Large area crystallization of amorphous Si with overlapping high repetition rate laser pulses

Handle URI:
http://hdl.handle.net/10754/598694
Title:
Large area crystallization of amorphous Si with overlapping high repetition rate laser pulses
Authors:
Ryu, Sang-Gil; Gruber, Ivan; Grigoropoulos, Costas P.; Poulikakos, Dimos; Moon, Seung-Jae
Abstract:
This paper presents a pulsed laser crystallization technique, enabling large area crystallization of amorphous Si to produce grains having well-defined size and orientation. The method is developed by first determining the parameters influencing crystallization induced by single laser pulses of circular cross-sectional profile. In a second step, crystallization by overlapping round spots is examined. The experiments reveal three zones characterized by distinctly different crystallized morphologies following the laser irradiation. One of these zones corresponds to the regime of lateral crystal growth, wherein grains are driven towards the center of the spot by the radial temperature gradient. These findings are then applied to processing via line beam profiles that facilitate large area crystallization upon rapid translation of the specimen. Crystallization of extended areas hinges on the determination of the crystal growth length for a single spot. The pitch between successive pulses is then set on the basis of this information. It is shown that the pulse energy has only a weak effect on the crystal growth length. © 2012 Elsevier B.V.
Citation:
Ryu S-G, Gruber I, Grigoropoulos CP, Poulikakos D, Moon S-J (2012) Large area crystallization of amorphous Si with overlapping high repetition rate laser pulses. Thin Solid Films 520: 6724–6729. Available: http://dx.doi.org/10.1016/j.tsf.2012.07.052.
Publisher:
Elsevier BV
Journal:
Thin Solid Films
Issue Date:
Sep-2012
DOI:
10.1016/j.tsf.2012.07.052
Type:
Article
ISSN:
0040-6090
Sponsors:
This work was supported by a grant to CPG by the King Abdullah University of Science and Technology (KAUST).
Appears in Collections:
Publications Acknowledging KAUST Support

Full metadata record

DC FieldValue Language
dc.contributor.authorRyu, Sang-Gilen
dc.contributor.authorGruber, Ivanen
dc.contributor.authorGrigoropoulos, Costas P.en
dc.contributor.authorPoulikakos, Dimosen
dc.contributor.authorMoon, Seung-Jaeen
dc.date.accessioned2016-02-25T13:34:34Zen
dc.date.available2016-02-25T13:34:34Zen
dc.date.issued2012-09en
dc.identifier.citationRyu S-G, Gruber I, Grigoropoulos CP, Poulikakos D, Moon S-J (2012) Large area crystallization of amorphous Si with overlapping high repetition rate laser pulses. Thin Solid Films 520: 6724–6729. Available: http://dx.doi.org/10.1016/j.tsf.2012.07.052.en
dc.identifier.issn0040-6090en
dc.identifier.doi10.1016/j.tsf.2012.07.052en
dc.identifier.urihttp://hdl.handle.net/10754/598694en
dc.description.abstractThis paper presents a pulsed laser crystallization technique, enabling large area crystallization of amorphous Si to produce grains having well-defined size and orientation. The method is developed by first determining the parameters influencing crystallization induced by single laser pulses of circular cross-sectional profile. In a second step, crystallization by overlapping round spots is examined. The experiments reveal three zones characterized by distinctly different crystallized morphologies following the laser irradiation. One of these zones corresponds to the regime of lateral crystal growth, wherein grains are driven towards the center of the spot by the radial temperature gradient. These findings are then applied to processing via line beam profiles that facilitate large area crystallization upon rapid translation of the specimen. Crystallization of extended areas hinges on the determination of the crystal growth length for a single spot. The pitch between successive pulses is then set on the basis of this information. It is shown that the pulse energy has only a weak effect on the crystal growth length. © 2012 Elsevier B.V.en
dc.description.sponsorshipThis work was supported by a grant to CPG by the King Abdullah University of Science and Technology (KAUST).en
dc.publisherElsevier BVen
dc.subjectAtomic force microscopyen
dc.subjectLarge area annealingen
dc.subjectLaser crystallizationen
dc.subjectLateral growthen
dc.subjectSiliconen
dc.subjectThin filmsen
dc.titleLarge area crystallization of amorphous Si with overlapping high repetition rate laser pulsesen
dc.typeArticleen
dc.identifier.journalThin Solid Filmsen
dc.contributor.institutionUC Berkeley, Berkeley, United Statesen
dc.contributor.institutionEidgenossische Technische Hochschule Zurich, Zurich, Switzerlanden
dc.contributor.institutionHanyang University, Seoul, South Koreaen
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