Handle URI:
http://hdl.handle.net/10754/598439
Title:
Growth of Horizonatal ZnO Nanowire Arrays on Any Substrate
Authors:
Qin, Yong; Yang, Rusen; Wang, Zhong Lin
Abstract:
A general method is presented for growing laterally aligned and patterned ZnO nanowire (NW) arrays on any substrate as long as it is flat. The orientation control is achieved using the combined effect from ZnO seed layer and the catalytically inactive Cr (or Sn) layer for NW growth. The growth temperature (< 100 °C) is so low that the method can be applied to a wide range of substrates that can be inorganic, organic, single crystal, polycrystal, or amorphous. The laterally aligned ZnO NW arrays can be employed for various applications, such as gas sensor, field effect transistor, nanogenerator, and flexible electronics. © 2008 American Chemical Society.
Citation:
Qin Y, Yang R, Wang ZL (2008) Growth of Horizonatal ZnO Nanowire Arrays on Any Substrate. The Journal of Physical Chemistry C 112: 18734–18736. Available: http://dx.doi.org/10.1021/jp808869j.
Publisher:
American Chemical Society (ACS)
Journal:
The Journal of Physical Chemistry C
Issue Date:
4-Dec-2008
DOI:
10.1021/jp808869j
Type:
Article
ISSN:
1932-7447; 1932-7455
Sponsors:
This research was supported by DARPA (Army/AMCOM/REDSTONE AR, W31P4Q-08-1-0009), DARPA STTR with Magnolia Optical Inc., BES DOE (DE-FG02-07ER46394), Air Force Office (FA9550-08-1-0446), KAUST Global Research Partnership, National Institute For Materials, Japan, Emory-Georgia Tech CCNE from NIH, NSF (DMS 0706436, CMMI 0403671).
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Publications Acknowledging KAUST Support

Full metadata record

DC FieldValue Language
dc.contributor.authorQin, Yongen
dc.contributor.authorYang, Rusenen
dc.contributor.authorWang, Zhong Linen
dc.date.accessioned2016-02-25T13:20:44Zen
dc.date.available2016-02-25T13:20:44Zen
dc.date.issued2008-12-04en
dc.identifier.citationQin Y, Yang R, Wang ZL (2008) Growth of Horizonatal ZnO Nanowire Arrays on Any Substrate. The Journal of Physical Chemistry C 112: 18734–18736. Available: http://dx.doi.org/10.1021/jp808869j.en
dc.identifier.issn1932-7447en
dc.identifier.issn1932-7455en
dc.identifier.doi10.1021/jp808869jen
dc.identifier.urihttp://hdl.handle.net/10754/598439en
dc.description.abstractA general method is presented for growing laterally aligned and patterned ZnO nanowire (NW) arrays on any substrate as long as it is flat. The orientation control is achieved using the combined effect from ZnO seed layer and the catalytically inactive Cr (or Sn) layer for NW growth. The growth temperature (< 100 °C) is so low that the method can be applied to a wide range of substrates that can be inorganic, organic, single crystal, polycrystal, or amorphous. The laterally aligned ZnO NW arrays can be employed for various applications, such as gas sensor, field effect transistor, nanogenerator, and flexible electronics. © 2008 American Chemical Society.en
dc.description.sponsorshipThis research was supported by DARPA (Army/AMCOM/REDSTONE AR, W31P4Q-08-1-0009), DARPA STTR with Magnolia Optical Inc., BES DOE (DE-FG02-07ER46394), Air Force Office (FA9550-08-1-0446), KAUST Global Research Partnership, National Institute For Materials, Japan, Emory-Georgia Tech CCNE from NIH, NSF (DMS 0706436, CMMI 0403671).en
dc.publisherAmerican Chemical Society (ACS)en
dc.titleGrowth of Horizonatal ZnO Nanowire Arrays on Any Substrateen
dc.typeArticleen
dc.identifier.journalThe Journal of Physical Chemistry Cen
dc.contributor.institutionGeorgia Institute of Technology, Atlanta, United Statesen
dc.contributor.institutionLanzhou University, Lanzhou, Chinaen
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