Modeling of the effect of intentionally introduced traps on hole transport in single-crystal rubrene

Handle URI:
http://hdl.handle.net/10754/598858
Title:
Modeling of the effect of intentionally introduced traps on hole transport in single-crystal rubrene
Authors:
Dacuña, Javier; Desai, Amit; Xie, Wei; Salleo, Alberto
Abstract:
Defects have been intentionally introduced in a rubrene single crystal by means of two different mechanisms: ultraviolet ozone (UVO) exposure and x-ray irradiation. A complete drift-diffusion model based on the mobility edge (ME) concept, which takes into account asymmetries and nonuniformities in the semiconductor, is used to estimate the energetic and spatial distribution of trap states. The trap distribution for pristine devices can be decomposed into two well defined regions: a shallow region ascribed to structural disorder and a deeper region ascribed to defects. UVO and x ray increase the hole trap concentration in the semiconductor with different energetic and spatial signatures. The former creates traps near the top surface in the 0.3-0.4 eV region, while the latter induces a wider distribution of traps extending from the band edge with a spatial distribution that peaks near the top and bottom interfaces. In addition to inducing hole trap states in the transport gap, both processes are shown to reduce the mobility with respect to a pristine crystal. © 2014 American Physical Society.
Citation:
Dacuña J, Desai A, Xie W, Salleo A (2014) Modeling of the effect of intentionally introduced traps on hole transport in single-crystal rubrene. Physical Review B 89. Available: http://dx.doi.org/10.1103/PhysRevB.89.245302.
Publisher:
American Physical Society (APS)
Journal:
Physical Review B
KAUST Grant Number:
KUS-C1-015-21
Issue Date:
5-Jun-2014
DOI:
10.1103/PhysRevB.89.245302
Type:
Article
ISSN:
1098-0121; 1550-235X
Sponsors:
This paper was based on work supported by the Center for Advanced Molecular Photovoltaics (Award No. KUS-C1-015-21), made by King Abdullah University of Science and Technology (KAUST). We would like to thank Professor Daniel Frisbie for providing the materials used in this work.
Appears in Collections:
Publications Acknowledging KAUST Support

Full metadata record

DC FieldValue Language
dc.contributor.authorDacuña, Javieren
dc.contributor.authorDesai, Amiten
dc.contributor.authorXie, Weien
dc.contributor.authorSalleo, Albertoen
dc.date.accessioned2016-02-25T13:42:34Zen
dc.date.available2016-02-25T13:42:34Zen
dc.date.issued2014-06-05en
dc.identifier.citationDacuña J, Desai A, Xie W, Salleo A (2014) Modeling of the effect of intentionally introduced traps on hole transport in single-crystal rubrene. Physical Review B 89. Available: http://dx.doi.org/10.1103/PhysRevB.89.245302.en
dc.identifier.issn1098-0121en
dc.identifier.issn1550-235Xen
dc.identifier.doi10.1103/PhysRevB.89.245302en
dc.identifier.urihttp://hdl.handle.net/10754/598858en
dc.description.abstractDefects have been intentionally introduced in a rubrene single crystal by means of two different mechanisms: ultraviolet ozone (UVO) exposure and x-ray irradiation. A complete drift-diffusion model based on the mobility edge (ME) concept, which takes into account asymmetries and nonuniformities in the semiconductor, is used to estimate the energetic and spatial distribution of trap states. The trap distribution for pristine devices can be decomposed into two well defined regions: a shallow region ascribed to structural disorder and a deeper region ascribed to defects. UVO and x ray increase the hole trap concentration in the semiconductor with different energetic and spatial signatures. The former creates traps near the top surface in the 0.3-0.4 eV region, while the latter induces a wider distribution of traps extending from the band edge with a spatial distribution that peaks near the top and bottom interfaces. In addition to inducing hole trap states in the transport gap, both processes are shown to reduce the mobility with respect to a pristine crystal. © 2014 American Physical Society.en
dc.description.sponsorshipThis paper was based on work supported by the Center for Advanced Molecular Photovoltaics (Award No. KUS-C1-015-21), made by King Abdullah University of Science and Technology (KAUST). We would like to thank Professor Daniel Frisbie for providing the materials used in this work.en
dc.publisherAmerican Physical Society (APS)en
dc.titleModeling of the effect of intentionally introduced traps on hole transport in single-crystal rubreneen
dc.typeArticleen
dc.identifier.journalPhysical Review Ben
dc.contributor.institutionStanford University, Palo Alto, United Statesen
dc.contributor.institutionUniversity of Minnesota Twin Cities, Minneapolis, United Statesen
kaust.grant.numberKUS-C1-015-21en
kaust.grant.fundedcenterCenter for Advanced Molecular Photovoltaics (CAMP)en
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