Dead zones in colloidal quantum dot photovoltaics: evidence and implications

Handle URI:
http://hdl.handle.net/10754/597919
Title:
Dead zones in colloidal quantum dot photovoltaics: evidence and implications
Authors:
Barkhouse, D. Aaron R.; Kramer, Illan J.; Wang, Xihua; Sargent, Edward H.
Abstract:
In order to fabricate photovoltaic (PV) cells incorporating light-trapping electrodes, flexible foil substrates, or more than one junction, illumination through the top-contact (i.e.: non-substrate) side of a photovoltaic device is desirable. We investigate the relative collection efficiency for illumination through the top vs. bottom of PbS colloidal quantum dot (CQD) PV devices. The external quantum efficiency spectra of FTO/TiO2/PbS CQD/ITO PV devices with various PbS layer thicknesses were measured for illumination through either the top (ITO) or bottom (FTO) contacts. By comparing the relative shapes and intensities of these spectra with those calculated from an estimation of the carrier generation profile and the internal quantum efficiency as a function of distance from the TiO2 interface in the devices, a substantial dead zone, where carrier extraction is dramatically reduced, is identified near the ITO top contact. The implications for device design, and possible means of avoiding the formation of such a dead zone, are discussed.
Citation:
Barkhouse DAR, Kramer IJ, Wang X, Sargent EH (2010) Dead zones in colloidal quantum dot photovoltaics: evidence and implications. Optics Express 18: A451. Available: http://dx.doi.org/10.1364/OE.18.00A451.
Publisher:
The Optical Society
Journal:
Optics Express
KAUST Grant Number:
KUS-I1-009-21
Issue Date:
1-Sep-2010
DOI:
10.1364/OE.18.00A451
PubMed ID:
21165075
Type:
Article
ISSN:
1094-4087
Sponsors:
This publication was supported in part by King Abdullah University of Science and Technology (KAUST), Award No. KUS-I1-009-21.
Appears in Collections:
Publications Acknowledging KAUST Support

Full metadata record

DC FieldValue Language
dc.contributor.authorBarkhouse, D. Aaron R.en
dc.contributor.authorKramer, Illan J.en
dc.contributor.authorWang, Xihuaen
dc.contributor.authorSargent, Edward H.en
dc.date.accessioned2016-02-25T12:58:53Zen
dc.date.available2016-02-25T12:58:53Zen
dc.date.issued2010-09-01en
dc.identifier.citationBarkhouse DAR, Kramer IJ, Wang X, Sargent EH (2010) Dead zones in colloidal quantum dot photovoltaics: evidence and implications. Optics Express 18: A451. Available: http://dx.doi.org/10.1364/OE.18.00A451.en
dc.identifier.issn1094-4087en
dc.identifier.pmid21165075en
dc.identifier.doi10.1364/OE.18.00A451en
dc.identifier.urihttp://hdl.handle.net/10754/597919en
dc.description.abstractIn order to fabricate photovoltaic (PV) cells incorporating light-trapping electrodes, flexible foil substrates, or more than one junction, illumination through the top-contact (i.e.: non-substrate) side of a photovoltaic device is desirable. We investigate the relative collection efficiency for illumination through the top vs. bottom of PbS colloidal quantum dot (CQD) PV devices. The external quantum efficiency spectra of FTO/TiO2/PbS CQD/ITO PV devices with various PbS layer thicknesses were measured for illumination through either the top (ITO) or bottom (FTO) contacts. By comparing the relative shapes and intensities of these spectra with those calculated from an estimation of the carrier generation profile and the internal quantum efficiency as a function of distance from the TiO2 interface in the devices, a substantial dead zone, where carrier extraction is dramatically reduced, is identified near the ITO top contact. The implications for device design, and possible means of avoiding the formation of such a dead zone, are discussed.en
dc.description.sponsorshipThis publication was supported in part by King Abdullah University of Science and Technology (KAUST), Award No. KUS-I1-009-21.en
dc.publisherThe Optical Societyen
dc.titleDead zones in colloidal quantum dot photovoltaics: evidence and implicationsen
dc.typeArticleen
dc.identifier.journalOptics Expressen
dc.contributor.institutionDepartment of Electrical and Computer Engineering, University of Toronto, 10 King’s College Road, Toronto, Ontario M5S 3G4, Canadaen
kaust.grant.numberKUS-I1-009-21en

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