Mathematical Modeling of Contact Resistance in Silicon Photovoltaic Cells

Handle URI:
http://hdl.handle.net/10754/598770
Title:
Mathematical Modeling of Contact Resistance in Silicon Photovoltaic Cells
Authors:
Black, J. P.; Breward, C. J. W.; Howell, P. D.; Young, R. J. S.
Abstract:
In screen-printed silicon-crystalline solar cells, the contact resistance of a thin interfacial glass layer between the silicon and the silver electrode plays a limiting role for electron transport. We analyze a simple model for electron transport across this layer, based on the driftdiffusion equations. We utilize the size of the current/Debye length to conduct asymptotic techniques to simplify the model; we solve the model numerically to find that the effective contact resistance may be a monotonic increasing, monotonic decreasing, or nonmonotonic function of the electron flux, depending on the values of the physical parameters. © 2013 Society for Industrial and Applied Mathematics.
Citation:
Black JP, Breward CJW, Howell PD, Young RJS (2013) Mathematical Modeling of Contact Resistance in Silicon Photovoltaic Cells. SIAM Journal on Applied Mathematics 73: 1906–1925. Available: http://dx.doi.org/10.1137/130911974.
Publisher:
Society for Industrial & Applied Mathematics (SIAM)
Journal:
SIAM Journal on Applied Mathematics
KAUST Grant Number:
KUK-C1-013-04
Issue Date:
22-Oct-2013
DOI:
10.1137/130911974
Type:
Article
ISSN:
0036-1399; 1095-712X
Sponsors:
Received by the editors March 5, 2013; accepted for publication (in revised form) July 16, 2013; published electronically October 22, 2013. This work was supported by EPSRC and DuPont (UK) Ltd. through mathematics CASE award BK/10/040. This work was also partially supported by Award KUK-C1-013-04 made by King Abdullah University of Science and Technology (KAUST).
Appears in Collections:
Publications Acknowledging KAUST Support

Full metadata record

DC FieldValue Language
dc.contributor.authorBlack, J. P.en
dc.contributor.authorBreward, C. J. W.en
dc.contributor.authorHowell, P. D.en
dc.contributor.authorYoung, R. J. S.en
dc.date.accessioned2016-02-25T13:40:52Zen
dc.date.available2016-02-25T13:40:52Zen
dc.date.issued2013-10-22en
dc.identifier.citationBlack JP, Breward CJW, Howell PD, Young RJS (2013) Mathematical Modeling of Contact Resistance in Silicon Photovoltaic Cells. SIAM Journal on Applied Mathematics 73: 1906–1925. Available: http://dx.doi.org/10.1137/130911974.en
dc.identifier.issn0036-1399en
dc.identifier.issn1095-712Xen
dc.identifier.doi10.1137/130911974en
dc.identifier.urihttp://hdl.handle.net/10754/598770en
dc.description.abstractIn screen-printed silicon-crystalline solar cells, the contact resistance of a thin interfacial glass layer between the silicon and the silver electrode plays a limiting role for electron transport. We analyze a simple model for electron transport across this layer, based on the driftdiffusion equations. We utilize the size of the current/Debye length to conduct asymptotic techniques to simplify the model; we solve the model numerically to find that the effective contact resistance may be a monotonic increasing, monotonic decreasing, or nonmonotonic function of the electron flux, depending on the values of the physical parameters. © 2013 Society for Industrial and Applied Mathematics.en
dc.description.sponsorshipReceived by the editors March 5, 2013; accepted for publication (in revised form) July 16, 2013; published electronically October 22, 2013. This work was supported by EPSRC and DuPont (UK) Ltd. through mathematics CASE award BK/10/040. This work was also partially supported by Award KUK-C1-013-04 made by King Abdullah University of Science and Technology (KAUST).en
dc.publisherSociety for Industrial & Applied Mathematics (SIAM)en
dc.subjectAsymptotic analysisen
dc.subjectContact resistanceen
dc.subjectDrift diffusionen
dc.subjectElectrochemical systemsen
dc.titleMathematical Modeling of Contact Resistance in Silicon Photovoltaic Cellsen
dc.typeArticleen
dc.identifier.journalSIAM Journal on Applied Mathematicsen
dc.contributor.institutionUniversity of Oxford, Oxford, United Kingdomen
dc.contributor.institutionDuPont, Wilmington, United Statesen
kaust.grant.numberKUK-C1-013-04en
All Items in KAUST are protected by copyright, with all rights reserved, unless otherwise indicated.