Joint Mapping of Mobility and Trap Density in Colloidal Quantum Dot Solids

Handle URI:
http://hdl.handle.net/10754/598681
Title:
Joint Mapping of Mobility and Trap Density in Colloidal Quantum Dot Solids
Authors:
Stadler, Philipp; Sutherland, Brandon R.; Ren, Yuan; Ning, Zhijun; Simchi, Arash; Thon, Susanna M.; Hoogland, Sjoerd; Sargent, Edward H.
Abstract:
Field-effect transistors have been widely used to study electronic transport and doping in colloidal quantum dot solids to great effect. However, the full power of these devices to elucidate the electronic structure of materials has yet to be harnessed. Here, we deploy nanodielectric field-effect transistors to map the energy landscape within the band gap of a colloidal quantum dot solid. We exploit the self-limiting nature of the potentiostatic anodization growth mode to produce the thinnest usable gate dielectric, subject to our voltage breakdown requirements defined by the Fermi sweep range of interest. Lead sulfide colloidal quantum dots are applied as the active region and are treated with varying solvents and ligands. In an analysis complementary to the mobility trends commonly extracted from field-effect transistor studies, we focus instead on the subthreshold regime and map out the density of trap states in these nanocrystal films. The findings point to the importance of comprehensively mapping the electronic band- and gap-structure within real quantum solids, and they suggest a new focus in investigating quantum dot solids with an aim toward improving optoelectronic device performance. © 2013 American Chemical Society.
Citation:
Stadler P, Sutherland BR, Ren Y, Ning Z, Simchi A, et al. (2013) Joint Mapping of Mobility and Trap Density in Colloidal Quantum Dot Solids. ACS Nano 7: 5757–5762. Available: http://dx.doi.org/10.1021/nn401396y.
Publisher:
American Chemical Society (ACS)
Journal:
ACS Nano
KAUST Grant Number:
KUS-11-009-21
Issue Date:
23-Jul-2013
DOI:
10.1021/nn401396y
PubMed ID:
23786265
Type:
Article
ISSN:
1936-0851; 1936-086X
Sponsors:
This publication is based in part on work supported by an award (KUS-11-009-21) from the King Abdullah University of Science and Technology (KAUST), by the Ontario Research Fund Research Excellence Program, and by the Natural Sciences and Engineering Research Council (NSERC) of Canada. The authors thank O. Voznyy for his invaluable discourse.
Appears in Collections:
Publications Acknowledging KAUST Support

Full metadata record

DC FieldValue Language
dc.contributor.authorStadler, Philippen
dc.contributor.authorSutherland, Brandon R.en
dc.contributor.authorRen, Yuanen
dc.contributor.authorNing, Zhijunen
dc.contributor.authorSimchi, Arashen
dc.contributor.authorThon, Susanna M.en
dc.contributor.authorHoogland, Sjoerden
dc.contributor.authorSargent, Edward H.en
dc.date.accessioned2016-02-25T13:34:21Zen
dc.date.available2016-02-25T13:34:21Zen
dc.date.issued2013-07-23en
dc.identifier.citationStadler P, Sutherland BR, Ren Y, Ning Z, Simchi A, et al. (2013) Joint Mapping of Mobility and Trap Density in Colloidal Quantum Dot Solids. ACS Nano 7: 5757–5762. Available: http://dx.doi.org/10.1021/nn401396y.en
dc.identifier.issn1936-0851en
dc.identifier.issn1936-086Xen
dc.identifier.pmid23786265en
dc.identifier.doi10.1021/nn401396yen
dc.identifier.urihttp://hdl.handle.net/10754/598681en
dc.description.abstractField-effect transistors have been widely used to study electronic transport and doping in colloidal quantum dot solids to great effect. However, the full power of these devices to elucidate the electronic structure of materials has yet to be harnessed. Here, we deploy nanodielectric field-effect transistors to map the energy landscape within the band gap of a colloidal quantum dot solid. We exploit the self-limiting nature of the potentiostatic anodization growth mode to produce the thinnest usable gate dielectric, subject to our voltage breakdown requirements defined by the Fermi sweep range of interest. Lead sulfide colloidal quantum dots are applied as the active region and are treated with varying solvents and ligands. In an analysis complementary to the mobility trends commonly extracted from field-effect transistor studies, we focus instead on the subthreshold regime and map out the density of trap states in these nanocrystal films. The findings point to the importance of comprehensively mapping the electronic band- and gap-structure within real quantum solids, and they suggest a new focus in investigating quantum dot solids with an aim toward improving optoelectronic device performance. © 2013 American Chemical Society.en
dc.description.sponsorshipThis publication is based in part on work supported by an award (KUS-11-009-21) from the King Abdullah University of Science and Technology (KAUST), by the Ontario Research Fund Research Excellence Program, and by the Natural Sciences and Engineering Research Council (NSERC) of Canada. The authors thank O. Voznyy for his invaluable discourse.en
dc.publisherAmerican Chemical Society (ACS)en
dc.subjectcolloidal quantum dotsen
dc.subjectfield-effect transistoren
dc.subjectmobilityen
dc.subjectsubthreshold swingen
dc.subjecttrap statesen
dc.titleJoint Mapping of Mobility and Trap Density in Colloidal Quantum Dot Solidsen
dc.typeArticleen
dc.identifier.journalACS Nanoen
dc.contributor.institutionUniversity of Toronto, Toronto, Canadaen
dc.contributor.institutionSharif University of Technology, Tehran, Iranen
kaust.grant.numberKUS-11-009-21en

Related articles on PubMed

All Items in KAUST are protected by copyright, with all rights reserved, unless otherwise indicated.