Barrier height of Pt–In[sub x]Ga[sub 1−x]N (0≤x≤0.5) nanowire Schottky diodes

Handle URI:
http://hdl.handle.net/10754/597644
Title:
Barrier height of Pt–In[sub x]Ga[sub 1−x]N (0≤x≤0.5) nanowire Schottky diodes
Authors:
Guo, Wei; Banerjee, Animesh; Zhang, Meng; Bhattacharya, Pallab
Abstract:
The barrier height of Schottky diodes made on Inx Ga 1-x N nanowires have been determined from capacitance-voltage measurements. The nanowires were grown undoped on n-type (001) silicon substrates by plasma-assisted molecular beam epitaxy. The length, diameter and density of the nanowires are ∼1 μm, 20 nm, and 1× 1011 cm-2. The Schottky contact was made on the top surface of the nanowires with Pt after planarizing with parylene. The measured barrier height B varies from 1.4 eV (GaN) to 0.44 eV (In0.5 Ga0.5 N) and agrees well with the ideal barrier heights in the Schottky limit. © 2011 American Institute of Physics.
Citation:
Guo W, Banerjee A, Zhang M, Bhattacharya P (2011) Barrier height of Pt–In[sub x]Ga[sub 1−x]N (0≤x≤0.5) nanowire Schottky diodes. Applied Physics Letters 98: 183116. Available: http://dx.doi.org/10.1063/1.3579143.
Publisher:
AIP Publishing
Journal:
Applied Physics Letters
KAUST Grant Number:
N012509-00
Issue Date:
2011
DOI:
10.1063/1.3579143
Type:
Article
ISSN:
0003-6951
Sponsors:
The work was supported by KAUST under Grant No. N012509-00.
Appears in Collections:
Publications Acknowledging KAUST Support

Full metadata record

DC FieldValue Language
dc.contributor.authorGuo, Weien
dc.contributor.authorBanerjee, Animeshen
dc.contributor.authorZhang, Mengen
dc.contributor.authorBhattacharya, Pallaben
dc.date.accessioned2016-02-25T12:43:37Zen
dc.date.available2016-02-25T12:43:37Zen
dc.date.issued2011en
dc.identifier.citationGuo W, Banerjee A, Zhang M, Bhattacharya P (2011) Barrier height of Pt–In[sub x]Ga[sub 1−x]N (0≤x≤0.5) nanowire Schottky diodes. Applied Physics Letters 98: 183116. Available: http://dx.doi.org/10.1063/1.3579143.en
dc.identifier.issn0003-6951en
dc.identifier.doi10.1063/1.3579143en
dc.identifier.urihttp://hdl.handle.net/10754/597644en
dc.description.abstractThe barrier height of Schottky diodes made on Inx Ga 1-x N nanowires have been determined from capacitance-voltage measurements. The nanowires were grown undoped on n-type (001) silicon substrates by plasma-assisted molecular beam epitaxy. The length, diameter and density of the nanowires are ∼1 μm, 20 nm, and 1× 1011 cm-2. The Schottky contact was made on the top surface of the nanowires with Pt after planarizing with parylene. The measured barrier height B varies from 1.4 eV (GaN) to 0.44 eV (In0.5 Ga0.5 N) and agrees well with the ideal barrier heights in the Schottky limit. © 2011 American Institute of Physics.en
dc.description.sponsorshipThe work was supported by KAUST under Grant No. N012509-00.en
dc.publisherAIP Publishingen
dc.titleBarrier height of Pt–In[sub x]Ga[sub 1−x]N (0≤x≤0.5) nanowire Schottky diodesen
dc.typeArticleen
dc.identifier.journalApplied Physics Lettersen
dc.contributor.institutionUniversity Michigan Ann Arbor, Ann Arbor, United Statesen
kaust.grant.numberN012509-00en
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