Handle URI:
http://hdl.handle.net/10754/598748
Title:
Magnetic Doping and Kondo Effect in Bi 2 Se 3 Nanoribbons
Authors:
Cha, Judy J.; Williams, James R.; Kong, Desheng; Meister, Stefan; Peng, Hailin; Bestwick, Andrew J.; Gallagher, Patrick; Goldhaber-Gordon, David; Cui, Yi
Abstract:
A simple surface band structure and a large bulk band gap have allowed Bi2Se3 to become a reference material for the newly discovered three-dimensional topological insulators, which exhibit topologically protected conducting surface states that reside inside the bulk band gap. Studying topological insulators such as Bi2Se3 in nanostructures is advantageous because of the high surfaceto-volume ratio, which enhances effects from the surface states; recently reported Aharonov-Bohm oscillation in topological insulator nanoribbons by some of us is a good example. Theoretically, introducing magnetic impurities in topological insulators is predicted to open a small gap in the surface states by breaking time-reversal symmetry. Here, we present synthesis of magnetically doped Bi 2Se3 nanoribbons by vapor-liquid-solid growth using magnetic metal thin films as catalysts. Although the doping concentration is less than ∼2 %. low-temperature transport measurements of the Fe-doped Bi2Se3 nanoribbon devices show a clear Kondo effect at temperatures below 30 K, confirming the presence of magnetic impurities in the Bi2Se3 nanoribbons. The capability to dope topological insulator nanostructures magnetically opens up exciting opportunities for spintronics. © 2010 American Chemical Society.
Citation:
Cha JJ, Williams JR, Kong D, Meister S, Peng H, et al. (2010) Magnetic Doping and Kondo Effect in Bi 2 Se 3 Nanoribbons . Nano Lett 10: 1076–1081. Available: http://dx.doi.org/10.1021/nl100146n.
Publisher:
American Chemical Society (ACS)
Journal:
Nano Letters
KAUST Grant Number:
S-11-001-12
Issue Date:
10-Mar-2010
DOI:
10.1021/nl100146n
PubMed ID:
20131918
Type:
Article
ISSN:
1530-6984; 1530-6992
Sponsors:
This work was made possible by Support from the King Abdullah University of Science and Technology (KAUST) Investigator Award (No. KUS-11-001-12) and by an NSF-NRI Supplement to the Center for Probing the Nanoscale, an NSF Nanoscale Science and Engineering Center (PHY-0830228). D.G.-G. acknowledges support from the D. and L. Packard Foundation and the Hellman Faculty Scholar program. J.R.W. acknowledges support from the K. van Bibber Postdoctoral Fellowship of the Stanford Physics Department. A.J.B. acknowledges Support from in NDSEG Graduate Fellowship. P.G. acknowledges support from the Stanford Vice Provost for Undergraduate Education.
Appears in Collections:
Publications Acknowledging KAUST Support

Full metadata record

DC FieldValue Language
dc.contributor.authorCha, Judy J.en
dc.contributor.authorWilliams, James R.en
dc.contributor.authorKong, Deshengen
dc.contributor.authorMeister, Stefanen
dc.contributor.authorPeng, Hailinen
dc.contributor.authorBestwick, Andrew J.en
dc.contributor.authorGallagher, Patricken
dc.contributor.authorGoldhaber-Gordon, Daviden
dc.contributor.authorCui, Yien
dc.date.accessioned2016-02-25T13:40:25Zen
dc.date.available2016-02-25T13:40:25Zen
dc.date.issued2010-03-10en
dc.identifier.citationCha JJ, Williams JR, Kong D, Meister S, Peng H, et al. (2010) Magnetic Doping and Kondo Effect in Bi 2 Se 3 Nanoribbons . Nano Lett 10: 1076–1081. Available: http://dx.doi.org/10.1021/nl100146n.en
dc.identifier.issn1530-6984en
dc.identifier.issn1530-6992en
dc.identifier.pmid20131918en
dc.identifier.doi10.1021/nl100146nen
dc.identifier.urihttp://hdl.handle.net/10754/598748en
dc.description.abstractA simple surface band structure and a large bulk band gap have allowed Bi2Se3 to become a reference material for the newly discovered three-dimensional topological insulators, which exhibit topologically protected conducting surface states that reside inside the bulk band gap. Studying topological insulators such as Bi2Se3 in nanostructures is advantageous because of the high surfaceto-volume ratio, which enhances effects from the surface states; recently reported Aharonov-Bohm oscillation in topological insulator nanoribbons by some of us is a good example. Theoretically, introducing magnetic impurities in topological insulators is predicted to open a small gap in the surface states by breaking time-reversal symmetry. Here, we present synthesis of magnetically doped Bi 2Se3 nanoribbons by vapor-liquid-solid growth using magnetic metal thin films as catalysts. Although the doping concentration is less than ∼2 %. low-temperature transport measurements of the Fe-doped Bi2Se3 nanoribbon devices show a clear Kondo effect at temperatures below 30 K, confirming the presence of magnetic impurities in the Bi2Se3 nanoribbons. The capability to dope topological insulator nanostructures magnetically opens up exciting opportunities for spintronics. © 2010 American Chemical Society.en
dc.description.sponsorshipThis work was made possible by Support from the King Abdullah University of Science and Technology (KAUST) Investigator Award (No. KUS-11-001-12) and by an NSF-NRI Supplement to the Center for Probing the Nanoscale, an NSF Nanoscale Science and Engineering Center (PHY-0830228). D.G.-G. acknowledges support from the D. and L. Packard Foundation and the Hellman Faculty Scholar program. J.R.W. acknowledges support from the K. van Bibber Postdoctoral Fellowship of the Stanford Physics Department. A.J.B. acknowledges Support from in NDSEG Graduate Fellowship. P.G. acknowledges support from the Stanford Vice Provost for Undergraduate Education.en
dc.publisherAmerican Chemical Society (ACS)en
dc.subjectBismuth selenideen
dc.subjectKondo effecten
dc.subjectMagnetic dopingen
dc.subjectNanoribbonen
dc.subjectTopological insulatoren
dc.titleMagnetic Doping and Kondo Effect in Bi 2 Se 3 Nanoribbonsen
dc.typeArticleen
dc.identifier.journalNano Lettersen
dc.contributor.institutionStanford University, Palo Alto, United Statesen
dc.contributor.institutionCollege of Chemistry and Molecular Engineering, Peking University, Beijing, Chinaen
kaust.grant.numberS-11-001-12en

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