Continuous-wave operation of a $(20\bar{2}\bar{1})$ InGaN laser diode with a photoelectrochemically etched current aperture

Handle URI:
http://hdl.handle.net/10754/597852
Title:
Continuous-wave operation of a $(20\bar{2}\bar{1})$ InGaN laser diode with a photoelectrochemically etched current aperture
Authors:
Megalini, Ludovico; Becerra, Daniel L.; Farrell, Robert M.; Pourhashemi, A.; Speck, James S.; Nakamura, Shuji; DenBaars, Steven P.; Cohen, Daniel A.
Abstract:
© 2015 The Japan Society of Applied Physics. We demonstrated selective and controllable undercut etching of the InGaN/GaN multiple quantum well (MQW) active region of a (2021) laser diode (LD) structure by photoelectrochemical etching. This technique was used to fabricate current aperture edge-emitting blue laser diodes (CALDs), whose performance was compared with that of shallow-etched ridge LDs with a nominally identical epitaxial structure. The threshold current density, threshold voltage, peak output power, and series resistance for the CA-LD (shallow-etched LD) with a 2.5-μm-wide active region were 4.4 (8.1) kA/cm<sup>2</sup>, 6.1 (7.7) V, 96.5 (63.5)mW, and 4.7 (6.0)Ω under pulsed conditions and before facet coating, respectively.
Citation:
Megalini L, Becerra DL, Farrell RM, Pourhashemi A, Speck JS, et al. (2015) Continuous-wave operation of a $(20\bar{2}\bar{1})$ InGaN laser diode with a photoelectrochemically etched current aperture. Applied Physics Express 8: 042701. Available: http://dx.doi.org/10.7567/APEX.8.042701.
Publisher:
Japan Society of Applied Physics
Journal:
Applied Physics Express
Issue Date:
6-Mar-2015
DOI:
10.7567/APEX.8.042701
Type:
Article
ISSN:
1882-0778; 1882-0786
Sponsors:
This work was supported by the Solid State Lighting and Energy Center (SSLEEC) and the KACST-KAUST-UCSB Solid State Lighting Program (SSLP) at UCSB. A portion of this work was carried out in the UCSB nanofabrication facility, part of the NSF NNIN network (ECS-0335765), as well as the UCSB MRL, which is supported by the NSF MRSEC program (DMR1121053).
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Full metadata record

DC FieldValue Language
dc.contributor.authorMegalini, Ludovicoen
dc.contributor.authorBecerra, Daniel L.en
dc.contributor.authorFarrell, Robert M.en
dc.contributor.authorPourhashemi, A.en
dc.contributor.authorSpeck, James S.en
dc.contributor.authorNakamura, Shujien
dc.contributor.authorDenBaars, Steven P.en
dc.contributor.authorCohen, Daniel A.en
dc.date.accessioned2016-02-25T12:57:48Zen
dc.date.available2016-02-25T12:57:48Zen
dc.date.issued2015-03-06en
dc.identifier.citationMegalini L, Becerra DL, Farrell RM, Pourhashemi A, Speck JS, et al. (2015) Continuous-wave operation of a $(20\bar{2}\bar{1})$ InGaN laser diode with a photoelectrochemically etched current aperture. Applied Physics Express 8: 042701. Available: http://dx.doi.org/10.7567/APEX.8.042701.en
dc.identifier.issn1882-0778en
dc.identifier.issn1882-0786en
dc.identifier.doi10.7567/APEX.8.042701en
dc.identifier.urihttp://hdl.handle.net/10754/597852en
dc.description.abstract© 2015 The Japan Society of Applied Physics. We demonstrated selective and controllable undercut etching of the InGaN/GaN multiple quantum well (MQW) active region of a (2021) laser diode (LD) structure by photoelectrochemical etching. This technique was used to fabricate current aperture edge-emitting blue laser diodes (CALDs), whose performance was compared with that of shallow-etched ridge LDs with a nominally identical epitaxial structure. The threshold current density, threshold voltage, peak output power, and series resistance for the CA-LD (shallow-etched LD) with a 2.5-μm-wide active region were 4.4 (8.1) kA/cm<sup>2</sup>, 6.1 (7.7) V, 96.5 (63.5)mW, and 4.7 (6.0)Ω under pulsed conditions and before facet coating, respectively.en
dc.description.sponsorshipThis work was supported by the Solid State Lighting and Energy Center (SSLEEC) and the KACST-KAUST-UCSB Solid State Lighting Program (SSLP) at UCSB. A portion of this work was carried out in the UCSB nanofabrication facility, part of the NSF NNIN network (ECS-0335765), as well as the UCSB MRL, which is supported by the NSF MRSEC program (DMR1121053).en
dc.publisherJapan Society of Applied Physicsen
dc.titleContinuous-wave operation of a $(20\bar{2}\bar{1})$ InGaN laser diode with a photoelectrochemically etched current apertureen
dc.typeArticleen
dc.identifier.journalApplied Physics Expressen
dc.contributor.institutionUniversity of California, Santa Barbara, Santa Barbara, United Statesen
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