Effect of Al 2 O 3 Recombination Barrier Layers Deposited by Atomic Layer Deposition in Solid-State CdS Quantum Dot-Sensitized Solar Cells

Handle URI:
http://hdl.handle.net/10754/598048
Title:
Effect of Al 2 O 3 Recombination Barrier Layers Deposited by Atomic Layer Deposition in Solid-State CdS Quantum Dot-Sensitized Solar Cells
Authors:
Roelofs, Katherine E.; Brennan, Thomas P.; Dominguez, Juan C.; Bailie, Colin D.; Margulis, George Y.; Hoke, Eric T.; McGehee, Michael D.; Bent, Stacey F.
Abstract:
Despite the promise of quantum dots (QDs) as a light-absorbing material to replace the dye in dye-sensitized solar cells, quantum dot-sensitized solar cell (QDSSC) efficiencies remain low, due in part to high rates of recombination. In this article, we demonstrate that ultrathin recombination barrier layers of Al2O3 deposited by atomic layer deposition can improve the performance of cadmium sulfide (CdS) quantum dot-sensitized solar cells with spiro-OMeTAD as the solid-state hole transport material. We explored depositing the Al2O3 barrier layers either before or after the QDs, resulting in TiO2/Al2O3/QD and TiO 2/QD/Al2O3 configurations. The effects of barrier layer configuration and thickness were tracked through current-voltage measurements of device performance and transient photovoltage measurements of electron lifetimes. The Al2O3 layers were found to suppress dark current and increase electron lifetimes with increasing Al 2O3 thickness in both configurations. For thin barrier layers, gains in open-circuit voltage and concomitant increases in efficiency were observed, although at greater thicknesses, losses in photocurrent caused net decreases in efficiency. A close comparison of the electron lifetimes in TiO2 in the TiO2/Al2O3/QD and TiO2/QD/Al2O3 configurations suggests that electron transfer from TiO2 to spiro-OMeTAD is a major source of recombination in ss-QDSSCs, though recombination of TiO2 electrons with oxidized QDs can also limit electron lifetimes, particularly if the regeneration of oxidized QDs is hindered by a too-thick coating of the barrier layer. © 2013 American Chemical Society.
Citation:
Roelofs KE, Brennan TP, Dominguez JC, Bailie CD, Margulis GY, et al. (2013) Effect of Al 2 O 3 Recombination Barrier Layers Deposited by Atomic Layer Deposition in Solid-State CdS Quantum Dot-Sensitized Solar Cells . The Journal of Physical Chemistry C 117: 5584–5592. Available: http://dx.doi.org/10.1021/jp311846r.
Publisher:
American Chemical Society (ACS)
Journal:
The Journal of Physical Chemistry C
KAUST Grant Number:
KUS-C1-015-21
Issue Date:
21-Mar-2013
DOI:
10.1021/jp311846r
Type:
Article
ISSN:
1932-7447; 1932-7455
Sponsors:
This publication was based on work supported by the Center for Advanced Molecular Photovoltaics (Award No. KUS-C1-015-21), made by King Abdullah University of Science and Technology (KAUST). We would like to thank the Stanford Nanocharacterization Laboratory (SNL) staff for their support. The ALD reactor and process development for these studies were carried out with support by the Center for Nanostructuring for Efficient Energy Conversion, an Energy Frontier Research Center (EFRC) funded by the U.S. Department of Energy, Office of Basic Energy Sciences, Award No. DE-SC0001060.
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Full metadata record

DC FieldValue Language
dc.contributor.authorRoelofs, Katherine E.en
dc.contributor.authorBrennan, Thomas P.en
dc.contributor.authorDominguez, Juan C.en
dc.contributor.authorBailie, Colin D.en
dc.contributor.authorMargulis, George Y.en
dc.contributor.authorHoke, Eric T.en
dc.contributor.authorMcGehee, Michael D.en
dc.contributor.authorBent, Stacey F.en
dc.date.accessioned2016-02-25T13:11:41Zen
dc.date.available2016-02-25T13:11:41Zen
dc.date.issued2013-03-21en
dc.identifier.citationRoelofs KE, Brennan TP, Dominguez JC, Bailie CD, Margulis GY, et al. (2013) Effect of Al 2 O 3 Recombination Barrier Layers Deposited by Atomic Layer Deposition in Solid-State CdS Quantum Dot-Sensitized Solar Cells . The Journal of Physical Chemistry C 117: 5584–5592. Available: http://dx.doi.org/10.1021/jp311846r.en
dc.identifier.issn1932-7447en
dc.identifier.issn1932-7455en
dc.identifier.doi10.1021/jp311846ren
dc.identifier.urihttp://hdl.handle.net/10754/598048en
dc.description.abstractDespite the promise of quantum dots (QDs) as a light-absorbing material to replace the dye in dye-sensitized solar cells, quantum dot-sensitized solar cell (QDSSC) efficiencies remain low, due in part to high rates of recombination. In this article, we demonstrate that ultrathin recombination barrier layers of Al2O3 deposited by atomic layer deposition can improve the performance of cadmium sulfide (CdS) quantum dot-sensitized solar cells with spiro-OMeTAD as the solid-state hole transport material. We explored depositing the Al2O3 barrier layers either before or after the QDs, resulting in TiO2/Al2O3/QD and TiO 2/QD/Al2O3 configurations. The effects of barrier layer configuration and thickness were tracked through current-voltage measurements of device performance and transient photovoltage measurements of electron lifetimes. The Al2O3 layers were found to suppress dark current and increase electron lifetimes with increasing Al 2O3 thickness in both configurations. For thin barrier layers, gains in open-circuit voltage and concomitant increases in efficiency were observed, although at greater thicknesses, losses in photocurrent caused net decreases in efficiency. A close comparison of the electron lifetimes in TiO2 in the TiO2/Al2O3/QD and TiO2/QD/Al2O3 configurations suggests that electron transfer from TiO2 to spiro-OMeTAD is a major source of recombination in ss-QDSSCs, though recombination of TiO2 electrons with oxidized QDs can also limit electron lifetimes, particularly if the regeneration of oxidized QDs is hindered by a too-thick coating of the barrier layer. © 2013 American Chemical Society.en
dc.description.sponsorshipThis publication was based on work supported by the Center for Advanced Molecular Photovoltaics (Award No. KUS-C1-015-21), made by King Abdullah University of Science and Technology (KAUST). We would like to thank the Stanford Nanocharacterization Laboratory (SNL) staff for their support. The ALD reactor and process development for these studies were carried out with support by the Center for Nanostructuring for Efficient Energy Conversion, an Energy Frontier Research Center (EFRC) funded by the U.S. Department of Energy, Office of Basic Energy Sciences, Award No. DE-SC0001060.en
dc.publisherAmerican Chemical Society (ACS)en
dc.titleEffect of Al 2 O 3 Recombination Barrier Layers Deposited by Atomic Layer Deposition in Solid-State CdS Quantum Dot-Sensitized Solar Cellsen
dc.typeArticleen
dc.identifier.journalThe Journal of Physical Chemistry Cen
dc.contributor.institutionStanford University, Palo Alto, United Statesen
kaust.grant.numberKUS-C1-015-21en
kaust.grant.fundedcenterCenter for Advanced Molecular Photovoltaics (CAMP)en
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