Cryogenic microwave imaging of metal–insulator transition in doped silicon

Handle URI:
http://hdl.handle.net/10754/597903
Title:
Cryogenic microwave imaging of metal–insulator transition in doped silicon
Authors:
Kundhikanjana, Worasom; Lai, Keji; Kelly, Michael A.; Shen, Zhi-Xun
Abstract:
We report the instrumentation and experimental results of a cryogenic scanning microwave impedance microscope. The microwave probe and the scanning stage are located inside the variable temperature insert of a helium cryostat. Microwave signals in the distance modulation mode are used for monitoring the tip-sample distance and adjusting the phase of the two output channels. The ability to spatially resolve the metal-insulator transition in a doped silicon sample is demonstrated. The data agree with a semiquantitative finite element simulation. Effects of the thermal energy and electric fields on local charge carriers can be seen in the images taken at different temperatures and dc biases. © 2011 American Institute of Physics.
Citation:
Kundhikanjana W, Lai K, Kelly MA, Shen Z-X (2011) Cryogenic microwave imaging of metal–insulator transition in doped silicon. Review of Scientific Instruments 82: 033705. Available: http://dx.doi.org/10.1063/1.3554438.
Publisher:
AIP Publishing
Journal:
Review of Scientific Instruments
KAUST Grant Number:
KUS-F1-033-02
Issue Date:
2011
DOI:
10.1063/1.3554438
PubMed ID:
21456749
Type:
Article
ISSN:
0034-6748
Sponsors:
This research is funded by Center of Probing the Nanoscale (CPN), Stanford University, National Science Foundation (NSF) Gran No. DMR-0906027, and (U.S.) Department of Energy (DOE) Contract No. DE-FG03-01ER45929-A011 for low temperature cryostat. This publication is also based on work supported by Award No. KUS-F1-033-02, made by King Abdullah University of Science and Technology (KAUST) under the global research partnership (GRP) program. CPN is an NSF NSEC,National Science Foundation (NSF) Grant No. PHY-0425897.
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Full metadata record

DC FieldValue Language
dc.contributor.authorKundhikanjana, Worasomen
dc.contributor.authorLai, Kejien
dc.contributor.authorKelly, Michael A.en
dc.contributor.authorShen, Zhi-Xunen
dc.date.accessioned2016-02-25T12:58:37Zen
dc.date.available2016-02-25T12:58:37Zen
dc.date.issued2011en
dc.identifier.citationKundhikanjana W, Lai K, Kelly MA, Shen Z-X (2011) Cryogenic microwave imaging of metal–insulator transition in doped silicon. Review of Scientific Instruments 82: 033705. Available: http://dx.doi.org/10.1063/1.3554438.en
dc.identifier.issn0034-6748en
dc.identifier.pmid21456749en
dc.identifier.doi10.1063/1.3554438en
dc.identifier.urihttp://hdl.handle.net/10754/597903en
dc.description.abstractWe report the instrumentation and experimental results of a cryogenic scanning microwave impedance microscope. The microwave probe and the scanning stage are located inside the variable temperature insert of a helium cryostat. Microwave signals in the distance modulation mode are used for monitoring the tip-sample distance and adjusting the phase of the two output channels. The ability to spatially resolve the metal-insulator transition in a doped silicon sample is demonstrated. The data agree with a semiquantitative finite element simulation. Effects of the thermal energy and electric fields on local charge carriers can be seen in the images taken at different temperatures and dc biases. © 2011 American Institute of Physics.en
dc.description.sponsorshipThis research is funded by Center of Probing the Nanoscale (CPN), Stanford University, National Science Foundation (NSF) Gran No. DMR-0906027, and (U.S.) Department of Energy (DOE) Contract No. DE-FG03-01ER45929-A011 for low temperature cryostat. This publication is also based on work supported by Award No. KUS-F1-033-02, made by King Abdullah University of Science and Technology (KAUST) under the global research partnership (GRP) program. CPN is an NSF NSEC,National Science Foundation (NSF) Grant No. PHY-0425897.en
dc.publisherAIP Publishingen
dc.titleCryogenic microwave imaging of metal–insulator transition in doped siliconen
dc.typeArticleen
dc.identifier.journalReview of Scientific Instrumentsen
dc.contributor.institutionGeballe Laboratory for Advanced Materials, Stanford, United Statesen
kaust.grant.numberKUS-F1-033-02en

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