists: Ligand Exchange as a New, Sensitive EUV Patterning Mechanism. Journal of Photopolymer Science and Technology 26: 659–664. Available: http://dx.doi.org/10.2494/photopolymer.26.659.en
dc.identifier.issn0914-9244en
dc.identifier.issn1349-6336en
dc.identifier.doi10.2494/photopolymer.26.659en
dc.identifier.urihttp://hdl.handle.net/10754/598941en
dc.description.abstractHybrid nanoparticle photoresists and their patterning using DUV, EUV, 193 nm lithography and e-beam lithography has been investigated and reported earlier. The nanoparticles have demonstrated very high EUV sensitivity and significant etch resistance compared to other standard photoresists. The current study aims at investigating and establishing the underlying mechanism for dual tone patterning of these nanoparticle photoresist systems. Infrared spectroscopy and UV absorbance studies supported by mass loss and dissolution studies support the current model. © 2013SPST.en
dc.description.sponsorshipThe authors gratefully acknowledge International SEMATECH for funding, as well as the Cornell Nanoscale Science and Technology Facility (CNF), Cornell Center of Materials Research (CCMR), the Nanobiotechnology Center (NBTC) and the KAUST-Cornell Center of Energy and Sustainability (KAUST-CU) for use of their facilities.Lawrence Berkeley National Laboratories was essential in our studies of EUV exposure.en
dc.publisherTechnical Association of Photopolymers, Japanen
dc.subjectDual tone patterningen
dc.subjectLigand exchangeen
dc.subjectLithographyen
dc.subjectNanoparticle photoresisten
dc.titleNanoparticle Photoresists: Ligand Exchange as a New, Sensitive EUV Patterning Mechanismen
dc.typeArticleen
dc.identifier.journalJournal of Photopolymer Science and Technologyen
dc.contributor.institutionCornell University, Ithaca, United Statesen
All Items in KAUST are protected by copyright, with all rights reserved, unless otherwise indicated.