Heteroepitaxial Patterned Growth of Vertically Aligned and Periodically Distributed ZnO Nanowires on GaN Using Laser Interference Ablation

Handle URI:
http://hdl.handle.net/10754/598451
Title:
Heteroepitaxial Patterned Growth of Vertically Aligned and Periodically Distributed ZnO Nanowires on GaN Using Laser Interference Ablation
Authors:
Yuan, Dajun; Guo, Rui; Wei, Yaguang; Wu, Wenzhuo; Ding, Yong; Wang, Zhong Lin; Das, Suman
Abstract:
A simple two-step method of fabricating vertically aligned and periodically distributed ZnO nanowires on gallium nitride (GaN) substrates is described. The method combines laser interference ablation (LIA) and low temperature hydrothermal decomposition. The ZnO nanowires grow heteroepitaxially on unablated regions of GaN over areas spanning 1 cm2, with a high degree of control over size, orientation, uniformity, and periodicity. High resolution transmission electron microscopy and scanning electron microscopy are utilized to study the structural characteristics of the LIA-patterned GaN substrate in detail. These studies reveal the possible mechanism for the preferential, site-selective growth of the ZnO nanowires. The method demonstrates high application potential for wafer-scale integration into sensor arrays, piezoelectric devices, and optoelectronic devices. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Citation:
Yuan D, Guo R, Wei Y, Wu W, Ding Y, et al. (2010) Heteroepitaxial Patterned Growth of Vertically Aligned and Periodically Distributed ZnO Nanowires on GaN Using Laser Interference Ablation. Advanced Functional Materials 20: 3484–3489. Available: http://dx.doi.org/10.1002/adfm.201001058.
Publisher:
Wiley-Blackwell
Journal:
Advanced Functional Materials
Issue Date:
23-Aug-2010
DOI:
10.1002/adfm.201001058
Type:
Article
ISSN:
1616-301X
Sponsors:
D. Yuan and R. Guo contributed equally to this work. Research was supported by the Georgia Institute of Technology, DARPA (Army/AMCOM/REDSTONE AR, W31P4Q-08–1–0009), BES DOE (DE-FG02–07ER46394), KAUST Global Research Partnership, NSF (DMS0706436, CMMI 0403671), and the MANA WPI program from NIMS, Japan.
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Publications Acknowledging KAUST Support

Full metadata record

DC FieldValue Language
dc.contributor.authorYuan, Dajunen
dc.contributor.authorGuo, Ruien
dc.contributor.authorWei, Yaguangen
dc.contributor.authorWu, Wenzhuoen
dc.contributor.authorDing, Yongen
dc.contributor.authorWang, Zhong Linen
dc.contributor.authorDas, Sumanen
dc.date.accessioned2016-02-25T13:20:57Zen
dc.date.available2016-02-25T13:20:57Zen
dc.date.issued2010-08-23en
dc.identifier.citationYuan D, Guo R, Wei Y, Wu W, Ding Y, et al. (2010) Heteroepitaxial Patterned Growth of Vertically Aligned and Periodically Distributed ZnO Nanowires on GaN Using Laser Interference Ablation. Advanced Functional Materials 20: 3484–3489. Available: http://dx.doi.org/10.1002/adfm.201001058.en
dc.identifier.issn1616-301Xen
dc.identifier.doi10.1002/adfm.201001058en
dc.identifier.urihttp://hdl.handle.net/10754/598451en
dc.description.abstractA simple two-step method of fabricating vertically aligned and periodically distributed ZnO nanowires on gallium nitride (GaN) substrates is described. The method combines laser interference ablation (LIA) and low temperature hydrothermal decomposition. The ZnO nanowires grow heteroepitaxially on unablated regions of GaN over areas spanning 1 cm2, with a high degree of control over size, orientation, uniformity, and periodicity. High resolution transmission electron microscopy and scanning electron microscopy are utilized to study the structural characteristics of the LIA-patterned GaN substrate in detail. These studies reveal the possible mechanism for the preferential, site-selective growth of the ZnO nanowires. The method demonstrates high application potential for wafer-scale integration into sensor arrays, piezoelectric devices, and optoelectronic devices. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.en
dc.description.sponsorshipD. Yuan and R. Guo contributed equally to this work. Research was supported by the Georgia Institute of Technology, DARPA (Army/AMCOM/REDSTONE AR, W31P4Q-08–1–0009), BES DOE (DE-FG02–07ER46394), KAUST Global Research Partnership, NSF (DMS0706436, CMMI 0403671), and the MANA WPI program from NIMS, Japan.en
dc.publisherWiley-Blackwellen
dc.subjectepitaxyen
dc.subjectnanostructuresen
dc.subjectpatterningen
dc.subjectzinc oxide nanowiresen
dc.titleHeteroepitaxial Patterned Growth of Vertically Aligned and Periodically Distributed ZnO Nanowires on GaN Using Laser Interference Ablationen
dc.typeArticleen
dc.identifier.journalAdvanced Functional Materialsen
dc.contributor.institutionThe George W. Woodruff School of Mechanical Engineering, Atlanta, United Statesen
dc.contributor.institutionGeorgia Institute of Technology, Atlanta, United Statesen
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