Effects of piezoelectric potential on the transport characteristics of metal-ZnO nanowire-metal field effect transistor

Handle URI:
http://hdl.handle.net/10754/598083
Title:
Effects of piezoelectric potential on the transport characteristics of metal-ZnO nanowire-metal field effect transistor
Authors:
Gao, Zhiyuan; Zhou, Jun; Gu, Yudong; Fei, Peng; Hao, Yue; Bao, Gang; Wang, Zhong Lin
Abstract:
We have investigated the effects of piezoelectric potential in a ZnO nanowire on the transport characteristics of the nanowire based field effect transistor through numerical calculations and experimental observations. Under different straining conditions including stretching, compressing, twisting, and their combination, a piezoelectric potential is created throughout the nanowire to modulatealternate the transport property of the metal-ZnO nanowire contacts, resulting in a switch between symmetric and asymmetric contacts at the two ends, or even turning an Ohmic contact type into a diode. The commonly observed natural rectifying behavior of the as-fabricated ZnO nanowire can be attributed to the strain that was unpurposely created in the nanowire during device fabrication and material handling. This work provides further evidence on piezopotential governed electronic transport and devices, e.g., piezotronics.
Citation:
Gao Z, Zhou J, Gu Y, Fei P, Hao Y, et al. (2009) Effects of piezoelectric potential on the transport characteristics of metal-ZnO nanowire-metal field effect transistor. Journal of Applied Physics 105: 113707. Available: http://dx.doi.org/10.1063/1.3125449.
Publisher:
AIP Publishing
Journal:
Journal of Applied Physics
Issue Date:
2009
DOI:
10.1063/1.3125449
PubMed ID:
19657403
PubMed Central ID:
PMC2719466
Type:
Article
ISSN:
0021-8979
Sponsors:
Research supported by DARPA (Army/AMCOM/REDSTONE AR, Grant No. W31P4Q-08-1-0009), BES DOE (Grant No. DE-FG02-07ER46394), Air Force Office (Grant No. FA9550-08-1-0446), DARPA/ARO Grant No. W911NF-08-1-0249, KAUST Global Research Partnership, World Premier International Research Center (WPI) Initiative on Materials Nanoarchitectonics, MEXT, Japan, EmoryGeorgia Tech CCNE from NIH (Grant No. CA119338), and NSF (Grant Nos. DMS 0706436 and CMMI 0403671). Z.Y.G., Y.D.G., and P. F. thank the partial fellowship support by the China Scholarship Council (CSC) (Grant No. 20073020)
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Publications Acknowledging KAUST Support

Full metadata record

DC FieldValue Language
dc.contributor.authorGao, Zhiyuanen
dc.contributor.authorZhou, Junen
dc.contributor.authorGu, Yudongen
dc.contributor.authorFei, Pengen
dc.contributor.authorHao, Yueen
dc.contributor.authorBao, Gangen
dc.contributor.authorWang, Zhong Linen
dc.date.accessioned2016-02-25T13:12:21Zen
dc.date.available2016-02-25T13:12:21Zen
dc.date.issued2009en
dc.identifier.citationGao Z, Zhou J, Gu Y, Fei P, Hao Y, et al. (2009) Effects of piezoelectric potential on the transport characteristics of metal-ZnO nanowire-metal field effect transistor. Journal of Applied Physics 105: 113707. Available: http://dx.doi.org/10.1063/1.3125449.en
dc.identifier.issn0021-8979en
dc.identifier.pmid19657403en
dc.identifier.doi10.1063/1.3125449en
dc.identifier.urihttp://hdl.handle.net/10754/598083en
dc.description.abstractWe have investigated the effects of piezoelectric potential in a ZnO nanowire on the transport characteristics of the nanowire based field effect transistor through numerical calculations and experimental observations. Under different straining conditions including stretching, compressing, twisting, and their combination, a piezoelectric potential is created throughout the nanowire to modulatealternate the transport property of the metal-ZnO nanowire contacts, resulting in a switch between symmetric and asymmetric contacts at the two ends, or even turning an Ohmic contact type into a diode. The commonly observed natural rectifying behavior of the as-fabricated ZnO nanowire can be attributed to the strain that was unpurposely created in the nanowire during device fabrication and material handling. This work provides further evidence on piezopotential governed electronic transport and devices, e.g., piezotronics.en
dc.description.sponsorshipResearch supported by DARPA (Army/AMCOM/REDSTONE AR, Grant No. W31P4Q-08-1-0009), BES DOE (Grant No. DE-FG02-07ER46394), Air Force Office (Grant No. FA9550-08-1-0446), DARPA/ARO Grant No. W911NF-08-1-0249, KAUST Global Research Partnership, World Premier International Research Center (WPI) Initiative on Materials Nanoarchitectonics, MEXT, Japan, EmoryGeorgia Tech CCNE from NIH (Grant No. CA119338), and NSF (Grant Nos. DMS 0706436 and CMMI 0403671). Z.Y.G., Y.D.G., and P. F. thank the partial fellowship support by the China Scholarship Council (CSC) (Grant No. 20073020)en
dc.publisherAIP Publishingen
dc.titleEffects of piezoelectric potential on the transport characteristics of metal-ZnO nanowire-metal field effect transistoren
dc.typeArticleen
dc.identifier.journalJournal of Applied Physicsen
dc.identifier.pmcidPMC2719466en
dc.contributor.institutionGeorgia Institute of Technology, Atlanta, United Statesen
dc.contributor.institutionXidian University, Xi'an, Chinaen
dc.contributor.institutionEmory University, Atlanta, United Statesen
dc.contributor.institutionPeking University, Beijing, Chinaen

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