Handle URI:
http://hdl.handle.net/10754/598394
Title:
GaN Nanowire Arrays for High-Output Nanogenerators
Authors:
Huang, Chi-Te; Song, Jinhui; Lee, Wei-Fan; Ding, Yong; Gao, Zhiyuan; Hao, Yue; Chen, Lih-Juann; Wang, Zhong Lin
Abstract:
Three-fold symmetrically distributed GaN nanowire (NW) arrays have been epitaxially grown on GaN/sapphire substrates. The GaN NW possesses a triangular cross section enclosed by (0001), (2112), and (2112) planes, and the angle between the GaN NW and the substrate surface is ∼62°. The GaN NW arrays produce negative output voltage pulses when scanned by a conductive atomic force microscope in contact mode. The average of piezoelectric output voltage was about -20 mV, while 5-10% of the NWs had piezoelectric output voltages exceeding -(0.15-0.35) V. The GaN NW arrays are highly stable and highly tolerate to moisture in the atmosphere. The GaN NW arrays demonstrate an outstanding potential to be utilized for piezoelectric energy generation with a performance probably better than that of ZnO NWs. © 2010 American Chemical Society.
Citation:
Huang C-T, Song J, Lee W-F, Ding Y, Gao Z, et al. (2010) GaN Nanowire Arrays for High-Output Nanogenerators. Journal of the American Chemical Society 132: 4766–4771. Available: http://dx.doi.org/10.1021/ja909863a.
Publisher:
American Chemical Society (ACS)
Journal:
Journal of the American Chemical Society
Issue Date:
7-Apr-2010
DOI:
10.1021/ja909863a
PubMed ID:
20218713
Type:
Article
ISSN:
0002-7863; 1520-5126
Sponsors:
This research was supported by DARPA (Army/AMCOM/REDSTONE AR, W31P4Q-08-1-0009), BES DOE (DE-FG02-07ER46394), KAUST, and NSF (DMS0706436, CMMI 0403671). Thanks are also due to the National Science Council of Taiwan, Republic of China, for a fellowship to study abroad (C.-T.H.) (N5C97-2917-1-007-110).
Appears in Collections:
Publications Acknowledging KAUST Support

Full metadata record

DC FieldValue Language
dc.contributor.authorHuang, Chi-Teen
dc.contributor.authorSong, Jinhuien
dc.contributor.authorLee, Wei-Fanen
dc.contributor.authorDing, Yongen
dc.contributor.authorGao, Zhiyuanen
dc.contributor.authorHao, Yueen
dc.contributor.authorChen, Lih-Juannen
dc.contributor.authorWang, Zhong Linen
dc.date.accessioned2016-02-25T13:19:58Zen
dc.date.available2016-02-25T13:19:58Zen
dc.date.issued2010-04-07en
dc.identifier.citationHuang C-T, Song J, Lee W-F, Ding Y, Gao Z, et al. (2010) GaN Nanowire Arrays for High-Output Nanogenerators. Journal of the American Chemical Society 132: 4766–4771. Available: http://dx.doi.org/10.1021/ja909863a.en
dc.identifier.issn0002-7863en
dc.identifier.issn1520-5126en
dc.identifier.pmid20218713en
dc.identifier.doi10.1021/ja909863aen
dc.identifier.urihttp://hdl.handle.net/10754/598394en
dc.description.abstractThree-fold symmetrically distributed GaN nanowire (NW) arrays have been epitaxially grown on GaN/sapphire substrates. The GaN NW possesses a triangular cross section enclosed by (0001), (2112), and (2112) planes, and the angle between the GaN NW and the substrate surface is ∼62°. The GaN NW arrays produce negative output voltage pulses when scanned by a conductive atomic force microscope in contact mode. The average of piezoelectric output voltage was about -20 mV, while 5-10% of the NWs had piezoelectric output voltages exceeding -(0.15-0.35) V. The GaN NW arrays are highly stable and highly tolerate to moisture in the atmosphere. The GaN NW arrays demonstrate an outstanding potential to be utilized for piezoelectric energy generation with a performance probably better than that of ZnO NWs. © 2010 American Chemical Society.en
dc.description.sponsorshipThis research was supported by DARPA (Army/AMCOM/REDSTONE AR, W31P4Q-08-1-0009), BES DOE (DE-FG02-07ER46394), KAUST, and NSF (DMS0706436, CMMI 0403671). Thanks are also due to the National Science Council of Taiwan, Republic of China, for a fellowship to study abroad (C.-T.H.) (N5C97-2917-1-007-110).en
dc.publisherAmerican Chemical Society (ACS)en
dc.titleGaN Nanowire Arrays for High-Output Nanogeneratorsen
dc.typeArticleen
dc.identifier.journalJournal of the American Chemical Societyen
dc.contributor.institutionGeorgia Institute of Technology, Atlanta, United Statesen
dc.contributor.institutionNational Tsing Hua University, Hsin-chu, Taiwanen
dc.contributor.institutionXidian University, Xi'an, Chinaen

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