Coexistance of Giant Tunneling Electroresistance and Magnetoresistance in an All-Oxide Composite Magnetic Tunnel Junction

Handle URI:
http://hdl.handle.net/10754/597793
Title:
Coexistance of Giant Tunneling Electroresistance and Magnetoresistance in an All-Oxide Composite Magnetic Tunnel Junction
Authors:
Caffrey, Nuala Mai; Archer, Thomas; Rungger, Ivan; Sanvito, Stefano
Abstract:
We propose, by performing advanced abinitio electron transport calculations, an all-oxide composite magnetic tunnel junction, within which both large tunneling magnetoresistance (TMR) and tunneling electroresistance (TER) effects can coexist. The TMR originates from the symmetry-driven spin filtering provided by an insulating BaTiO3 barrier to the electrons injected from the SrRuO3 electrodes. Following recent theoretical suggestions, the TER effect is achieved by intercalating a thin insulating layer, here SrTiO3, at one of the SrRuO3/BaTiO3 interfaces. As the complex band structure of SrTiO3 has the same symmetry as that of BaTiO3, the inclusion of such an intercalated layer does not negatively alter the TMR and in fact increases it. Crucially, the magnitude of the TER also scales with the thickness of the SrTiO3 layer. The SrTiO3 thickness becomes then a single control parameter for both the TMR and the TER effect. This protocol offers a practical way to the fabrication of four-state memory cells. © 2012 American Physical Society.
Citation:
Caffrey NM, Archer T, Rungger I, Sanvito S (2012) Coexistance of Giant Tunneling Electroresistance and Magnetoresistance in an All-Oxide Composite Magnetic Tunnel Junction. Physical Review Letters 109. Available: http://dx.doi.org/10.1103/PhysRevLett.109.226803.
Publisher:
American Physical Society (APS)
Journal:
Physical Review Letters
Issue Date:
30-Nov-2012
DOI:
10.1103/PhysRevLett.109.226803
PubMed ID:
23368147
Type:
Article
ISSN:
0031-9007; 1079-7114
Sponsors:
This work is sponsored by Science Foundation of Ireland (07/IN.1/I945) and by the EU-FP7 (ATHENA and iFOX projects). I. R. is sponsored by the King Abdullah University of Science and Technology (ACRAB project). Computational resources have been provided by the HEA IITAC project managed by TCHPC.
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Full metadata record

DC FieldValue Language
dc.contributor.authorCaffrey, Nuala Maien
dc.contributor.authorArcher, Thomasen
dc.contributor.authorRungger, Ivanen
dc.contributor.authorSanvito, Stefanoen
dc.date.accessioned2016-02-25T12:56:49Zen
dc.date.available2016-02-25T12:56:49Zen
dc.date.issued2012-11-30en
dc.identifier.citationCaffrey NM, Archer T, Rungger I, Sanvito S (2012) Coexistance of Giant Tunneling Electroresistance and Magnetoresistance in an All-Oxide Composite Magnetic Tunnel Junction. Physical Review Letters 109. Available: http://dx.doi.org/10.1103/PhysRevLett.109.226803.en
dc.identifier.issn0031-9007en
dc.identifier.issn1079-7114en
dc.identifier.pmid23368147en
dc.identifier.doi10.1103/PhysRevLett.109.226803en
dc.identifier.urihttp://hdl.handle.net/10754/597793en
dc.description.abstractWe propose, by performing advanced abinitio electron transport calculations, an all-oxide composite magnetic tunnel junction, within which both large tunneling magnetoresistance (TMR) and tunneling electroresistance (TER) effects can coexist. The TMR originates from the symmetry-driven spin filtering provided by an insulating BaTiO3 barrier to the electrons injected from the SrRuO3 electrodes. Following recent theoretical suggestions, the TER effect is achieved by intercalating a thin insulating layer, here SrTiO3, at one of the SrRuO3/BaTiO3 interfaces. As the complex band structure of SrTiO3 has the same symmetry as that of BaTiO3, the inclusion of such an intercalated layer does not negatively alter the TMR and in fact increases it. Crucially, the magnitude of the TER also scales with the thickness of the SrTiO3 layer. The SrTiO3 thickness becomes then a single control parameter for both the TMR and the TER effect. This protocol offers a practical way to the fabrication of four-state memory cells. © 2012 American Physical Society.en
dc.description.sponsorshipThis work is sponsored by Science Foundation of Ireland (07/IN.1/I945) and by the EU-FP7 (ATHENA and iFOX projects). I. R. is sponsored by the King Abdullah University of Science and Technology (ACRAB project). Computational resources have been provided by the HEA IITAC project managed by TCHPC.en
dc.publisherAmerican Physical Society (APS)en
dc.titleCoexistance of Giant Tunneling Electroresistance and Magnetoresistance in an All-Oxide Composite Magnetic Tunnel Junctionen
dc.typeArticleen
dc.identifier.journalPhysical Review Lettersen
dc.contributor.institutionTrinity College Dublin, Dublin, Irelanden

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