High performance tunnel injection InGaN/GaN quantum Dot light emitting diodes emitting in the green (λ=495nm)

Handle URI:
http://hdl.handle.net/10754/598477
Title:
High performance tunnel injection InGaN/GaN quantum Dot light emitting diodes emitting in the green (λ=495nm)
Authors:
Zhang, Meng; Banerjee, Animesh; Bhattacharya, Pallab
Abstract:
InGaN/GaN self-organized quantum dots with density of (2-5)×10 10 cm-2, internal quantum efficiency of 32% and a reduced recombination lifetime of 0.6 ns were grown by plasma assisted molecular beam epitaxy. The photoluminescence spectra of the dots peak at 495 nm at 300 K. The characteristics of tunnel injection InGaN/GaN quantum dot light emitting diodes are presented. The current density at maximum efficiency is 90.2 A/cm 2, which is superior to equivalent multiquantum well devices. © 2010 Elsevier B.V. All rights reserved.
Citation:
Zhang M, Banerjee A, Bhattacharya P (2011) High performance tunnel injection InGaN/GaN quantum Dot light emitting diodes emitting in the green (λ=495nm). Journal of Crystal Growth 323: 470–472. Available: http://dx.doi.org/10.1016/j.jcrysgro.2010.12.038.
Publisher:
Elsevier BV
Journal:
Journal of Crystal Growth
Issue Date:
May-2011
DOI:
10.1016/j.jcrysgro.2010.12.038
Type:
Article
ISSN:
0022-0248
Sponsors:
The work was supported by a grant from KAUST.
Appears in Collections:
Publications Acknowledging KAUST Support

Full metadata record

DC FieldValue Language
dc.contributor.authorZhang, Mengen
dc.contributor.authorBanerjee, Animeshen
dc.contributor.authorBhattacharya, Pallaben
dc.date.accessioned2016-02-25T13:21:26Zen
dc.date.available2016-02-25T13:21:26Zen
dc.date.issued2011-05en
dc.identifier.citationZhang M, Banerjee A, Bhattacharya P (2011) High performance tunnel injection InGaN/GaN quantum Dot light emitting diodes emitting in the green (λ=495nm). Journal of Crystal Growth 323: 470–472. Available: http://dx.doi.org/10.1016/j.jcrysgro.2010.12.038.en
dc.identifier.issn0022-0248en
dc.identifier.doi10.1016/j.jcrysgro.2010.12.038en
dc.identifier.urihttp://hdl.handle.net/10754/598477en
dc.description.abstractInGaN/GaN self-organized quantum dots with density of (2-5)×10 10 cm-2, internal quantum efficiency of 32% and a reduced recombination lifetime of 0.6 ns were grown by plasma assisted molecular beam epitaxy. The photoluminescence spectra of the dots peak at 495 nm at 300 K. The characteristics of tunnel injection InGaN/GaN quantum dot light emitting diodes are presented. The current density at maximum efficiency is 90.2 A/cm 2, which is superior to equivalent multiquantum well devices. © 2010 Elsevier B.V. All rights reserved.en
dc.description.sponsorshipThe work was supported by a grant from KAUST.en
dc.publisherElsevier BVen
dc.subjectLight emitting diodesen
dc.subjectMolecular beam epitaxyen
dc.subjectNitridesen
dc.subjectSelf-organized quantum dotsen
dc.titleHigh performance tunnel injection InGaN/GaN quantum Dot light emitting diodes emitting in the green (λ=495nm)en
dc.typeArticleen
dc.identifier.journalJournal of Crystal Growthen
dc.contributor.institutionUniversity Michigan Ann Arbor, Ann Arbor, United Statesen
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