Bright infrared quantum-dot light-emitting diodes through inter-dot spacing control

Handle URI:
http://hdl.handle.net/10754/597697
Title:
Bright infrared quantum-dot light-emitting diodes through inter-dot spacing control
Authors:
Sun, Liangfeng; Choi, Joshua J.; Stachnik, David; Bartnik, Adam C.; Hyun, Byung-Ryool; Malliaras, George G.; Hanrath, Tobias; Wise, Frank W.
Abstract:
Infrared light-emitting diodes are currently fabricated from direct-gap semiconductors using epitaxy, which makes them expensive and difficult to integrate with other materials. Light-emitting diodes based on colloidal semiconductor quantum dots, on the other hand, can be solution-processed at low cost, and can be directly integrated with silicon. However, so far, exciton dissociation and recombination have not been well controlled in these devices, and this has limited their performance. Here, by tuning the distance between adjacent PbS quantum dots, we fabricate thin-film quantum-dot light-emitting diodes that operate at infrared wavelengths with radiances (6.4 W sr '1 m '2) eight times higher and external quantum efficiencies (2.0%) two times higher than the highest values previously reported. The distance between adjacent dots is tuned over a range of 1.3 nm by varying the lengths of the linker molecules from three to eight CH 2 groups, which allows us to achieve the optimum balance between charge injection and radiative exciton recombination. The electroluminescent powers of the best devices are comparable to those produced by commercial InGaAsP light-emitting diodes. By varying the size of the quantum dots, we can tune the emission wavelengths between 800 and 1,850 nm.© 2012 Macmillan Publishers Limited.
Citation:
Sun L, Choi JJ, Stachnik D, Bartnik AC, Hyun B-R, et al. (2012) Bright infrared quantum-dot light-emitting diodes through inter-dot spacing control. Nature Nanotechnology 7: 369–373. Available: http://dx.doi.org/10.1038/NNANO.2012.63.
Publisher:
Springer Nature
Journal:
Nature Nanotechnology
KAUST Grant Number:
KUS-C1-018-02
Issue Date:
6-May-2012
DOI:
10.1038/NNANO.2012.63
PubMed ID:
22562037
Type:
Article
ISSN:
1748-3387; 1748-3395
Sponsors:
This material is based on work supported by the National Science Foundation (NSF, grant no. EEC-0646547) and by the New York State Foundation for Science, Technology and Innovation (NYSTAR). J.J.C. and D. S. acknowledge support from the Cornell Center for Materials Research with funding from IGERT: a Graduate Traineeship in Nanoscale Control of Surfaces and Interfaces (DGE-0654193) of the NSF. This publication is based on work supported in part by an award (no. KUS-C1-018-02) made by King Abdullah University of Science and Technology (KAUST). GISAXS measurements were conducted at Cornell High Energy Synchrotron Source (CHESS) and the authors thank D.-M. Smilgies for calibration of the beam line set-up.
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Full metadata record

DC FieldValue Language
dc.contributor.authorSun, Liangfengen
dc.contributor.authorChoi, Joshua J.en
dc.contributor.authorStachnik, Daviden
dc.contributor.authorBartnik, Adam C.en
dc.contributor.authorHyun, Byung-Ryoolen
dc.contributor.authorMalliaras, George G.en
dc.contributor.authorHanrath, Tobiasen
dc.contributor.authorWise, Frank W.en
dc.date.accessioned2016-02-25T12:44:37Zen
dc.date.available2016-02-25T12:44:37Zen
dc.date.issued2012-05-06en
dc.identifier.citationSun L, Choi JJ, Stachnik D, Bartnik AC, Hyun B-R, et al. (2012) Bright infrared quantum-dot light-emitting diodes through inter-dot spacing control. Nature Nanotechnology 7: 369–373. Available: http://dx.doi.org/10.1038/NNANO.2012.63.en
dc.identifier.issn1748-3387en
dc.identifier.issn1748-3395en
dc.identifier.pmid22562037en
dc.identifier.doi10.1038/NNANO.2012.63en
dc.identifier.urihttp://hdl.handle.net/10754/597697en
dc.description.abstractInfrared light-emitting diodes are currently fabricated from direct-gap semiconductors using epitaxy, which makes them expensive and difficult to integrate with other materials. Light-emitting diodes based on colloidal semiconductor quantum dots, on the other hand, can be solution-processed at low cost, and can be directly integrated with silicon. However, so far, exciton dissociation and recombination have not been well controlled in these devices, and this has limited their performance. Here, by tuning the distance between adjacent PbS quantum dots, we fabricate thin-film quantum-dot light-emitting diodes that operate at infrared wavelengths with radiances (6.4 W sr '1 m '2) eight times higher and external quantum efficiencies (2.0%) two times higher than the highest values previously reported. The distance between adjacent dots is tuned over a range of 1.3 nm by varying the lengths of the linker molecules from three to eight CH 2 groups, which allows us to achieve the optimum balance between charge injection and radiative exciton recombination. The electroluminescent powers of the best devices are comparable to those produced by commercial InGaAsP light-emitting diodes. By varying the size of the quantum dots, we can tune the emission wavelengths between 800 and 1,850 nm.© 2012 Macmillan Publishers Limited.en
dc.description.sponsorshipThis material is based on work supported by the National Science Foundation (NSF, grant no. EEC-0646547) and by the New York State Foundation for Science, Technology and Innovation (NYSTAR). J.J.C. and D. S. acknowledge support from the Cornell Center for Materials Research with funding from IGERT: a Graduate Traineeship in Nanoscale Control of Surfaces and Interfaces (DGE-0654193) of the NSF. This publication is based on work supported in part by an award (no. KUS-C1-018-02) made by King Abdullah University of Science and Technology (KAUST). GISAXS measurements were conducted at Cornell High Energy Synchrotron Source (CHESS) and the authors thank D.-M. Smilgies for calibration of the beam line set-up.en
dc.publisherSpringer Natureen
dc.titleBright infrared quantum-dot light-emitting diodes through inter-dot spacing controlen
dc.typeArticleen
dc.identifier.journalNature Nanotechnologyen
dc.contributor.institutionCornell University, Ithaca, United Statesen
kaust.grant.numberKUS-C1-018-02en

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