Few-Layer Nanoplates of Bi 2 Se 3 and Bi 2 Te 3 with Highly Tunable Chemical Potential

Handle URI:
http://hdl.handle.net/10754/598324
Title:
Few-Layer Nanoplates of Bi 2 Se 3 and Bi 2 Te 3 with Highly Tunable Chemical Potential
Authors:
Kong, Desheng; Dang, Wenhui; Cha, Judy J.; Li, Hui; Meister, Stefan; Peng, Hailin; Liu, Zhongfan; Cui, Yi
Abstract:
A topological insulator (TI) represents an unconventional quantum phase of matter with insulating bulk band gap and metallic surface states. Recent theoretical calculations and photoemission spectroscopy measurements show that group V-VI materials Bi2Se3, Bi2Te3, and Sb2Te3 are TIs with a single Dirac cone on the surface. These materials have anisotropic, layered structures, in which five atomic layers are covalently bonded to form a quintuple layer, and quintuple layers interact weakly through van der Waals interaction to form the crystal. A few quintuple layers of these materials are predicted to exhibit interesting surface properties. Different from our previous nanoribbon study, here we report the synthesis and characterizations of ultrathin Bi2Te3 and Bi2Se3 nanoplates with thickness down to 3 nm (3 quintuple layers), via catalyst-free vapor-solid (VS) growth mechanism. Optical images reveal thickness-dependent color and contrast for nanoplates grown on oxidized silicon (300 nm SiO2/Si). As a new member of TI nanomaterials, ultrathin TI nanoplates have an extremely large surface-to-volume ratio and can be electrically gated more effectively than the bulk form, potentially enhancing surface state effects in transport measurements. Low-temperature transport measurements of a single nanoplate device, with a high-k dielectric top gate, show decrease in carrier concentration by several times and large tuning of chemical potential. © 2010 American Chemical Society.
Citation:
Kong D, Dang W, Cha JJ, Li H, Meister S, et al. (2010) Few-Layer Nanoplates of Bi 2 Se 3 and Bi 2 Te 3 with Highly Tunable Chemical Potential . Nano Lett 10: 2245–2250. Available: http://dx.doi.org/10.1021/nl101260j.
Publisher:
American Chemical Society (ACS)
Journal:
Nano Letters
KAUST Grant Number:
KUS-I1-001-12
Issue Date:
9-Jun-2010
DOI:
10.1021/nl101260j
PubMed ID:
20486680
Type:
Article
ISSN:
1530-6984; 1530-6992
Sponsors:
Y.C. acknowledges the support from the Keck Foundation. This work is also made possible by the King Abdullah University of Science and Technology (KAUST) Investigator Award (No. KUS-I1-001-12). H.P. acknowledges support from NSFC (20973007, 20973013, 50821061) and MOST (2007CB936203).
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Full metadata record

DC FieldValue Language
dc.contributor.authorKong, Deshengen
dc.contributor.authorDang, Wenhuien
dc.contributor.authorCha, Judy J.en
dc.contributor.authorLi, Huien
dc.contributor.authorMeister, Stefanen
dc.contributor.authorPeng, Hailinen
dc.contributor.authorLiu, Zhongfanen
dc.contributor.authorCui, Yien
dc.date.accessioned2016-02-25T13:18:43Zen
dc.date.available2016-02-25T13:18:43Zen
dc.date.issued2010-06-09en
dc.identifier.citationKong D, Dang W, Cha JJ, Li H, Meister S, et al. (2010) Few-Layer Nanoplates of Bi 2 Se 3 and Bi 2 Te 3 with Highly Tunable Chemical Potential . Nano Lett 10: 2245–2250. Available: http://dx.doi.org/10.1021/nl101260j.en
dc.identifier.issn1530-6984en
dc.identifier.issn1530-6992en
dc.identifier.pmid20486680en
dc.identifier.doi10.1021/nl101260jen
dc.identifier.urihttp://hdl.handle.net/10754/598324en
dc.description.abstractA topological insulator (TI) represents an unconventional quantum phase of matter with insulating bulk band gap and metallic surface states. Recent theoretical calculations and photoemission spectroscopy measurements show that group V-VI materials Bi2Se3, Bi2Te3, and Sb2Te3 are TIs with a single Dirac cone on the surface. These materials have anisotropic, layered structures, in which five atomic layers are covalently bonded to form a quintuple layer, and quintuple layers interact weakly through van der Waals interaction to form the crystal. A few quintuple layers of these materials are predicted to exhibit interesting surface properties. Different from our previous nanoribbon study, here we report the synthesis and characterizations of ultrathin Bi2Te3 and Bi2Se3 nanoplates with thickness down to 3 nm (3 quintuple layers), via catalyst-free vapor-solid (VS) growth mechanism. Optical images reveal thickness-dependent color and contrast for nanoplates grown on oxidized silicon (300 nm SiO2/Si). As a new member of TI nanomaterials, ultrathin TI nanoplates have an extremely large surface-to-volume ratio and can be electrically gated more effectively than the bulk form, potentially enhancing surface state effects in transport measurements. Low-temperature transport measurements of a single nanoplate device, with a high-k dielectric top gate, show decrease in carrier concentration by several times and large tuning of chemical potential. © 2010 American Chemical Society.en
dc.description.sponsorshipY.C. acknowledges the support from the Keck Foundation. This work is also made possible by the King Abdullah University of Science and Technology (KAUST) Investigator Award (No. KUS-I1-001-12). H.P. acknowledges support from NSFC (20973007, 20973013, 50821061) and MOST (2007CB936203).en
dc.publisherAmerican Chemical Society (ACS)en
dc.subjectBismuth selenideen
dc.subjectBismuth tellurideen
dc.subjectNanoplateen
dc.subjectTopological insulatoren
dc.titleFew-Layer Nanoplates of Bi 2 Se 3 and Bi 2 Te 3 with Highly Tunable Chemical Potentialen
dc.typeArticleen
dc.identifier.journalNano Lettersen
dc.contributor.institutionStanford University, Palo Alto, United Statesen
dc.contributor.institutionCollege of Chemistry and Molecular Engineering, Peking University, Beijing, Chinaen
kaust.grant.numberKUS-I1-001-12en

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