High performance ring oscillators from 10-nm wide silicon nanowire field-effect transistors

Handle URI:
http://hdl.handle.net/10754/598475
Title:
High performance ring oscillators from 10-nm wide silicon nanowire field-effect transistors
Authors:
Huang, Ruo-Gu; Tham, Douglas; Wang, Dunwei; Heath, James R.
Abstract:
We explore 10-nm wide Si nanowire (SiNW) field-effect transistors (FETs) for logic applications, via the fabrication and testing of SiNW-based ring oscillators. We report on SiNW surface treatments and dielectric annealing, for producing SiNW FETs that exhibit high performance in terms of large on/off-state current ratio (~108), low drain-induced barrier lowering (~30 mV) and low subthreshold swing (~80 mV/decade). The performance of inverter and ring-oscillator circuits fabricated from these nanowire FETs are also explored. The inverter demonstrates the highest voltage gain (~148) reported for a SiNW-based NOT gate, and the ring oscillator exhibits near rail-to-rail oscillation centered at 13.4 MHz. The static and dynamic characteristics of these NW devices indicate that these SiNW-based FET circuits are excellent candidates for various high-performance nanoelectronic applications. © 2011 Tsinghua University Press and Springer-Verlag Berlin Heidelberg.
Citation:
Huang R-G, Tham D, Wang D, Heath JR (2011) High performance ring oscillators from 10-nm wide silicon nanowire field-effect transistors. Nano Research 4: 1005–1012. Available: http://dx.doi.org/10.1007/s12274-011-0157-2.
Publisher:
Springer Nature
Journal:
Nano Research
Issue Date:
24-Jun-2011
DOI:
10.1007/s12274-011-0157-2
Type:
Article
ISSN:
1998-0124; 1998-0000
Sponsors:
The authors acknowledge H. Ahmad and Y. -S. Shin for graphics assistance. This work was funded by the National Science Foundation under Grant CCF-0541461 and the Department of Energy (DE-FG02-04ER46175). D. Tham gratefully acknowledges support by the KAUST Scholar Award.
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Publications Acknowledging KAUST Support

Full metadata record

DC FieldValue Language
dc.contributor.authorHuang, Ruo-Guen
dc.contributor.authorTham, Douglasen
dc.contributor.authorWang, Dunweien
dc.contributor.authorHeath, James R.en
dc.date.accessioned2016-02-25T13:21:24Zen
dc.date.available2016-02-25T13:21:24Zen
dc.date.issued2011-06-24en
dc.identifier.citationHuang R-G, Tham D, Wang D, Heath JR (2011) High performance ring oscillators from 10-nm wide silicon nanowire field-effect transistors. Nano Research 4: 1005–1012. Available: http://dx.doi.org/10.1007/s12274-011-0157-2.en
dc.identifier.issn1998-0124en
dc.identifier.issn1998-0000en
dc.identifier.doi10.1007/s12274-011-0157-2en
dc.identifier.urihttp://hdl.handle.net/10754/598475en
dc.description.abstractWe explore 10-nm wide Si nanowire (SiNW) field-effect transistors (FETs) for logic applications, via the fabrication and testing of SiNW-based ring oscillators. We report on SiNW surface treatments and dielectric annealing, for producing SiNW FETs that exhibit high performance in terms of large on/off-state current ratio (~108), low drain-induced barrier lowering (~30 mV) and low subthreshold swing (~80 mV/decade). The performance of inverter and ring-oscillator circuits fabricated from these nanowire FETs are also explored. The inverter demonstrates the highest voltage gain (~148) reported for a SiNW-based NOT gate, and the ring oscillator exhibits near rail-to-rail oscillation centered at 13.4 MHz. The static and dynamic characteristics of these NW devices indicate that these SiNW-based FET circuits are excellent candidates for various high-performance nanoelectronic applications. © 2011 Tsinghua University Press and Springer-Verlag Berlin Heidelberg.en
dc.description.sponsorshipThe authors acknowledge H. Ahmad and Y. -S. Shin for graphics assistance. This work was funded by the National Science Foundation under Grant CCF-0541461 and the Department of Energy (DE-FG02-04ER46175). D. Tham gratefully acknowledges support by the KAUST Scholar Award.en
dc.publisherSpringer Natureen
dc.subjectfield-effect transistor (FET)en
dc.subjectinverteren
dc.subjectring oscillatoren
dc.subjectSilicon nanowire (SiNW)en
dc.subjectsurface treatmenten
dc.titleHigh performance ring oscillators from 10-nm wide silicon nanowire field-effect transistorsen
dc.typeArticleen
dc.identifier.journalNano Researchen
dc.contributor.institutionCalifornia Institute of Technology, Pasadena, United Statesen
dc.contributor.institutionBoston College, Chestnut Hill, United Statesen
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