Efficiency enhancement of solid-state PbS quantum dot-sensitized solar cells with Al2O3 barrier layer

Handle URI:
http://hdl.handle.net/10754/598094
Title:
Efficiency enhancement of solid-state PbS quantum dot-sensitized solar cells with Al2O3 barrier layer
Authors:
Brennan, Thomas P.; Trejo, Orlando; Roelofs, Katherine E.; Xu, John; Prinz, Fritz B.; Bent, Stacey F.
Abstract:
Atomic layer deposition (ALD) was used to grow both PbS quantum dots and Al2O3 barrier layers in a solid-state quantum dot-sensitized solar cell (QDSSC). Barrier layers grown prior to quantum dots resulted in a near-doubling of device efficiency (0.30% to 0.57%) whereas barrier layers grown after quantum dots did not improve efficiency, indicating the importance of quantum dots in recombination processes. © 2013 The Royal Society of Chemistry.
Citation:
Brennan TP, Trejo O, Roelofs KE, Xu J, Prinz FB, et al. (2013) Efficiency enhancement of solid-state PbS quantum dot-sensitized solar cells with Al2O3 barrier layer. Journal of Materials Chemistry A 1: 7566. Available: http://dx.doi.org/10.1039/c3ta10903h.
Publisher:
Royal Society of Chemistry (RSC)
Journal:
Journal of Materials Chemistry A
KAUST Grant Number:
KUS-C1-015-21
Issue Date:
2013
DOI:
10.1039/c3ta10903h
Type:
Article
ISSN:
2050-7488; 2050-7496
Sponsors:
This publication was based on work supported by the Center for Advanced Molecular Photovoltaics (Award no. KUS-C1-015-21), made by King Abdullah University of Science and Technology (KAUST). F.B.P. and O.T. gratefully acknowledge support for ALD PbS deposition from the Center on Nanostructuring for Efficient Energy Conversion (CNEEC) at Stanford University, an Energy Frontier Research Center funded by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences under Award Number DE-SC0001060. T.P.B. would like to thank the Albion Walter Hewlett Fellowship for financial support. We would like to thank Professor Michael McGehee for use of lab equipment and Colin Bailie, Dr Eric Hoke, and George Margulis for training on transient photovoltage measurements. We would like to thank the Stanford Nanocharacterization Laboratory (SNL) staff for their support.
Appears in Collections:
Publications Acknowledging KAUST Support

Full metadata record

DC FieldValue Language
dc.contributor.authorBrennan, Thomas P.en
dc.contributor.authorTrejo, Orlandoen
dc.contributor.authorRoelofs, Katherine E.en
dc.contributor.authorXu, Johnen
dc.contributor.authorPrinz, Fritz B.en
dc.contributor.authorBent, Stacey F.en
dc.date.accessioned2016-02-25T13:12:34Zen
dc.date.available2016-02-25T13:12:34Zen
dc.date.issued2013en
dc.identifier.citationBrennan TP, Trejo O, Roelofs KE, Xu J, Prinz FB, et al. (2013) Efficiency enhancement of solid-state PbS quantum dot-sensitized solar cells with Al2O3 barrier layer. Journal of Materials Chemistry A 1: 7566. Available: http://dx.doi.org/10.1039/c3ta10903h.en
dc.identifier.issn2050-7488en
dc.identifier.issn2050-7496en
dc.identifier.doi10.1039/c3ta10903hen
dc.identifier.urihttp://hdl.handle.net/10754/598094en
dc.description.abstractAtomic layer deposition (ALD) was used to grow both PbS quantum dots and Al2O3 barrier layers in a solid-state quantum dot-sensitized solar cell (QDSSC). Barrier layers grown prior to quantum dots resulted in a near-doubling of device efficiency (0.30% to 0.57%) whereas barrier layers grown after quantum dots did not improve efficiency, indicating the importance of quantum dots in recombination processes. © 2013 The Royal Society of Chemistry.en
dc.description.sponsorshipThis publication was based on work supported by the Center for Advanced Molecular Photovoltaics (Award no. KUS-C1-015-21), made by King Abdullah University of Science and Technology (KAUST). F.B.P. and O.T. gratefully acknowledge support for ALD PbS deposition from the Center on Nanostructuring for Efficient Energy Conversion (CNEEC) at Stanford University, an Energy Frontier Research Center funded by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences under Award Number DE-SC0001060. T.P.B. would like to thank the Albion Walter Hewlett Fellowship for financial support. We would like to thank Professor Michael McGehee for use of lab equipment and Colin Bailie, Dr Eric Hoke, and George Margulis for training on transient photovoltage measurements. We would like to thank the Stanford Nanocharacterization Laboratory (SNL) staff for their support.en
dc.publisherRoyal Society of Chemistry (RSC)en
dc.titleEfficiency enhancement of solid-state PbS quantum dot-sensitized solar cells with Al2O3 barrier layeren
dc.typeArticleen
dc.identifier.journalJournal of Materials Chemistry Aen
dc.contributor.institutionStanford University, Palo Alto, United Statesen
kaust.grant.numberKUS-C1-015-21en
kaust.grant.fundedcenterCenter for Advanced Molecular Photovoltaics (CAMP)en
All Items in KAUST are protected by copyright, with all rights reserved, unless otherwise indicated.