Interfacial molecular order of conjugated polymer in P3HT:ZnO bilayer photovoltaics and its impact on device performance

Handle URI:
http://hdl.handle.net/10754/598656
Title:
Interfacial molecular order of conjugated polymer in P3HT:ZnO bilayer photovoltaics and its impact on device performance
Authors:
Wood, Sebastian; Franklin, Joseph B.; Stavrinou, Paul N.; McLachlan, Martyn A.; Kim, Ji-Seon
Abstract:
Hybrid (organic-oxide) photovoltaic device performance is highly dependent on the nature and quality of the organic-oxide interface. This work investigates the details of interfacial morphology in terms of the molecular order of poly(3-hexylthiophene) (P3HT) at the planar interface with zinc oxide (ZnO) formed by pulsed laser deposition. Resonant Raman spectroscopy is employed as a powerful morphological probe for conjugated polymers to reveal that the interfacial P3HT is disrupted during the deposition process whereas the bulk polymer shows an increase in molecular order. External quantum efficiency measurements of P3HT:ZnO bilayer devices show that this disordered P3HT region is active in photocurrent generation. © 2013 AIP Publishing LLC.
Citation:
Wood S, Franklin JB, Stavrinou PN, McLachlan MA, Kim J-S (2013) Interfacial molecular order of conjugated polymer in P3HT:ZnO bilayer photovoltaics and its impact on device performance. Applied Physics Letters 103: 153304. Available: http://dx.doi.org/10.1063/1.4824847.
Publisher:
AIP Publishing
Journal:
Applied Physics Letters
Issue Date:
2013
DOI:
10.1063/1.4824847
Type:
Article
ISSN:
0003-6951
Sponsors:
The authors gratefully acknowledge funding provided by the EPSRC Centre for Doctoral Training (EP/G037515/1) and World Class University (WCU) program in Korea (Grant No. R32-10051). J.B.F. is grateful to KAUST for research funding. Thanks are due to Jonathan Downing (IC) for preliminary experimental work.
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Full metadata record

DC FieldValue Language
dc.contributor.authorWood, Sebastianen
dc.contributor.authorFranklin, Joseph B.en
dc.contributor.authorStavrinou, Paul N.en
dc.contributor.authorMcLachlan, Martyn A.en
dc.contributor.authorKim, Ji-Seonen
dc.date.accessioned2016-02-25T13:33:54Zen
dc.date.available2016-02-25T13:33:54Zen
dc.date.issued2013en
dc.identifier.citationWood S, Franklin JB, Stavrinou PN, McLachlan MA, Kim J-S (2013) Interfacial molecular order of conjugated polymer in P3HT:ZnO bilayer photovoltaics and its impact on device performance. Applied Physics Letters 103: 153304. Available: http://dx.doi.org/10.1063/1.4824847.en
dc.identifier.issn0003-6951en
dc.identifier.doi10.1063/1.4824847en
dc.identifier.urihttp://hdl.handle.net/10754/598656en
dc.description.abstractHybrid (organic-oxide) photovoltaic device performance is highly dependent on the nature and quality of the organic-oxide interface. This work investigates the details of interfacial morphology in terms of the molecular order of poly(3-hexylthiophene) (P3HT) at the planar interface with zinc oxide (ZnO) formed by pulsed laser deposition. Resonant Raman spectroscopy is employed as a powerful morphological probe for conjugated polymers to reveal that the interfacial P3HT is disrupted during the deposition process whereas the bulk polymer shows an increase in molecular order. External quantum efficiency measurements of P3HT:ZnO bilayer devices show that this disordered P3HT region is active in photocurrent generation. © 2013 AIP Publishing LLC.en
dc.description.sponsorshipThe authors gratefully acknowledge funding provided by the EPSRC Centre for Doctoral Training (EP/G037515/1) and World Class University (WCU) program in Korea (Grant No. R32-10051). J.B.F. is grateful to KAUST for research funding. Thanks are due to Jonathan Downing (IC) for preliminary experimental work.en
dc.publisherAIP Publishingen
dc.titleInterfacial molecular order of conjugated polymer in P3HT:ZnO bilayer photovoltaics and its impact on device performanceen
dc.typeArticleen
dc.identifier.journalApplied Physics Lettersen
dc.contributor.institutionImperial College London, London, United Kingdomen
dc.contributor.institutionKorea Advanced Institute of Science & Technology, Yusong, South Koreaen
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