Handle URI:
http://hdl.handle.net/10754/598928
Title:
N-Type Colloidal-Quantum-Dot Solids for Photovoltaics
Authors:
Zhitomirsky, David; Furukawa, Melissa; Tang, Jiang; Stadler, Philipp; Hoogland, Sjoerd; Voznyy, Oleksandr; Liu, Huan; Sargent, Edward H.
Abstract:
N-type PbS colloidal-quantum-dot (CQD) films are fabricated using a controlled halide chemical treatment, applied in an inert processing ambient environment. The new materials exhibit a mobility of 0.1 cm2 V -1 s-1. The halogen ions serve both as a passivating agent and n-dope the films via substitution at surface chalcogen sites. The majority electron concentration across the range 1016 to 1018 cm-3 is varied systematically. © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Citation:
Zhitomirsky D, Furukawa M, Tang J, Stadler P, Hoogland S, et al. (2012) N-Type Colloidal-Quantum-Dot Solids for Photovoltaics. Advanced Materials 24: 6181–6185. Available: http://dx.doi.org/10.1002/adma.201202825.
Publisher:
Wiley-Blackwell
Journal:
Advanced Materials
KAUST Grant Number:
KUS-11-009-21
Issue Date:
12-Sep-2012
DOI:
10.1002/adma.201202825
PubMed ID:
22968808
Type:
Article
ISSN:
0935-9648
Sponsors:
We thank Angstrom Engineering and Innovative Technology for useful discussions regarding material-deposition methods and control of the glovebox environment, respectively. The authors would like to acknowledge the technical assistance and scientific guidance of E. Palmiano, R. Wolowiec, and D. Kopilovic. This publication is based, in part, on work supported by Award KUS-11-009-21, made by King Abdullah University of Science and Technology (KAUST), by the Ontario Research Fund Research Excellence Program, and by the Natural Sciences and Engineering Research Council (NSERC) of Canada. D.Z. acknowledges financial support through the NSERC CGS D Scholarship.
Appears in Collections:
Publications Acknowledging KAUST Support

Full metadata record

DC FieldValue Language
dc.contributor.authorZhitomirsky, Daviden
dc.contributor.authorFurukawa, Melissaen
dc.contributor.authorTang, Jiangen
dc.contributor.authorStadler, Philippen
dc.contributor.authorHoogland, Sjoerden
dc.contributor.authorVoznyy, Oleksandren
dc.contributor.authorLiu, Huanen
dc.contributor.authorSargent, Edward H.en
dc.date.accessioned2016-02-25T13:43:54Zen
dc.date.available2016-02-25T13:43:54Zen
dc.date.issued2012-09-12en
dc.identifier.citationZhitomirsky D, Furukawa M, Tang J, Stadler P, Hoogland S, et al. (2012) N-Type Colloidal-Quantum-Dot Solids for Photovoltaics. Advanced Materials 24: 6181–6185. Available: http://dx.doi.org/10.1002/adma.201202825.en
dc.identifier.issn0935-9648en
dc.identifier.pmid22968808en
dc.identifier.doi10.1002/adma.201202825en
dc.identifier.urihttp://hdl.handle.net/10754/598928en
dc.description.abstractN-type PbS colloidal-quantum-dot (CQD) films are fabricated using a controlled halide chemical treatment, applied in an inert processing ambient environment. The new materials exhibit a mobility of 0.1 cm2 V -1 s-1. The halogen ions serve both as a passivating agent and n-dope the films via substitution at surface chalcogen sites. The majority electron concentration across the range 1016 to 1018 cm-3 is varied systematically. © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.en
dc.description.sponsorshipWe thank Angstrom Engineering and Innovative Technology for useful discussions regarding material-deposition methods and control of the glovebox environment, respectively. The authors would like to acknowledge the technical assistance and scientific guidance of E. Palmiano, R. Wolowiec, and D. Kopilovic. This publication is based, in part, on work supported by Award KUS-11-009-21, made by King Abdullah University of Science and Technology (KAUST), by the Ontario Research Fund Research Excellence Program, and by the Natural Sciences and Engineering Research Council (NSERC) of Canada. D.Z. acknowledges financial support through the NSERC CGS D Scholarship.en
dc.publisherWiley-Blackwellen
dc.subjectcolloidal quantum dotsen
dc.subjectdopingen
dc.subjectn-type materialsen
dc.subjectPbSen
dc.subjectphotovoltaicsen
dc.titleN-Type Colloidal-Quantum-Dot Solids for Photovoltaicsen
dc.typeArticleen
dc.identifier.journalAdvanced Materialsen
dc.contributor.institutionUniversity of Toronto, Toronto, Canadaen
dc.contributor.institutionWuhan National Laboratory for Optoelectronics, Wuhan, Chinaen
dc.contributor.institutionHuazhong University of Science and Technology, Wuhan, Chinaen
kaust.grant.numberKUS-11-009-21en

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