Electrical control of memristance and magnetoresistance in oxide magnetic tunnel junctions

Handle URI:
http://hdl.handle.net/10754/598127
Title:
Electrical control of memristance and magnetoresistance in oxide magnetic tunnel junctions
Authors:
Zhang, Kun; Cao, Yan-ling; Fang, Yue-wen; Li, Qiang; Zhang, Jie; Duan, Chun-gang; Yan, Shi-shen; Tian, Yu-feng; Huang, Rong; Zheng, Rong-kun; Kang, Shi-shou; Chen, Yan-xue; Liu, Guo-lei; Mei, Liang-mo
Abstract:
Electric-field control of magnetic and transport properties of magnetic tunnel junctions has promising applications in spintronics. Here, we experimentally demonstrate a reversible electrical manipulation of memristance, magnetoresistance, and exchange bias in Co/CoO–ZnO/Co magnetic tunnel junctions, which enables the realization of four nonvolatile resistance states. Moreover, greatly enhanced tunneling magnetoresistance of 68% was observed due to the enhanced spin polarization of the bottom Co/CoO interface. The ab initio calculations further indicate that the spin polarization of the Co/CoO interface is as high as 73% near the Fermi level and plenty of oxygen vacancies can induce metal–insulator transition of the CoO1−v layer. Thus, the electrical manipulation mechanism on the memristance, magnetoresistance and exchange bias can be attributed to the electric-field-driven migration of oxygen ions/vacancies between very thin CoO and ZnO layers.
Citation:
Zhang K, Cao Y, Fang Y, Li Q, Zhang J, et al. (2015) Electrical control of memristance and magnetoresistance in oxide magnetic tunnel junctions. Nanoscale 7: 6334–6339. Available: http://dx.doi.org/10.1039/c5nr00522a.
Publisher:
Royal Society of Chemistry (RSC)
Journal:
Nanoscale
Issue Date:
2015
DOI:
10.1039/c5nr00522a
PubMed ID:
25785667
Type:
Article
ISSN:
2040-3364; 2040-3372
Sponsors:
Y.W. Fang appreciates useful discussions with U.D. Wdowik of Pedagogical University, S. Grytsyuk from KAUST and Prof. Marie-Liesse Doublet from CNRS. This work was supported by the key program of NSFC no. 11434006, the NBRP of China no. 2013CB922303 and 2014CB921104, the NSF for Distinguished Young Scholars of China (no. 51125004), 111 project no. B13029, and NSFC no. 11374187 and 61125403.
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Full metadata record

DC FieldValue Language
dc.contributor.authorZhang, Kunen
dc.contributor.authorCao, Yan-lingen
dc.contributor.authorFang, Yue-wenen
dc.contributor.authorLi, Qiangen
dc.contributor.authorZhang, Jieen
dc.contributor.authorDuan, Chun-gangen
dc.contributor.authorYan, Shi-shenen
dc.contributor.authorTian, Yu-fengen
dc.contributor.authorHuang, Rongen
dc.contributor.authorZheng, Rong-kunen
dc.contributor.authorKang, Shi-shouen
dc.contributor.authorChen, Yan-xueen
dc.contributor.authorLiu, Guo-leien
dc.contributor.authorMei, Liang-moen
dc.date.accessioned2016-02-25T13:13:10Zen
dc.date.available2016-02-25T13:13:10Zen
dc.date.issued2015en
dc.identifier.citationZhang K, Cao Y, Fang Y, Li Q, Zhang J, et al. (2015) Electrical control of memristance and magnetoresistance in oxide magnetic tunnel junctions. Nanoscale 7: 6334–6339. Available: http://dx.doi.org/10.1039/c5nr00522a.en
dc.identifier.issn2040-3364en
dc.identifier.issn2040-3372en
dc.identifier.pmid25785667en
dc.identifier.doi10.1039/c5nr00522aen
dc.identifier.urihttp://hdl.handle.net/10754/598127en
dc.description.abstractElectric-field control of magnetic and transport properties of magnetic tunnel junctions has promising applications in spintronics. Here, we experimentally demonstrate a reversible electrical manipulation of memristance, magnetoresistance, and exchange bias in Co/CoO–ZnO/Co magnetic tunnel junctions, which enables the realization of four nonvolatile resistance states. Moreover, greatly enhanced tunneling magnetoresistance of 68% was observed due to the enhanced spin polarization of the bottom Co/CoO interface. The ab initio calculations further indicate that the spin polarization of the Co/CoO interface is as high as 73% near the Fermi level and plenty of oxygen vacancies can induce metal–insulator transition of the CoO1−v layer. Thus, the electrical manipulation mechanism on the memristance, magnetoresistance and exchange bias can be attributed to the electric-field-driven migration of oxygen ions/vacancies between very thin CoO and ZnO layers.en
dc.description.sponsorshipY.W. Fang appreciates useful discussions with U.D. Wdowik of Pedagogical University, S. Grytsyuk from KAUST and Prof. Marie-Liesse Doublet from CNRS. This work was supported by the key program of NSFC no. 11434006, the NBRP of China no. 2013CB922303 and 2014CB921104, the NSF for Distinguished Young Scholars of China (no. 51125004), 111 project no. B13029, and NSFC no. 11374187 and 61125403.en
dc.publisherRoyal Society of Chemistry (RSC)en
dc.titleElectrical control of memristance and magnetoresistance in oxide magnetic tunnel junctionsen
dc.typeArticleen
dc.identifier.journalNanoscaleen
dc.contributor.institutionSchool of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, P. R. Chinaen
dc.contributor.institutionKey Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University, Shanghai, P. R. Chinaen
dc.contributor.institutionAustralian Center for Microscopy & Microanalysis, University of Sydney, Sydney, Australiaen

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