Carrier redistribution between different potential sites in semipolar (202¯1) InGaN quantum wells studied by near-field photoluminescence

Handle URI:
http://hdl.handle.net/10754/597736
Title:
Carrier redistribution between different potential sites in semipolar (202¯1) InGaN quantum wells studied by near-field photoluminescence
Authors:
Marcinkevičius, S.; Gelžinytė, K.; Zhao, Y.; Nakamura, S.; DenBaars, S. P.; Speck, J. S.
Abstract:
© 2014 AIP Publishing LLC. Scanning near-field photoluminescence (PL) spectroscopy at different excitation powers was applied to study nanoscale properties of carrier localization and recombination in semipolar (202¯1) InGaN quantum wells (QWs) emitting in violet, blue, and green-yellow spectral regions. With increased excitation power, an untypical PL peak energy shift to lower energies was observed. The shift was attributed to carrier density dependent carrier redistribution between nm-scale sites of different potentials. Near-field PL scans showed that in (202¯1) QWs the in-plane carrier diffusion is modest, and the recombination properties are uniform, which is advantageous for photonic applications.
Citation:
Marcinkevičius S, Gelžinytė K, Zhao Y, Nakamura S, DenBaars SP, et al. (2014) Carrier redistribution between different potential sites in semipolar (202¯1) InGaN quantum wells studied by near-field photoluminescence. Applied Physics Letters 105: 111108. Available: http://dx.doi.org/10.1063/1.4896034.
Publisher:
AIP Publishing
Journal:
Applied Physics Letters
Issue Date:
15-Sep-2014
DOI:
10.1063/1.4896034
Type:
Article
ISSN:
0003-6951; 1077-3118
Sponsors:
The research at KTH was performed within the frame of Linnaeus Excellence Center for Advanced Optics and Photonics (ADOPT) and was financially supported by the Swedish Energy Agency (Contract No. 36652-1) and the Swedish Research Council (Contract No. 621-2013-4096). The research at UCSB was supported by the Solid State Lighting and Energy Electronic Center (SSLEEC) and by the KACST-KAUST-UCSB Solid State Lighting Program (SSLP).
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DC FieldValue Language
dc.contributor.authorMarcinkevičius, S.en
dc.contributor.authorGelžinytė, K.en
dc.contributor.authorZhao, Y.en
dc.contributor.authorNakamura, S.en
dc.contributor.authorDenBaars, S. P.en
dc.contributor.authorSpeck, J. S.en
dc.date.accessioned2016-02-25T12:55:48Zen
dc.date.available2016-02-25T12:55:48Zen
dc.date.issued2014-09-15en
dc.identifier.citationMarcinkevičius S, Gelžinytė K, Zhao Y, Nakamura S, DenBaars SP, et al. (2014) Carrier redistribution between different potential sites in semipolar (202¯1) InGaN quantum wells studied by near-field photoluminescence. Applied Physics Letters 105: 111108. Available: http://dx.doi.org/10.1063/1.4896034.en
dc.identifier.issn0003-6951en
dc.identifier.issn1077-3118en
dc.identifier.doi10.1063/1.4896034en
dc.identifier.urihttp://hdl.handle.net/10754/597736en
dc.description.abstract© 2014 AIP Publishing LLC. Scanning near-field photoluminescence (PL) spectroscopy at different excitation powers was applied to study nanoscale properties of carrier localization and recombination in semipolar (202¯1) InGaN quantum wells (QWs) emitting in violet, blue, and green-yellow spectral regions. With increased excitation power, an untypical PL peak energy shift to lower energies was observed. The shift was attributed to carrier density dependent carrier redistribution between nm-scale sites of different potentials. Near-field PL scans showed that in (202¯1) QWs the in-plane carrier diffusion is modest, and the recombination properties are uniform, which is advantageous for photonic applications.en
dc.description.sponsorshipThe research at KTH was performed within the frame of Linnaeus Excellence Center for Advanced Optics and Photonics (ADOPT) and was financially supported by the Swedish Energy Agency (Contract No. 36652-1) and the Swedish Research Council (Contract No. 621-2013-4096). The research at UCSB was supported by the Solid State Lighting and Energy Electronic Center (SSLEEC) and by the KACST-KAUST-UCSB Solid State Lighting Program (SSLP).en
dc.publisherAIP Publishingen
dc.titleCarrier redistribution between different potential sites in semipolar (202¯1) InGaN quantum wells studied by near-field photoluminescenceen
dc.typeArticleen
dc.identifier.journalApplied Physics Lettersen
dc.contributor.institutionDepartment of Materials and Nano Physics, KTH Royal Institute of Technology, Electrum 229, 16440 Kista, Swedenen
dc.contributor.institutionInstitute of Applied Research, Vilnius University, Saulėtekio 9-3, 10222 Vilnius, Lithuaniaen
dc.contributor.institutionMaterials Department, University of California, Santa Barbara, California 93106, USAen
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